A5108278289- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Metal and Thin Film Mechanics
- Electron and X-Ray Spectroscopy Techniques
- Electronic Packaging and Soldering Technologies
- Surface and Thin Film Phenomena
- Semiconductor materials and interfaces
- History and advancements in chemistry
- Magnetic properties of thin films
- Computational Drug Discovery Methods
- Electronic and Structural Properties of Oxides
- Collagen: Extraction and Characterization
- Semiconductor Lasers and Optical Devices
- Advanced Chemical Physics Studies
- Advancements in Photolithography Techniques
- Chemical Thermodynamics and Molecular Structure
- Extraction and Separation Processes
- Silk-based biomaterials and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Bone Tissue Engineering Materials
Hunan University
2025
Applied Materials (United States)
2009-2018
Adroit Materials (United States)
2013
University of Birmingham
2012
University of Auckland
2000
Trent University
1993-1994
Increasing demand for lithium metal is expected to rise above the current production levels. Most currently from mining and recovery of pegmatite ores. Recent research has emphasized brine sources such as geothermal water seawater. A novel liquid-membrane-extraction process investigated here these natural resources. Different carriers combinations were tried selectivity. carrier combination LIX54 (main component α-acetyl-m-dodecylacetophenone) TOPO (tri-octyl phosphine oxide) had a...
Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native oxide grew rapidly within few hours (XPS). Incorporation oxygen and carbon in the films (by AES SIMS) depended on underlying materials, such Ta, TaN, or Ru. Copper film texture XRD) agglomeration resistance AFM) showed correlations amounts in-film oxygen/carbon. Cobalt diffused through at normal processing temperatures SIMS)....
The primary challenge in molecular design and drug discovery lies efficiently exploring an immense chemical space (estimated between 1023 1060). scaffold serves as the core framework medicinal chemistry, guiding diversity assessment, conformational studies, hopping. While approximately 70% of approved drugs are based on known scaffolds, 98.6% ring-based scaffolds virtual libraries remain unvalidated. Traditionally, complexity ring systems, a crucial component has been assessed using index...
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical-vapor-deposition technique. Selectivity of the deposition between and dielectric surfaces was improved raising pressure. Degree electromigration (EM) resistance enhancement observed to be dependent on thickness. Compared no-Co control, significant EM lifetime when cap is thicker than 6 nm.
This paper describes the growth of film formed by evaporation antimony on to a Au(111) surface at room temperature. It has been studied using Auger electron spectroscopy, energy-loss low-energy diffraction, and work function measurements. The first layer forms (2√3×2√3)R30° structure, probably with AuSb2 stoichiometry. Subsequent layers are pure Sb, layer-by-layer mode, disordered. atomic density Sb is approximately same in subsequent layers, close that for Sb. compared formation bimetallic...
Mammalian cells are known to respond the elastic modulus of surface which they adhere. Consequently, there is interest in developing strategies control moduli materials, including hydrogels. One way controlling hydrogels introduce reinforcing agents such as inorganic for example hydroxyapatite (HA). Although several authors have reported reinforcement with ceramic particles, not been any studies investigate effect size and crystallinity HA particles on mechanical properties hydrogel. In this...
This paper describes replacement-metal-gate (RMG) fill integration solutions with a cobalt-reflow process combined thin barrier layer for future node FinFET and gate-all-around technology. As CMOS scaling continues, the conventional tungsten CVD RMG runs out of room to in scaled gate trench. The lack low resistivity W causes conductance degradation negatively impacts performance. A unique Co-fill thickness is proposed as new solution. Co significantly improves at sub-15nm CD by seam-free gap...
Physical vapor deposited (PVD) Cu seed layers have been successfully implemented for gap-fill in feature sizes the 2x nm flash devices. By tuning incident angle of incoming flux ions as well utilizing resputtering parameter, overhang, sidewall coverage and asymmetry can be controlled to enable complete fill by subsequent electrochemical deposition (ECD). Chemical (CVD) Cobalt (Co) films were also investigated an enhancement layer gap-fill. It was observed that insertion a 1.5nm-thick CVD Co...
Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used evaluate the scalability of TaN/Ta, RuTa, TaN + Co MnOx metallization schemes. So far, RuTa scheme has proved be most promising candidate achieve successful 25 interconnects, providing high electrical yields good compatibility slurries during CMP.
A novel plasma enhanced atomic layer deposition (PEALD) process was demonstrated for tantalum nitride (TaN) based on the reduction of pentakis(dimethylamino)tantalum (PDMAT). High-power, direct densification steps were incorporated into each PEALD growth cycle, resulting in ion bombardment TaN surface during growth. These enabled low-resistivity, high-density TaN. Physical film by confirmed from observed thickness deposited with compared to without steps, an equivalent number cycles. In...
Co films with various thicknesses were selectively deposited as Cu capping layers by chemical vapor deposition technique. Selectivity of the between and dielectric surfaces was improved both raising pressure adopting a pre-clean process prior to deposition. Degree electromigration resistance enhancement observed be dependent on thickness. Compared no-Co control, significant EM lifetime when cap is thicker than 6nm.
The deposition of TaN thin films were achieved using plasma enhanced atomic layer (PEALD) technique. In this paper, we demonstrate the ability to adjust film properties such as composition, density and resistivity with various conditions. deposited by PEALD exhibited a lower 200 - 500 μΩ-cm compared thermally ALD (> 1000.μΩ-cm). increases 11-13 g/cm3 9 for thermal films. Cu diffusion barrier property was superior application in back end line interconnects will be discussed.
Tungsten has been the material of choice for contact and gate metallization, continues to be used in FINFET architectures. In this work, we developed a low resistivity conformal Fluorine free tungsten film that can nucleate WF6 based ALD/CVD W growth while blocking fluorine diffusion from bulk fill material. It provides significant benefit integration performance enhancement compare common processes metallization.
It has been shown previously that antimony evaporated onto a Au(111) surface grows in layer-by-layer mode. The present work compares the initial, fast-oxidation stage of these films with on bulk polycrystalline antimony. Measurements were carried out an ultrahigh-vacuum environment using Auger electron spectroscopy, low-energy diffraction, electron-energy-loss and work-function change measurements. At 300 K for oxygen pressures between...
Abstract not Available.