A5012731728- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- 3D IC and TSV technologies
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Surface Polishing Techniques
- Phase-change materials and chalcogenides
- Silicon Nanostructures and Photoluminescence
- CCD and CMOS Imaging Sensors
- Electronic Packaging and Soldering Technologies
- Transition Metal Oxide Nanomaterials
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
National Yang Ming Chiao Tung University
2017-2024
Abstract In this study, we present a novel Elevated Epitaxy technique that has been developed for the fabrication of single-crystal germanium (Ge) films with (100) orientation, which is ideal monolithic three-dimensional integrated circuits (3D ICs). The crystalline quality and orientation Ge were validated using scanning electron microscopy (SEM), backscatter diffraction (EBSD), transmission (TEM). Additionally, heat transfer dynamics during laser crystallization process analyzed through...
This study presents an innovative Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) technique for producing single-crystal channels in upper-layer circuits. By employing a green nanosecond laser process, the overall process temperature remains within low thermal budget of monolithic 3DIC, enabling transformation amorphous silicon thin films into high-quality continuous with uniform crystal orientation. Furthermore, we confirmed successful fabrication films, aligning crystallographic orientation...
This paper proposed a fabrication of p-type Germanium (Ge) tri-gate field-effect transistors (Tri-gate FETs) via green nanosecond laser crystallization (GNSLC) and counter doping (CD). By using the GNSLC, nano-crystalline-Ge (nc-Ge) with grain size 80 nm could be turned into polycrystalline Ge (poly-Ge) that above 1 μm. With increase power, improved crystallinity lower hole concentration poly-Ge were also verified by Raman spectra Hall measurement. To fabricate high-performance Tri-gate...
This letter proposes and demonstrates single-crystal Germanium (Ge) growth by elevated-laser-liquid-phase-epitaxy (ELLPE) the fabrication of Ge Fin field-effect transistors (FinFETs) for monolithic three-dimensional integrated circuits (monolithic 3D ICs). technique permitted single-crystalline (100) film FinFETs without random grain boundaries. In comparison with poly-Ge FinFETs, ELLPE exhibit superior performance uniformity. Moreover, ANSYS simulated maximum temperature bottom during does...
A single-crystal-island (SCI) technique is demonstrated using low thermal budget pulse laser process to fabricate single-crystal islands for monolithic 3D back-end-of-line (BEOL) FinFET circuits. The single-crystallinity are verified with SECCO etch, HREM, TEM, and EBSD. BEOL FinFETs fabricated in the designed Si exhibit excellent electrical performance intra-island variability. To mitigate effects of island-to-island device variation due random island crystal orientations,...
Abstract In this study, we present a low thermal budget elevated-laser-liquid-phase-epitaxy technique designed for the precise fabrication of single-crystal islands (SCIs) intended use in middle-end-of-line (MEOL) FinFETs. Each these SCIs features (100) orientation tended from Si seeding structure and is successfully integrated as channel materials MEOL circuit monolithic 3D IC (3DIC). This effectively mitigates typical performance disparities associated with poly-Si upper tiers, addressing...
A Ge single-crystal-island (Ge-SCI) technique and thus fabricated monolithic 3D back-end of line (BEOL) FinFET were demonstrated for the first time. The Ge-SCI laser crystallization step results in minimal heating underlying Si substrate (T<155°C according to thermal simulation) circuit fabrication temperature was kept below 400°C. functionality standard logic cells a 19-stage ring oscillator unaffected by process as required technology. Simulation voltage regulator (FIVR) shows switch...
Amorphous InGaZnO (a-IGZO) is used as TFTs channel layer, it deposited with atmospheric-pressure PECVD (AP-PECVD). By AP-PECVD, a-IGZO can be without vacuum system, and keep the cost down applied to large area manufacturing. To further improve electrical characteristics of (AP-IGZO) TFTs, post processing by re-oxidation (NBRO) treat on top AP-IGZO thin film. The investigation shows when NBRO post-deposited annealing (PDA) power 400W for 300 seconds, better characteristic achieved mobility...