A5100781611- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Fiber Laser Technologies
- Metal and Thin Film Mechanics
- Theoretical and Computational Physics
- Photonic Crystal and Fiber Optics
- Photocathodes and Microchannel Plates
- Semiconductor materials and devices
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Laser-Matter Interactions and Applications
- Semiconductor Quantum Structures and Devices
- Ammonia Synthesis and Nitrogen Reduction
- Thin-Film Transistor Technologies
- Advanced Fiber Optic Sensors
- Catalytic Processes in Materials Science
- Advanced Photocatalysis Techniques
- Stochastic processes and statistical mechanics
- Magnetic properties of thin films
- Surface and Thin Film Phenomena
- Probiotics and Fermented Foods
- Spectroscopy Techniques in Biomedical and Chemical Research
- Spectroscopy and Chemometric Analyses
- Complex Network Analysis Techniques
Wuhan University
2021-2024
Shenyang University of Chemical Technology
2023
Shandong University of Technology
2023
Ludong University
2022
Hebei Science and Technology Department
2022
Heilongjiang University
2019
Chongqing University of Arts and Sciences
2012
Chongqing University
2007
High-efficiency GaN-based green LEDs are of paramount importance to the development monolithic integration multicolor emitters and full-color high-resolution displays. Here, InGaN quantum well with gradually varying indium (In) content was proposed for improving performance LEDs. The In not only alleviates quantum-confined Stark effect (QCSE), but also yields a low Auger recombination rate. Consequently, gradual exhibited increased light output power (LOP) reduced efficiency droop as...
Abstract Great progress made by heteroepitaxial growth technology encourages rapid development of III‐nitride structures and their applications in extensive fields. Particularly, innate bandgap tunability materials renders them attractive for white light‐emitting diodes (WLEDs) that are considered as next‐generation solid‐state lighting sources. However, commercial phosphor‐converted WLEDs suffer from poor color rendering index (CRI) intense blue component, hard to fulfill demanding...
High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are desirable for future high-resolution displays and lighting products. Here, we demonstrate efficient (∼570 nm) LEDs optimized three-layer staggered quantum wells (QWs) that grown on patterned sapphire substrates. Numerical simulations show the electron–hole wavefunction overlap of InGaN QWs In content exhibits a 1.7-fold improvement over square QWs. At same injection current, exhibit lower forward...
Over the last decades, continuous technological advancements have been made in III‐nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement of traditional light sources. With emission wavelength covering entire visible spectrum, InGaN LEDs find various applications such solid‐state lightings, full‐color displays, and communication. However, quantum efficiency suffers from dramatic decline extends blue to green–red region. This issue restrains lighting...
Throughout the development of III-nitride electronic and optoelectronic devices, electrically interfacing semiconductors metal schemes has been a long-standing issue that determines contact resistance operation voltage, which are tightly associated with device performance stability. Compared to main research focus crystal quality semiconductors, equally important interface between III-nitrides received relatively less attention. Here, we demonstrate comprehensive engineering strategy realize...
Abstract As a new type of microwave signal generator, spin-torque nano-oscillators (STNOs) based on skyrmions have potential application value. In recent years, hybrid with arbitrary helicity been proposed in chiral materials. this paper, we investigated the dynamics self-sustained oscillation magnetic nanodisks synthetic antiferromagnetic (SAF) multilayer structure, which can effectively eliminate Hall effect and ensure their stable circular motion. We found that smaller skyrmions, radius...
High-efficiency GaN-based visible flip-chip miniaturized-light emitting diodes (FC mini-LEDs) are desirable for developing white LED-backlit liquid crystal displays. Here, we propose a full-angle Ti 3 O 5 /SiO 2 distributed Bragg reflector (DBR) blue and green FC mini-LEDs to enhance the device performance. The proposed DBR is composed of different single-DBR stacks optimized central wavelength in blue, green, red light regions, resulting wider reflective bandwidth less angular dependence....
