Lei Yue

ORCID: 0009-0004-4671-0398
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Research Areas
  • Ferroelectric and Negative Capacitance Devices
  • Magnetic properties of thin films
  • Advanced Memory and Neural Computing
  • Quantum and electron transport phenomena
  • ZnO doping and properties
  • Neuroinflammation and Neurodegeneration Mechanisms
  • Theoretical and Computational Physics
  • Physics of Superconductivity and Magnetism
  • Crystal Structures and Properties
  • Surface and Thin Film Phenomena
  • Cryptography and Data Security
  • High-Voltage Power Transmission Systems
  • Advancements in Semiconductor Devices and Circuit Design
  • Multiferroics and related materials
  • Acute Ischemic Stroke Management
  • Cloud Data Security Solutions
  • Neurological Disease Mechanisms and Treatments
  • HVDC Systems and Fault Protection
  • Smart Grid and Power Systems
  • Magnetic Properties and Applications
  • 2D Materials and Applications
  • Blockchain Technology Applications and Security
  • Advanced Condensed Matter Physics
  • MXene and MAX Phase Materials

Shangrao Normal University
2025

Xi’an University of Posts and Telecommunications
2024

Suzhou Research Institute
2022-2023

Jilin University
2023

Beihang University
2016

Ischemic stroke (IS) represents a significant contributor to morbidity and mortality globally. The relationship between IS mitochondrial unfolded protein response (UPRmt) was presently uncertain. This study endeavors explore the fundamental mechanism of UPRmt in by utilizing bioinformatics methods. In GSE58294, differentially expressed genes (DEGs) were obtained, which overlapped with key module -related gene ( -RGs) for producing candidate genes. biomarkers identified from through machine...

10.3389/fcell.2025.1582252 article EN cc-by Frontiers in Cell and Developmental Biology 2025-04-17

10.1016/j.jisa.2025.104094 article EN Journal of Information Security and Applications 2025-05-29

We propose and demonstrate a reconfigurable logic gate based on single spin-orbit torque magnetic tunnel junction (SOT-MTJ) device operated by unipolar voltage inputs. The SOT-MTJ used in the can be switched between high low resistance state when large small amplitude pulses inject to it. Based this switching characteristic, gates of XOR, XNOR NOT are designed realized different with same sign. Compared spin logics bipolar current signals as inputs, our implementation uses much less...

10.1109/led.2022.3186427 article EN IEEE Electron Device Letters 2022-06-27

As a member of the emerging MXenes family, Nb2CS2 offers distinctive superconductivity, excellent electrical properties, and outstanding chemical stability, making it potentially useful for energy storage, medical imaging, quantum computing. Herein, we systematically investigate how ultrahigh pressure affects properties Nb2CS2. The results indicate that retains robust superconductivity with Tc>8 K up to maximum applied 146.8 GPa. Moreover, upper critical magnetic field Hc2(0)...

10.1063/5.0160277 article EN Applied Physics Letters 2023-07-24

Abstract We investigate the voltage-controlled magnetism effect of HfZrO/CoFeB hybrid film and a Hall device with perpendicular magnetic anisotropy. The magnetization versus field experiments anomalous before after applying voltage are performed. results exhibit that coercive samples remain unchanged while saturation shows permanent increase (more than 60%), which is regardless direction applied voltage. Different from conventional anisotropy, in our work, only enhanced by without trading...

10.35848/1347-4065/ac5a29 article EN Japanese Journal of Applied Physics 2022-03-02

We construct the Hall-bar device with size of several hundred nanometers based on HZO/Co multiferroic heterojunction. A remarkable voltage-controlled magnetism is observed in that possesses both ferroelectric property and perpendicular magnetic anisotropy (PMA). The nucleation field coercivity can be modulated by voltage pulse while saturation keeps stable. non-volatile reversible ascribable to interfacial charges caused polarization. Meanwhile, effective energy density ( K u ) also...

10.1088/1674-1056/ac9a3b article EN Chinese Physics B 2022-10-14

The considerable power consumption on logic system will be an unavoidable bottleneck with the downscaling of technology node. Spintronic devices are considered as promising solution due to its low-power potential. Among them, all spin device (ASLD) has drawn exceptional interests it utilizes pure current instead charge current. However, relatively low efficiency injection and detection hinders development application, especially in aspect speed. In this paper, we apply voltage controlled...

10.1145/2950067.2950103 article EN 2016-07-18

In our study, we conduct magnetization and heat capacity measurements to investigate field-induced magnetic phase transitions within the newly synthesized compound K2Ni2(SeO3)3, a spin-1 dimer system arranged on triangular lattice. The Ni-Ni dimers exhibit ferromagnetic intra-dimer interaction, effectively behaving as an ensemble with total spin of S=2. contrast, antiferromagnetic interactions manifest between these trigonal distortion NiO6 octahedra introduces easy-axis anisotropy,...

10.48550/arxiv.2309.10335 preprint EN other-oa arXiv (Cornell University) 2023-01-01
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