A5027185498- Thin-Film Transistor Technologies
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Neuroscience and Neural Engineering
- Advanced Memory and Neural Computing
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Nanowire Synthesis and Applications
- Neural dynamics and brain function
- Photoreceptor and optogenetics research
Shanghai University
2023-2025
In this paper, top-gate thin-film transistors (TFTs) of two stacked double-channel layers derived from atomic layer deposition in combination with the plasma-enhanced chemical vapor (PECVD) process were fabricated. The Hall measurement shows that mobility indium gallium oxide (IGO)/indium zinc (IGZO) active is 1.6 times more amorphous In-rich IGZO/IGZO due to superior carrier percolation conduction paths polycrystalline IGO layer. Furthermore, x-ray photoelectron spectroscopy analysis...
Abstract High‐density bio‐electrolyte‐gated synaptic transistors (BEGTs) array are promising for constructing neuromorphic computing architectures. Due to the bulk ion conductivity and crack sensitivity of electrolyte film, patterning is an indispensable route prevent spatial crosstalk improve flexibility device array. However, susceptibility bio‐electrolyte organic solvents poses challenges in developing reliable all‐photolithography techniques fabricating scalable, patterned, high‐density...
The performance of back channel etching (BCE) amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) was improved using a carbon tetrafluoride (CF <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{4}}{)}$ </tex-math></inline-formula> plasma treatment the (BC) after wet-etching process source–drain (SD) electrodes. X-ray photoelectron spectroscopy (XPS) analysis showed that...
A high mobility crystallized stacked-channel thin-film transistor (TFT) was fabricated and characterized. The stacked IGO/IGZO channel film consisting of an In-rich IGO layer a conventional IGZO by atomic deposition technology, where the upper amorphous is induced into nanocrystals lower preferentially oriented polycrystalline during thermal annealing at low temperature 300 °C. preferential growth nanocrystalline with matched crystal structure in favors transport electrons. In addition,...
With the development of information society, traditional von Neumann-based computing system is facing significant challenges. The search for an intelligent similar to biological brain would be a very effective solution present-day Neumann bottleneck. Electrolyte-gated transistors (EGTs) have received much attention because they can simulate synaptic behavior effectively. However, large-scale EGTs arrays are still lacking most existing reported use organic or liquid electrolytes, which poses...
Amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) are widely used in active-matrix displays because of their excellent stability, low off-current, high field-effect mobility, and good process compatibility. Among IGZO TFT device structures, back channel etching (BCE) is favorable due to production cost, short length small SD-to-gate capacitance. In this work, prepared the BCE TFTs each with passivation layer silicon dioxide (SiO<sub>2</sub>), polyimide (PI)...
This paper presents a oxide thin film transistors with high mobility by new fabricate method. The TFT ultra‐high of 55cm 2 /Vs has been obtained, and the PBTS NBTS also optimized.