Realization of efficient InGaN-based green light-emitting diodes (LEDs) is highly desirable in solid-state lighting industry. Here, we propose a stacked last quantum barrier (SLQB) GaN/AlN layer for ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mo>∼</mml:mo> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>550</mml:mn> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mi mathvariant="normal">n</mml:mi> mathvariant="normal">m</mml:mi> </mml:math> ) LEDs grown...
InGaN-based long-wavelength light-emitting diodes (LEDs) are indispensable components for the next-generation solid-state lighting industry. In this work, we introduce additional InGaN/GaN pre-wells in LED structure and investigate influence on optoelectronic properties of yellow (~575 nm) LEDs. It is found that with exhibits a smaller blue shift, 2.2-fold increase light output power stronger photoluminescence (PL) intensity compared to without pre-wells. The underlying mechanism revealed by...
The distributed Bragg reflector (DBR) has been widely used in flip-chip micro light-emitting diodes (micro-LEDs) because of its high reflectivity. However, the conventional double-stack DBR a strong angular dependence and narrow reflective bandwidth. Here, we propose wide reflected angle Ti3O5/SiO2 (WRA-DBR) for AlGaInP-based red GaN-based green/blue micro-LEDs (RGB micro-LEDs) to overcome drawbacks DBR. WRA-DBR consisting six sub-DBRs reflectivity within visible light wavelength region at...
Although great progress has been made in InGaN/AlGaN ultraviolet light-emitting diodes (UV LEDs), their quantum efficiency is still suffering from severe electron leakage and poor hole injection. Here, we propose AlInGaN/AlGaN superlattice blocking layer (SEBL) to enhance the confinement injection of UV LEDs emitting at 371 nm. Experimental result shows that LED with SEBL achieves a 21% enhancement light output power (LOP) 60 mA slight reduction forward voltage compressive stress, compared...
The beneficial effects of the probiotic strain Lactiplantibacillus plantarum (formerly Lactobacillus plantarum) are based on its adherence and colonization ability in gut. However, little is known about migration long-term gut strain. This study evaluated modes RS-09 to identify with potential. We established CFDA/SE-labeled temporal spatial distribution intestine as well analyze persistence different parts by flow cytometry. has shown that maintains strong adhesion abilities under acid (pH...
Pursuing efficient long-wavelength InGaN LED has been a troublesome issue to be solved, which forms interesting subjects for fundamental research, but finds also motivation in extensive applications. Here, we investigate the effect of TMIn (trimethylindium) flux variation growing bandgap-engineered staggered quantum wells (QWs) on corresponding properties and demonstrate unexpectedly simultaneous increase light output power (LOP) emission wavelength. At 20 mA, LEDs based QWs grown under low...
Abstract Magnetic skyrmions are nanoscale spin textures with topological protection properties, which regarded as promising information carriers. When move along nanotracks, their trajectories will shift if affected by skyrmion Hall effect and pinning effect. In this work, the influence of trapezoidal notches in synthetic antiferromagnetic nanotracks on dynamics is investigated through micromagnetic simulation. The results exhibit that asymmetric energy barrier induced geometric structure...
Comprehensive Summary The worldwide abuse of antibiotics and resultant antimicrobial resistance made the development new antibacterial materials an urgent significant issue. Herein, a hybrid ZnO@Au nanorod array with fast bacterial inactivation excellent recyclability was reported. 93% bacteria could be inactivated within 5 min ultra‐sonication under indoor daylight, killing rate maintains above 90% after seven repeated using cycles. Antibacterial mechanism involves extracellular reactive...
Miniaturized light-emitting diodes (mini-LEDs) have gained much attention for liquid crystal displays back-light and self-emissive displays. However, the unsatisfactory performance of InGaN long-wavelength mini-LEDs hinders their practical applications. Herein, we develop a full-angle distributed Bragg reflector (DBR) investigate its impact on yellow flip-chip mini-LEDs. The DBR consists different stacks Ti3O5/SiO2 layers that are optimized multiple central wavelengths. Compared to...