A5070907242- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Metal and Thin Film Mechanics
- Advancements in Semiconductor Devices and Circuit Design
- Electrodeposition and Electroless Coatings
- Photonic and Optical Devices
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Surface Polishing Techniques
- Research studies in Vietnam
- Lung Cancer Treatments and Mutations
- Magnetic properties of thin films
- Photonic Crystals and Applications
- Wireless Power Transfer Systems
- Energy Harvesting in Wireless Networks
- Nanoporous metals and alloys
- Spacecraft and Cryogenic Technologies
- Additive Manufacturing and 3D Printing Technologies
- CCD and CMOS Imaging Sensors
- Advanced Battery Technologies Research
- Antenna Design and Analysis
- Cancer Genomics and Diagnostics
- Diamond and Carbon-based Materials Research
Medical Genetics Center
2025
Texas Tech University Health Sciences Center
2025
Texas Tech University
2025
Agricultural Genetics Institute
2024
SUNY Polytechnic Institute
2015-2022
Research Foundation for the State University of New York
2022
Jet Propulsion Laboratory
2007-2016
Center for Nanoscale Science and Technology
2015
IBM (United States)
2009-2014
California Institute of Technology
2008-2010
Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native oxide grew rapidly within few hours (XPS). Incorporation oxygen and carbon in the films (by AES SIMS) depended on underlying materials, such Ta, TaN, or Ru. Copper film texture XRD) agglomeration resistance AFM) showed correlations amounts in-film oxygen/carbon. Cobalt diffused through at normal processing temperatures SIMS)....
Introduction: Multimodal treatment of non-small cell lung cancer at Dong Nai General Hospital needs to be evaluated. CEA and Cyfra21-1 are the most commonly used markers in clinical diagnosis cancer. Determining sensitivity specificity practice as well redetermining optimal cut-off threshold test will help doctors department diagnosing disease. Methods: Cross-sectional analysis. Cox regression was compare risk mortality perioperative period. ROC curve plotted calculate AUC found using Youden...
Lung cancer (LC) screening via low-dose computed tomography (LDCT) faces challenges including high false-positive rates and low patient compliance. Circulating tumor DNA (ctDNA)-based tests offer a minimally invasive alternative but are limited by costs sensitivity, particularly in early-stage detection. This study introduces cost-effective, shallow genome-wide sequencing approach for LC detection profiling multiple cell-free (cfDNA) signatures. We developed multimodal cfDNA assay with...
Mở đầu: Siêu âm sớm sau mổ có thể tiên lượng khả năng trưởng thành của cầu nối động tĩnh mạch cũng như phát hiện các biến chứng. Mục tiêu: Trình bày đặc điểm máu chi trên bằng siêu trước tạo và phân tích sự thay đổi về kích thước, lưu mổ. Đối tượng-phương pháp nghiên cứu: Chúng tôi mô tả hồi cứu 80 trường hợp được phẫu thuật tại Bệnh viện Đa khoa Đồng Nai từ 4/2022 đến 4/2023. thực 1 ngày, 2 tuần 6 để đánh giá đường kính máu. Kết quả: Có bệnh nhân mạch. Với cẳng tay, trung vị nuôi dẫn lần...
The cryogenic characterization (93 K/-180°C to 300 K/27°C) and compact modeling of a high-voltage (HV) laterally diffused MOS (LDMOS) transistor that exhibits carrier freeze-out are presented in this paper. Unlike low-voltage devices, it was observed HVMOS structures experience effects at much higher temperatures, resulting an output current roll-off beyond transition temperature. Standard models generally do not guarantee performance below 218 K (-55°C), certainly incorporated them. This...
For high-volume production of 3D-stacked chips with through-silicon-vias (TSVs), wafer-scale bonding offers lower cost compared bump bond technology and is promising for interconnect pitches smaller than 5 µ using available tooling. Prior work has presented integration tungsten TSV low-power applications. This paper reports the first use low-temperature oxide copper to stack high performance cache cores manufactured in 45 nm Silicon On Insulator-Complementary Metal Oxide Semiconductor...
The role of electrolyte additive chemistry in the incorporation non-metallic impurities (such as C, S, and Cl) electrodeposited Cu its subsequent recrystallization behavior was characterized for both blanket films plated into Damascene features. Chemistries yielding pure "doped" were considered. For wide features (∼ >1 μm), impurity levels correspond well with film observations, while narrow (∼50 nm), elevated within features, regardless type. Recrystallization observed to be relatively...
HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layers, 25-Å thick, were grown by cyclic Hf sputter deposition and room temperature oxidation steps on chemically oxidized Si(001). Subsequent in situ annealing TiN yield a high-κ gate-stack for which the original 8-Å-thick SiO layer is eliminated, as confirmed transmission electron microscopy. Transistors fabricated with this achieve an equivalent oxide thickness inversion T...
We report on the development of a chemical mechanical planarization (CMP) process for thick damascene Ta structures with pattern feature sizes down to 100 nm. This CMP is core fabrication sequence scalable superconducting integrated circuits at 300 mm wafer scale. work has established elements various CMP-related design rules that can be followed by designer layout include Ta-based coplanar waveguide resonators, capacitors, and interconnects tantalum-based qubits single flux quantum...
