A5104258996- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thermal properties of materials
- GaN-based semiconductor devices and materials
- Magnetic properties of thin films
- Theoretical and Computational Physics
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Ammonia Synthesis and Nitrogen Reduction
- Advanced Battery Materials and Technologies
- Fuel Cells and Related Materials
- Renal cell carcinoma treatment
- Radio Frequency Integrated Circuit Design
- Advanced Battery Technologies Research
- Advanced Sensor and Energy Harvesting Materials
- Additive Manufacturing and 3D Printing Technologies
- Urinary and Genital Oncology Studies
- Advancements in Battery Materials
- Ga2O3 and related materials
- Microstructure and mechanical properties
- Renal and related cancers
- Magneto-Optical Properties and Applications
- Surface and Thin Film Phenomena
- Electrocatalysts for Energy Conversion
Henan Polytechnic University
2024-2025
Centre National de la Recherche Scientifique
2024
Institut Polytechnique de Bordeaux
2023-2024
Université de Bordeaux
2023-2024
Beijing University of Chemical Technology
2024
Northeastern University
2024
Dalian Medical University
2024
Second Affiliated Hospital of Dalian Medical University
2024
Laboratoire de l'Intégration du Matériau au Système
2023
Virginia Tech
2023
Exploring efficacious low-Ir electrocatalysts for oxygen evolution reaction (OER) is crucial large-scale application of proton exchange membrane water electrolysis (PEMWE). Herein, an efficient non-precious lanthanide-metal-doped IrO
Chip size ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${A}_{\text {chip}}$ </tex-math></inline-formula> ) optimization is key to the accurate analysis of device and material costs design multichip modules. It particularly critical for wide bandgap (WBG) ultrawide (UWBG) power devices due high cost. Moreover, designs drift region thickness notation="LaTeX">${W}_{\text {dr}}$ doping concentration...
Abstract As a new type of microwave signal generator, spin-torque nano-oscillators (STNOs) based on skyrmions have potential application value. In recent years, hybrid with arbitrary helicity been proposed in chiral materials. this paper, we investigated the dynamics self-sustained oscillation magnetic nanodisks synthetic antiferromagnetic (SAF) multilayer structure, which can effectively eliminate Hall effect and ensure their stable circular motion. We found that smaller skyrmions, radius...
GaN-on-GaN vertical diode is a promising device for next-generation power electronics. Its breakdown voltage (BV) limited by edge termination designs such as guard rings. The design space of rings huge and it difficult to optimize manually. In this paper, we propose an effective inverse strategy co-optimize BV (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</inf> Q) <sup xmlns:xlink="http://www.w3.org/1999/xlink">−1</sup> , where BV, V Q...
This work presents new insights into 3D logic circuit design with vertical junctionless nanowire FETs (VNWFET) accounting for underlying electrothermal phenomena. Aided by the understanding of nanoscale heat-transport in VNWFETs through multiphysics simulations, SPICE-compatible compact model captures temperature and trapping effects principally a shift device threshold voltage. Circuit level simulations indicate strong impact variation on functionality figures merits such as energy-delay...
Skyrmion bags are spin textures with any integer topological degree, which can be driven by spin-polarized currents and generate multiple skyrmions when passing through racetracks special geometries. We have proposed three nanotrack configurations different narrow channels on synthetic antiferromagnetic investigated the dynamic process of current-induced conversion skyrmion into skyrmions. found that enter channels, they converted magnetic domains, while driving force from spin-transfer...
Devolvement of high-performance logic application in sub-20 nm technology node has gained significant attention due to their improved electrostatic and thermal control. In this work, we investigate electro-thermal transport vertical junctionless nanowire transistors (VNWFET) at cryogenic temperatures understand effects nanoscale regime. It highlights that heat dissipation stability are more efficient compared planar Finfet configuration.
Abstract Magnetic skyrmions are nanoscale spin textures with topological protection properties, which regarded as promising information carriers. When move along nanotracks, their trajectories will shift if affected by skyrmion Hall effect and pinning effect. In this work, the influence of trapezoidal notches in synthetic antiferromagnetic nanotracks on dynamics is investigated through micromagnetic simulation. The results exhibit that asymmetric energy barrier induced geometric structure...
This work presents a comprehensive analysis of electrothermal effects in emerging 3D vertical junctionless nanowire transistors (VNWFETs) using on-wafer measurements under wide range temperature and validated against numerical compact model simulations. Experimental observations indicate an increase the drain current with temperature, conforming to behavior FETs. Multiphysics simulations reveal formation hot-spots that adversely affect thermal conductivity smaller geometries. The VNWFET was...
Edge termination plays a crucial role in achieving near-ideal avalanche breakdown power semiconductor devices. In this paper, two edge designs, one GR (guard ring) [1], the other USAB-JTE (ultra-small-angle bevel junction extension) [2] that utilize planar ion implantation are developed and studied. The fabrication process only has single step does not need precise control over depth. Isolation is also done by same process, avoiding of etching possible etch-induced damages to Comprehensive...