A5056868659- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Semiconductor materials and interfaces
- Electron and X-Ray Spectroscopy Techniques
- Silicon Nanostructures and Photoluminescence
- 3D IC and TSV technologies
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Ferroelectric and Negative Capacitance Devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Ion-surface interactions and analysis
- Electronic Packaging and Soldering Technologies
- Transition Metal Oxide Nanomaterials
- Molecular Junctions and Nanostructures
- Anodic Oxide Films and Nanostructures
- Diamond and Carbon-based Materials Research
- Advanced ceramic materials synthesis
- CCD and CMOS Imaging Sensors
- Advanced Electron Microscopy Techniques and Applications
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
2011-2022
CEA LETI
2011-2022
Université Grenoble Alpes
2011-2022
CEA Grenoble
2010-2019
Institut polytechnique de Grenoble
2009-2018
STMicroelectronics (France)
2004-2018
European Automobile Manufacturers Association
2005-2014
Micro and Nanotechnology Innovation Centre
2007
Direction de la Recherche Technologique
2004-2006
Foundation for Research and Technology Hellas
2004
Structural, chemical and electronic properties of electroforming in the TiN/HfO2 system are investigated at nanometre scale. Reversible resistive switching is achieved by biasing metal oxide using conductive atomic force microscopy. An original method implemented to localize investigate region combining focused ion beam, scanning spreading resistance microscopy transmission electron Results clearly show presence a filament extending over 20 nm. Its size shape mainly tuned corresponding HfO2...
For the first time, a full 3D CMOS over CoolCube™ integration is demonstrated with top level compatible state of art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain. Functional inverters either PMOS NMOS on are highlighted. Furthermore, Si layer transfer above 28nm W Metal 1 an industrial short loop return in front end environment presented, confirming compatibility integration.
We present the characteristics of uniformly doped silicon Esaki tunnel diodes grown by low temperature molecular beam epitaxy (T/sub growth/=275/spl deg/C) using in situ boron and phosphorus doping. The effects ex thermal annealing are presented for temperatures between 640 800/spl deg/C. A maximum peak to valley current ratio (PVCR) 1.47 was obtained at optimum 680/spl deg/C 1 min. Peak (excess) currents decreased more than two orders magnitude as times were increased with rates empirically...
We have fabricated hybrid channel Ω-gate CMOS nanowires (NWs) with strained SiGe-channel (cSiGe) p-FETs and Si-channel n-FETs. An optimized process flow based on the Ge enrichment technique results in a +135% hole mobility enhancement at long gate lengths compared to Si. Effectiveness of cSiGe is also evidenced for ultra-scaled p-FET NWs (gate length L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> =15 nm) +90% I...
Bulk silicon device technologies are reaching fundamental scaling limitations. The 28 nm and 22 technology nodes have seen the introduction of Ultra-Thin Body Buried Oxide Fully Depleted SOI (UTBB-FDSOI) devices FinFETs, respectively. transistor mandatory to suppress short channel effects. Today, all major research development alliances state that its potential address roadmap requirements down 10nm node. Innovations will be necessary for lower, more advanced node (under 10nm)....
We investigated origins of the resistivity change during forming NiO based resistive random access memories in a nondestructive way using hard x-ray photoelectron spectroscopy. Energy shifts and bandgap states observed after switching suggest that oxygen vacancies are created low state. As result conduction may occur via defects such as electrons traps metallic nickel impurities. Migration atoms seems to be driving mechanism. This provides concrete evidence major role played by decreasing...
The recent advances in the inelastic background analysis of XPS spectra recorded with hard X-rays (HAXPES) make this method a powerful, non-destructive solution to retrieve depth distribution deeply buried elements. In work, we apply technique study diffusion phenomena, upon annealing, power transistor devices. We present complete sample under different stages fabrication process. investigate accuracy determination elemental distributions and concentrations analysis. This is done by...
The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition matrix and a sacrificial organic phase (porogen), postcuring treatments may be used create porosity by evaporation porogen. In this paper, Auger electron spectroscopy is performed simultaneously modify material (e-beam cure) measure corresponding changes in structure chemical...
The interdiffusion and thermal stability of narrow Si/SiGe multi-quantum wells is investigated by photoluminescence intersubband spectroscopy. exhibits a blueshift as function the temperature annealing. activation energy intermixing process coefficient are deduced from shift versus anneal. absorption measured photoinduced infrared spectroscopy on interdiffused samples for light polarized perpendicular (z polarization) or parallel (x to layer plane. In z polarization, annealed redshift...
The structural, electronic, and optical properties of single crystalline n-type 4H–SiC implanted with Ge atoms have been investigated through x-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), Raman spectroscopy, sheet resistivity measurements. are under the conditions a 300 keV ion beam energy dose 2×1016 cm−2. X-ray Ge-implanted sample showed broadening Bragg peaks. A shoulder on (0004) reflection indicated an increase in lattice constant corresponding to substitutional...