A 32 nm BEOL with PVD CuMn seedlayer and conventional PVD-TaN/Ta liner was fully characterized by fundamental, integrated, reliability methods. confirmed to have fundamental advantages over CuAl, such as higher electromigration (EM) for the same Cu line resistance (R). Both low R high (EM, SM, TDDB) were achieved. Improved extendibility of relative CuAl also supported studies alloy interactions advanced materials Ru Co, enhancement ultra-thin TaN barrier performance.
For high-volume production of 3D-stacked chips with through-silicon-via (TSVs), wafer-scale bonding offers lower cost compared bump bond technology [1][2][3] and is promising for interconnect pitch <;= 5μ range using available tooling. Prior work [3] has presented integration tungsten TSV low-power applications. This paper reports the first use low-temperature oxide copper to stack high performance cache cores manufactured in 45nm SOI-CMOS embedded DRAM (EDRAM) having 12 13 wiring levels per...
Technologies enabling the development of compact systems for wireless transfer power through radio frequency waves (RF) continue to be important future space based systems. For example, lunar surface operation, technology enables rapid on-demand transmission loads (robotic systems, habitats, and others) eliminates need establishing a traditional grid. A typical receiver consists an array rectenna elements. Each element antenna together with high speed diode storage capacitor configured in...
La x Lu 1 − O 3 thin films were deposited on 300 mm silicon wafers by physical vapor deposition and fabricated into field-effect transistors using a gate-first process flow. The characterized transmission electron microscopy, Rutherford backscattering spectrometry, synchrotron x-ray diffraction. results show the remain amorphous even at temperatures of 1000 °C. dielectric properties LaxLu1−xO3 (0.125≤x≤0.875) evaluated as function film composition. have constant (K) 23 across composition...
300mm Si wafer-scale oxide fusion bonding and mechanical/wet etch assisted wafer thinning processes were combined with a TSV-last 3D integration strategy to fabricate electrical open/short yield learning on through-wafer TSV test chains.
Spatially-resolved picosecond laser induced transients have been measured in a 0.18 mum CMOS inverter test structure as function of temperature. Sensitive <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</i> -drain and xmlns:xlink="http://www.w3.org/1999/xlink">p</i> nodes scaled size to accommodate characteristic differences between ion tracks. Images based on pulse characteristics collected from 325 K 400 transient currents extracted strikes...
The effects of proton irradiation on the performance key devices and mixed-signal circuits fabricated in a SiGe BiCMOS IC design platform intended for emerging lunar missions are presented. High-voltage (HV) transistors, bandgap reference (BGR) circuits, general-purpose high input impedance operational amplifier (op amp), 12-bit digital-to-analog converter (DAC) investigated. were designed implemented first-generation technology irradiated with 63 MeV protons. degradation due to fluence each...
The impact of the existence Cu grain boundaries on degradation interconnect lifetime at 45 nm technology node and beyond has suggested that improved electromigra‐tion in become increasingly important. In this paper, solute effects non‐metallic (C, Cl, O S) metallic (Al, Co, In, Mg, Sn, Ti) impurities elec‐tromigration were investigated. alloy interconnects fabricated by adjusting electroplating solutions or depositing a seed, thin film layer impurity, an liner, metal cap. A large variation...
Abstract not Available.
A new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced radiation effects as a function of temperature is described in detail. The built system centered on diffraction-limited focusing the output from broadband (690-960 nm) ultrafast Ti:sapphire Tsunami pumped by 532 nm Millennia laser. An acousto-optic modulator used provide pulse picking down event rates necessary technologies and under study. dependence charge generation process ions photons briefly...
This paper presents the first comprehensive investigation of impact proton irradiation on performance high-voltage (HV) nMOS transistors implemented in a low-voltage (LV) SiGe BiCMOS technology. The effects gate bias, substrate and operating bias radiation response these are examined. Experimental results show that radiation-induced subthreshold leakage current under different biasing conditions remains negligible after exposure to total dose 600 krad(Si). We find there differences LV HV...
We used Cu contact metallization to solve one of the critical challenges for 22 nm node technology. allowed us demonstrate world's smallest and fully functional 6T-SRAM . was executed using CVD Ru-containing liner. obtained early reliability data by thermally stressing bulk device. Bulk device parameters such as junction gate leakage currents overlap capacitance were stable after BEOL anneal stress. also demonstrated extendibility 15 contacts.
A fully functional Si photonics and 65-nm CMOS heterogeneous 3D integration is demonstrated for the first time in a 300mm production environment. Direct oxide wafer bonding was developed to eliminate voids between SOI bulk wafers. via-last, Cu through-oxide via (TOV) low capacitance electrical connections with no impact on performance. yield approaching 100% &gt;20,000 chains.
The morphology and behavior of thin Cu films deposited using electroless, electrolytic, physical vapor deposition (PVD) is studied Ru as a substrate. was by both PVD atomic layer (ALD). Electrolessly on resists agglomeration with annealing, while ALD it exhibits tendency for when annealed. Electrolytically also if the to plating queue time short; Ru, appears agglomerated as-deposited, even short plate times. In contrast electrochemically Cu, does not agglomerate anneal either or long Ru-Cu...