A5037397029- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Optical Coatings and Gratings
- Semiconductor Quantum Structures and Devices
- Spectroscopy and Laser Applications
- Molecular Junctions and Nanostructures
- Analytical Chemistry and Sensors
Polytechnic University of Turin
2022-2024
Institute of Electronics, Computer and Telecommunication Engineering
2023-2024
National Research Council
2024
Vertically Integrated Systems (Germany)
2024
We demonstrate numerically and experimentally that, in vertical-cavity surface-emitting lasers (VCSELs), a non-chiral cavity can be converted into chiral one by the interaction between sub-wavelength grating tilted with respect to crystalline axes intrinsic semiconductor optical anisotropies, thus enabling emission of elliptically polarized light. The measured Stokes parameters such VCSEL, realized standard based VCSEL fabricati on process, are line modeling results. through simulations that...
In this work we investigate the ultrabroadband dynamics of transverse coupled cavity VCSELs.This study is based on a multimode rate equation model, whose parameters are directly provided by full-wave vectorial electromagnetic solver.This approach sets step towards comprehensive physicsbased modeling transverse-coupled VCSELs, providing relation between features optical supermodes and enhancements intensity modulation response.The emphasizes how bandwidth enhancement, ascribable to...
In this work we investigate patterned large-active area AlGaAs vertical-cavity surface-emitting lasers (VCSELs) targeting high-power single-transverse-mode emission. As a first step, our in-house 3D electromagnetic vectorial mode solver VELMS is validated against preliminary experimental data. Then, applied to implement single-mode operation on VCSELs featuring large-area rectangular oxide apertures. A comparative appraisal of different selection strategies based patterning the outcoupling...
In this work we investigate different architectures to realize a single-mode VCSEL array for high power applications. This is done by simulating large active-area with either metallic or grating-relief-based patterning at the outcoupling aperture. The investigated designs are compared, highlighting possible strategies improve fiber coupling improving far field (FF) profile. contribution also presents satisfactory match between simulations and FF experimental data obtained from measurements...
In this paper, we adopt our in-house physics-based solver VENUS (Vcsel Electro-optho-thermal NUmerical Simulator) to assess the static output characteristics of an AlGaAs/GaAs TJ-VCSEL emitting at 850 nm. To aim, is extended exploit a combined drift-diffusion model and NEGF formalism, that accurately captures tunneling effects across TJ. The results are compared commercial pin-like VCSEL, temperatures ranging from 20 110°C, cover broad set operations room temperature harsh environments.
We report high frequency (20-100 GHz range) optical field intensity oscillations in laterally-coupled-cavity verticalcavity surface-emitting lasers with several different techniques. The oscillation is defined by the photon energy splitting of coupled states. resonance effect stable an extended current range and can enable modulation resonances at higher frequencies as compared to conventional relaxation laser. This paves a way towards high-speed data transmission solutions rates beyond ~200...
We show that each polarization state on the Poincaré sphere (PS) can be accessed on-demand (Poincaré tailoring) by a semiconductor-based vertical-cavity surface-emitting laser (VCSEL) with two tilted sub-wavelength gratings (SWGs). develop vectorial Barkhausen criterion answers question: what conditions must cavity fulfill to support given desired state? Addressing this inquiry leads completely different strategy based entangled interplay between SWGs, resulting in an overall chiral cavity,...
This work reports a multiscale physics-based approach aimed at investigating the benefits of introducing single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs). Our comprehensive VCSEL solver VENUS is augmented with non-equilibrium Green's function (NEGF) to extract band-to-band tunneling rate across TJ. To showcase NEGF-VENUS features, we apply it commercial <italic xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The ultrabroadband operation of transverse-coupled-cavity vertical-cavity-surface-emitting lasers is investigated in this work. Relying on a closed-form expression the intensity modulation response, our model allows for an extended and fast parametric campaign design inputs, as well easy interpretation bandwidth enhancement.
Vertical-cavity surface-emitting lasers are promising light sources for sensing and spectroscopy applications in the midinfrared 3 ÷ 4 μm spectral region. A type-II superlattice active region is used carrier injection confinement, while a buried tunnel junction defines current aperture, decreasing series resistivity. Highly nanostructured to optimize device performance, mid-infrared VCSELs pose modeling challenges beyond semiclassical approaches. We propose quantum-corrected approach design...