Perovskite solar cells have received great attention because of their rapid progress in efficiency, with a present certified highest efficiency 23.3%. Achieving both high and thermal stability is one the biggest challenges currently limiting perovskite devices displaying at temperature frequently suffer from marked decrease efficiency. In this report, relationship between composition device examined. It revealed that Rb can suppress growth PbI2 even under -rich conditions decreasing Br ratio...

Our group studied the effects of conduction band offset window/Cu(In,Ga)Se2 (CIGS) layers on CIGS-based solar cell performance. To control offset, we considered use a window layer Zn1−xMgxO thin film with controllable gap as an alternative to conventional using CdS film. From measurement valence between Zn1−xMgxO/CIGS and each layer, confirmed that could be controlled by changing Mg content The cells prepared for this study consisted ITO/Zn1−xMgxO/CIGS/Mo/soda-lime glass structure. When...

The thermal stability of methylammonium lead iodide (MAPbI3)-based flexible perovskite solar cell (PSC) modules was studied. For this purpose, PSC modules, consisting 10 serially connected cells with an aperture area 9 cm2, were heated at 85 °C, 95 and 105 °C for 4000 h. parameters periodically measured by interrupting the tests. Evolution series resistance, short circuit current, fill factor showed monotonic reduction, whereas shunt resistance open voltage depicted three stage degradation:...

The chemical composition of Cu(In, Ga)Se 2 (CIGS) thin film was monitored in real time during the physical vapor deposition. temperature growing CIGS found to depend on ratio Cu/(In+Ga) when deposited under constant heating power. monitoring system can be easily applied a 3-stage deposition process films. solar cells (active area: 1 cm ) fabricated by using obtained absorber layer showed an efficiency 15.4% standard AM 1.5 illumination.

MoSe 2 layers formed at the interface between Cu-In-Ga-Se and Mo were studied by X-ray diffraction high resolution transmission electron microscopy. Various composition films such as Se, Cu-Se, In-Ga-Se Cu-rich deposited on coated glass substrates physical vapor deposition. For case of Se/Mo interface, a layer about 100 Å thickness was observed. The c -axis grains found to be oriented normal surface layer. Cu-Se/Mo Cu-In-Ga-Se/Mo structures, thin. In-Ga-Se/Mo structure, 0.1 µm thick...

Polycrystalline Cu(In1−xGax)3Se5 thin films were prepared by four source evaporation with controlling and shielding of the molecular beams from elemental sources. Ga content x, can be controlled deposition times CuIn3Se5 CuGa3Se5 layers, which form through interdiffusion. X-ray diffraction analyses showed that x≲0.5 have an ordered vacancy chalcopyrite x≳0.5 a zinc blende structure. The optical band gap linearly increased 1.23 eV (x=0) to 1.85 (x=1) increasing content. conductivity was about...

We have been working on the fabrication of practical perovskite solar modules using an existing thin-film module patterning technology. Patterning processes were applied laser scribing and mechanical a glass/F-doped SnO2 (FTO)/compact TiO2 (c-TiO2)/meso-TiO2/CH3NH3PbI3/2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene/Au structure. However, remained in FTO–Au junction at cell connection part: this appeared to create series resistance that degraded performance module. UV...

Interfaces between the Cu(In,Ga)Se 2 (CIGS) absorber and Mo back contact in CIGS solar cells were investigated by secondary ion mass spectroscopy (SIMS) analytical transmission electron microscopy (TEM). The cell with MgF /ITO/ZnO/CdS/CIGS/Mo/glass structure exhibited an efficiency of over 15%. In SIMS depth profile, Se intensity had a peak at CIGS/Mo interface. Cross-sectional TEM observation showed that there two layers One was MoSe layer other amorphous layer. thickness interface depends...

The surfaces of Cu-rich and stoichiometric (slightly [In, Ga]-rich) Cu(In, Ga)Se 2 (CIGS) thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) transmission (TEM). At the surface CIGS films, Cu 2- x Se Ga) 3 5 exist, respectively. treated using KCN NH aqueous solutions. In film, treatment in solution completely eliminated impurity removed only at front surface. from recombination carriers occurs more heterojunction CdS/NH -treated system...

Organic–inorganic halide perovskites (OIHPs) have been intensively studied in recent years for use solar cells. Many studies reported the light-induced phenomena of OIHP materials and their In this study, we investigated influence a hole-transport layer (HTL) on degradation (LID) mixed cells, especially at OIHP/HTL interface, by hard X-ray photoelectron spectroscopy (HAXPES) impedance spectroscopy. HAXPES shows accumulation iodine metallic lead vicinity electron-transport layer/OIHP...

In this paper, we propose an integrated optical isolator and circulator using nonreciprocal phase shifters combined with Y-branch couplers or hybrid couplers. They are not used in mode coupling between orthogonally polarized waves, which leads to reduce the fabrication tolerance. We present a design example guide structure of YIG film GGG substrate.

Drastic changes in average molecularities (m=Cu/In) from m≫1 to m=0.92–0.93 and hole concentrations p≫1019 cm−3 as low p=7.5×1016 have been observed molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high Cu-excess compositions as-grown films were attributed phase. On other hand, well-defined photoluminescence emissions found characteristic intrinsic CuInSe2. The presence made possible growth high-quality epitaxial at temperature well...

Polycrystalline CuIn 3 Se 5 films were successfully prepared by three-source coevaporation with controlling and shielding of the molecular beams from elemental sources. The film exhibited good chemical homogeneity an ordered vacancy chalcopyrite-type structure lattice constants a =5.742 Å c =11.486 Å. High-resolution transmission electron microscopy showed that had columnar microstructure each grain contained high density twins in {112} planes. band-gap energy was determined to be 1.23 eV...