K. Shen

ORCID: 0009-0005-7240-8544
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Research Areas
  • High-Energy Particle Collisions Research
  • Particle physics theoretical and experimental studies
  • Quantum Chromodynamics and Particle Interactions
  • Quantum and electron transport phenomena
  • Magnetic properties of thin films
  • Physics of Superconductivity and Magnetism
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Nuclear reactor physics and engineering
  • Magneto-Optical Properties and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • Magnetic and transport properties of perovskites and related materials
  • Advanced Optical Sensing Technologies
  • Air Quality and Health Impacts
  • Nuclear physics research studies
  • COVID-19 impact on air quality
  • Ion-surface interactions and analysis
  • Infrared Target Detection Methodologies
  • Radiation Detection and Scintillator Technologies
  • Microfluidic and Capillary Electrophoresis Applications
  • Markov Chains and Monte Carlo Methods
  • Radioactive contamination and transfer
  • Air Quality Monitoring and Forecasting
  • Target Tracking and Data Fusion in Sensor Networks

University of Science and Technology of China
2008-2025

Ball State University
2023-2024

Argonne National Laboratory
2023-2024

Xidian University
2024

Huzhou University
2024

Central China Normal University
2024

Frankfurt Institute for Advanced Studies
2024

Creighton University
2024

Guangxi Normal University
2024

Czech Technical University in Prague
2024

The electrohydrodynamics of compound liquid thread formation under an electric field in a flow-focusing microchannel is numerically studied via the phase-field method and dielectric model. influences potential flow rate on morphology size are clarified. A regime diagram provided to distinguish regimes (i.e., dripping–threading, jetting–threading, threading–threading regimes) from non-thread regimes. It found that force interfacial tension, both acting same direction, suppress growth inner...

10.1063/5.0259328 article EN Physics of Fluids 2025-04-01

We investigate the singlet-triplet relaxation due to spin-orbit coupling together with electron-phonon scattering in two-electron multivalley silicon single quantum dots, using exact diagonalization method and Fermi golden rule. The electron-electron Coulomb interaction, which is crucial electronic structure, explicitly included. effect induced by interface also taken into account. first study configuration a magnetic field Voigt identify channel of experimental data Xiao {\em et al.} [Phys....

10.1103/physrevb.81.235326 article EN Physical Review B 2010-06-28

Abstract Predicting air pollution is complex due to intertwined factors among local climate, built environment, and development stages. This study leverages K‐means clustering an improved Apriori algorithm investigate the combined effects of meteorological, morphological, socioeconomic on quality in 244 prefectural‐level Chinese cities. Results reveal that secondary industry GDP saturation vapor pressure strongly relate quality. Severe occurs when urban coupled with reduced green areas high...

10.1111/tgis.13156 article EN Transactions in GIS 2024-03-15

We investigate hole spin relaxation in intrinsic and $p$-type bulk GaAs from a fully microscopic kinetic Bloch equation approach. In contrast to the previous study on dynamics, we explicitly include intraband coherence nonpolar hole-optical-phonon interaction, both of which are demonstrated be great importance relaxation. The relative contributions D'yakonov-Perel' Elliott-Yafet mechanisms also analyzed. our calculation, screening constant, playing an important role relaxation, is treated...

10.1103/physrevb.82.115205 article EN Physical Review B 2010-09-10

We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double are discussed. In our work, electron-electron Coulomb interaction, which plays an important role electronic structure, is included. The spin mixing caused by spin-orbit coupling key to relaxation. show that selection rule widely used literature incorrect unless near crossing and/or anticrossing point can be markedly changed varying barrier height, interdot...

10.1103/physrevb.76.235313 article EN Physical Review B 2007-12-17

We propose a scheme of spin transistor that uses T-shaped structure with local Rashba interaction. A wide antiresonance energy gap appears due to the interplay two types interference: Fano--Rashba interference and interference. large current from area can be obtained via changing strength and/or length sidearm by using gate voltage. The robustness against strong disorder is demonstrated shows feasibility this for real application.

10.1103/physrevb.77.193305 article EN Physical Review B 2008-05-07

We investigate the temperature dependence of coefficients in Landau-Lifshitz-Gilbert equation ferromagnetic GaMnAs by employing Zener model. first calculate hole spin relaxation time based on microscopic kinetic equation. find that is typically several tens femtoseconds and can present a nonmonotonic due to variation interband mixing, influenced temperature-related Zeeman splitting. With time, we are able equation, such as Gilbert damping, nonadiabatic torque, stiffness, vertical stiffness...

