A5005600455- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Advancements in Photolithography Techniques
- Electronic Packaging and Soldering Technologies
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Thin-Film Transistor Technologies
- Copper-based nanomaterials and applications
- CCD and CMOS Imaging Sensors
- 3D IC and TSV technologies
- Plasma Diagnostics and Applications
- Engineering Applied Research
- Neural Networks and Reservoir Computing
- ZnO doping and properties
- Copper Interconnects and Reliability
Korea University
2024
Dongbu HiTek (South Korea)
2008
Yeungnam University
2006
Oregon State University
2006
Virginia Tech
2002
Abstract Capacitorless two‐transistor (2T0C) dynamic random‐access memory (DRAM) cells comprising oxide thin‐film transistors (TFTs) show potential as low‐power and high‐density DRAM cells; however, the multiply–accumulate (MAC) operation using these is not yet realized. In this study, 2T0C amorphous indium–tin–gallium–zinc TFTs are fabricated for MAC operations. a cell, one transistor acts write other read transistor, whose gate capacitance corresponds to data storage capacitance. The have...
Abstract In this study, we demonstrate binary and ternary logic-in-memory (LIM) operations of inverters NAND NOR gates comprising nanosheet (NS) feedback field-effect transistors (FBFETs) with a triple-gated structure. The NS FBFETs are reconfigured in p- or n-channel modes depending on the polarity gate bias voltage exhibit steep switching characteristics an extremely low subthreshold swing 1.08 mV dec –1 high ON/OFF current ratio approximately 10 7 . Logic circuits consisting perform logic...
A novel approach to deposit transparent thin films is reported. This uses a continuous-flow microreactor generate flux of nanoparticles which then impinge on heated substrate. The as-deposited film consists highly nanocrystalline with dilated optical bandgap . Functional metal-insulator-semiconductor field-effect-transistors (MISFETs) were successfully fabricated using this technique after post-air-annealing process. MISFET an effective mobility and current on-to-off ratio was produced....
Abstract In this study, a triple‐gated transistor with p + ‐i‐n silicon nanosheet (NS) is proposed as single synaptic device, and bidirectional functions are realized using reconfigurable memory characteristics. The NS features steep switching bistable characteristics subthreshold swing below 5 mV dec −1 an ON/OFF current ratio of ≈5 × 10 6 for both the n‐ p‐channel modes. This exhibits electrically symmetric ON 1.02 Moreover, weight updates binarized spike‐timing‐dependent plasticity...
In this study, we investigate the gate-bias stability of triple-gated feedback field-effect transistors (FBFETs) with Si nanosheet channels. The subthreshold swing (SS) FBFETs increases from 0.3 mV dec
Ferroelectric switching emission, dielectric and pyroelectric emission were studied by patterning images on electron resist for lithography applications. It was observed that the is most acceptable a high throughput 1:1 projection application. A demonstrated with line widths of 30 /spl mu/m utilizing emission. degradation property material during repeated heating cycles below phase transition temperature ferroelectric material. Annealing excursions above prevented emitter.