Silicon nitride spacer etching is one of the most critical step for fabrication CMOS transistors in microelectronics. It usually done by plasma using a fluorocarbon based chemistry. However, from 14 nm technology node and beyond, this process no longer allows etch specifications to be reached (nonformation foot, poor dimension control below 1 nm). To overcome issue, new was developed. consists two steps: first step, silicon film modified light ion implantation (hydrogen), then followed...
Angle-resolved X-ray Photoelectron Spectroscopy (ARXPS) was applied to the TiN/ZrO2/InGaAs stack assess its thermal stability. Through a robust ARXPS analysis, it possible observe subtle effects such as thermally induced diffusion of substrate atomic species (In and Ga) through dielectric layer. The detailed characterization film structure allowed for assessing depth profiles diffused by means scenarios-method. Since quantification amount material done at different temperatures, obtain an...
The effect of nanocrystal orientation on the energy loss spectra monoclinic hafnia (m-HfO2) is measured by high resolution transmission electron microscopy (HRTEM) and valence spectroscopy (VEELS) quality samples. For same momentum-transfer directions, dielectric properties are also calculated ab initio time-dependent density-functional theory (TDDFT). Experiments simulations evidence anisotropy in m-HfO2, most notably with direction-dependent oscillator strength main bulk plasmon....
We present the valence electron energy-loss spectrum and dielectric function of monoclinic hafnia ($\mathrm{m}\ensuremath{-}{\mathrm{HfO}}_{2}$) obtained from time-dependent density-functional theory (TDDFT) predictions compared to energy-filtered spectroscopic imaging measurements in a high-resolution transmission-electron microscope. Fermi's golden rule (DFT) calculations can capture qualitative features spectrum, but we find that TDDFT, which accounts for local-field effects, provides...
Thin TaN metallic barriers are used to prevent copper diffusion into porous low-k dielectrics such as a-SiOC:H for advanced interconnects. We investigate the detailed electronic properties of TaN/a-SiOC:H stack. Here we combine ultraviolet and x-ray photoelectron spectroscopy measure chemical composition whole band diagram An original interpretation based on image-force model internal photoemission is suggested explain electric field effect induced by negative bias a-SiOC:H. This extrapolate...
In this paper, for the first time, reliability of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based RRAM devices integrated in an advanced 28nm CMOS 16kbit demonstrator is presented. The effect introduction a thin Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer TiN/Ti/HfO /Al /TiN explored to improve memory performances. Thanks in-depth electrical characterization both and stacks at device level 16×1kbit interest...
In microelectronics, with the trend to decrease dimensions, interconnects suffer from RC delay increase. New materials as porous dielectrics are required, but their integration copper metallization raises lots of issues. One key problems comes tendency for metallic precursors diffuse through structure, degrading electrical properties (e.g., integrated value) dielectric. A possible solution consists in sealing porosity before metal deposition prevent any diffusion material. this paper, a new...
Transition metal dichalcogenides (TMDs) have received great attention over the past decade due to their wide range of optoelectronic properties and intrinsic compatibility with ultimately downsized devices (as ultrathin or even 2D layers), making them desirable for next-generation technologies. To obtain TMDs satisfying properties, very high process annealing temperatures are generally applied (above 550 °C), requiring a dedicated growth substrate followed by mechanical transfer TMD layer...
The infrared modes of annealed Si1−yCy alloys were studied experimentally and theoretically. grown on Si(100) substrates by solid-source molecular beam epitaxy characterized Fourier transform spectroscopy. At annealing temperatures above 850 °C, the localized vibrational mode substitutional C around 605 cm−1 diminished in intensity while another due to incoherent silicon carbide precipitates appeared at 810 cm−1. For lower processing temperatures, a peak 725 has been tentatively attributed...
Abstract Pt/NiO‐based devices are promising candidates for the next generation of resistive random access memories (RRAMs). X‐ray (XPS) and ultraviolet (UPS) photoemission performed to investigate chemical electronic properties this stack. After switching nickel oxide, as‐deposited switched areas compared in situ . The surface conductive area is characterised by a higher oxygen content as well an enhancement Ni 3+ oxidation state, which can be related defects such vacancies. results...
In this paper, we investigate the impact of thermal budget and thickness on chemical electronic properties stack. High temperature anneal at induces both regrowth reoxidation interfacial layer. A bias drop 1.1 eV is observed along whole stack via C 1s core-level shift ascribed to dipole fixed charges in . Electrical measurements suggest a strength 0.2 eV. Ellipsometry UV photoelectron spectroscopy are combined deduce electron affinity This value does not change with increasing or dielectric...