10.1103/physrevb.85.075206 article EN Physical Review B 2012-02-09

Quantum wires with periodic local Rashba spin-orbit couplings are proposed for a higher performance of spin field-effect transistor. Fano-Rashba quantum interference due to the spin-dependent modulated structure gives rise broad energy range vanishingly small transmission. Tuning can provide on- or off-currents extremely large on/off current ratios even in presence strong disorder.

10.1063/1.3050326 article EN Journal of Applied Physics 2008-12-15

We study three-electron energy spectra in Si/SiGe single and vertically coupled double quantum dots where all the relevant effects, such as, Zeeman splitting, spin-orbit coupling, valley coupling electron-electron Coulomb interaction are explicitly included. In absence of magnetic field, our results agree well with experiment by Borselli {\em et al.} [Appl. Phys. Lett. {\bf 98}, 123118 (2011)]. identify spin configurations ground state experimental cases give a complete phase-diagram-like...

10.1103/physrevb.85.045311 article EN Physical Review B 2012-01-11

We study the Landé g-factor of conduction electrons in L-valley bulk GaAs and AlAs by using a three-band k⋅p model together with tight-binding model. find that is highly anisotropic can be characterized two components g⊥ g∥. close to free electron factor but g∥ strongly affected remote bands. The contribution from bands on depends how are treated. However, when magnetic field Voigt configuration, which widely used experiments, different models give almost identical g-factor.

10.1063/1.2986151 article EN Journal of Applied Physics 2008-09-15

We calculate the magnetization torque due to spin polarization of itinerant electrons by deriving kinetic Bloch equations based on $s$-$d$ model. find that first-order gradient inhomogeneity gives rise current-induced torques, which are consistent previous works. At second-order gradient, we an effective magnetic field perpendicular stiffness field. This is proportional nonadiabatic parameter $\ensuremath{\beta}$. show this vertical term can significantly modify domain-wall structure in...

10.1103/physrevb.83.085203 article EN Physical Review B 2011-02-11

The Gilbert damping in ferromagnetic semiconductors is theoretically investigated based on the $s$-$d$ model. In contrast to situation metals, all spin-conserving scattering supplies an additional spin relaxation channel due momentum dependent effective magnetic field of spin-orbit coupling, thereby modifies damping. presence a pure current, we predict new contribution interplay anisotropic coupling and current.

10.1103/physrevb.81.193201 article EN Physical Review B 2010-05-11

10.1016/j.ssc.2011.09.019 article EN Solid State Communications 2011-09-29

10.1016/j.ssc.2011.06.026 article EN Solid State Communications 2011-06-28

This work was supported by the Engineering and Physical Sciences Research Council, UK (grant nos. EP/I031014/1 EP/M023427/1), Ministry of Science Technology in Taiwan (project no. MOST-102-2119-M-002-004), NSF DMR-0847385, DMR-1120296, DMR-1056441), Office Naval N00014-12-1-0791), TRF-SUT Grant RSA5680052. P.D.C.K. acknowledges support from Royal Society through a University Fellowship. H.I.W. IGERT (Integrative Graduate Education Traineeship) program (DGE-0903653) Fellowship under grant...

10.17630/24d9f668-09ec-4bc4-ac9a-12bcb51005d2 article EN 2015-01-01

We investigate the electron spin dephasing in presence of phase recovering by a serried $\pi$-pulse sequence $n$-type (001) GaAs quantum wells wide range temperature and density regimes. Our numerical calculation is based on kinetic Bloch equation approach with all relevant scatterings explicitly included. find that rephasing pulse long inter-pulse spacing only has marginal influence lifetime both strong weak scattering limits. show can be significantly increased reducing spacing. More...

10.1088/0268-1242/27/6/065015 article EN Semiconductor Science and Technology 2012-05-11

The event plane detector (EPD), installed in the Solenoid Tracker at Relativistic Heavy-Ion Collider located Brookhaven National Laboratory, is a plastic scintillator-based device that measures reaction centrality and forward region of relativistic heavy-ion collisions. We used silicon photomultiplier (SiPM) arrays to detect photons produced scintillator via fiber connection. Signals from SiPM were amplified by front-end electronic (FEE) board sent analog-to-digital converter (ADC) boards...

10.1088/1748-0221/16/01/t01007 article EN Journal of Instrumentation 2021-01-27
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