A5101050978- 2D Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Metamaterials and Metasurfaces Applications
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Advanced Photocatalysis Techniques
- Plasmonic and Surface Plasmon Research
- Gold and Silver Nanoparticles Synthesis and Applications
- Electrocatalysts for Energy Conversion
- Nanoparticle-Based Drug Delivery
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Topological Materials and Phenomena
- Molecular Junctions and Nanostructures
- Advanced Antenna and Metasurface Technologies
- Semiconductor materials and devices
- Microwave Dielectric Ceramics Synthesis
- Advanced Fiber Laser Technologies
- Advanced Optical Imaging Technologies
- Photonic Crystal and Fiber Optics
- Phase-change materials and chalcogenides
- Ferroelectric and Negative Capacitance Devices
- Ichthyology and Marine Biology
- Acoustic Wave Resonator Technologies
Sichuan Normal University
2019-2024
University of Chinese Academy of Sciences
2016-2020
Institute of Physics
2015-2020
Chinese Academy of Sciences
2015-2020
National Laboratory for Superconductivity
2016-2020
Renmin University of China
2017
Collaborative Innovation Center of Quantum Matter
2017
National Center for Nanoscience and Technology
2017
Jilin University
2012
East China University of Science and Technology
2008
Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale highly oriented continuous uniform films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The film is high quality stitched many 0°, 60° domains 60°-domain boundaries. Moreover, such can be transferred stacked a simple stamp-transfer process, substrate reusable for subsequent growth. Our progress would facilitate scalable...
In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T transition in MoS2 to form mosaic structures. These transitions are stabilized by point defects (single S-vacancies) the sizes of induced 1T domains typically few nanometers, as revealed scanning tunneling microscopy measurements. On basis selected-area patterning process, fabricated FETs inducing within metal...
Abstract Recently, monolayer molybdenum disulphide (MoS 2 ) has emerged as a promising and non–precious electrocatalyst for hydrogen evolution reaction. However, its performance is largely limited by the low density poor reactivity of active sites within basal plane. Here, we report that domain boundaries in plane MoS can greatly enhance reaction serving sites. Two types effective boundaries, 2H-2H 2H-1T phase were investigated. Superior catalytic activity, long-term stability universality...
Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing shear modes are observed in commensurate bilayers for the first time; these can serve persuasive fingerprints interfacial quality configurations.
Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report epitaxy route toward 4 in. highly oriented and large domains on sapphire. Benefiting from multisource design for our chemical vapor deposition setup optimization growth process, successfully realized material uniformity across entire wafer greater than 100 μm...
Optical logic gates play important roles in all-optical circuits, which lie at the heart of next-generation optical computing technology. However, intrinsic contradiction between compactness and robustness hinders development this field. Here, we propose a simple design principle that can possess multiple-input-output states according to incident circular polarization direction based on metasurface doublet, enables controlled-NOT infrared region. Therefore, directional asymmetric...
Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays crucial role in tuning heterostructure properties. Here we report experimental investigation twist angle-dependent conductivities MoS2/graphene van heterojunctions. We found that vertical conductivity heterojunction can be tuned by ∼5 times under configurations,...
Control of the precise lattice alignment monolayer molybdenum disulfide (MoS 2 ) on hexagonal boron nitride (h‐BN) is important for both fundamental and applied studies this heterostructure but remains elusive. The growth precisely aligned MoS domains basal plane h‐BN by a low‐pressure chemical vapor deposition technique reported. Only relative rotation angles 0° or 60° between are present. Domains with same orientation stitch form single‐crystal, different orientations from mirror grain...
MoS2 nanoscrolls are formed by argon plasma treatment on monolayer sheet. The nanoscale scroll formation is attributed to the partial removal of top sulfur layer in during process. This convenient, solvent-free, and high-yielding nanoscroll technique also feasible for other 2D transition metal dichalcogenides.
Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering. Here, we investigate how the affect photoluminescence (PL) Raman spectra of MoS2/graphene heterostructures. Based on a series heterostructure samples different angles, found that PL monolayer MoS2 in these are strongly angle dependent. When evolves from 0° to 30°, both intensity emission energy...
Integrated thin film transistors based on CVD-grown high-quality monolayer MoS2 are reported. Every device has the stable and uniformity mobility ˜13.9 ± 2 cm2 v-1 s-1 an on/off ratio higher than 105. These field effect exhibit remarkably high mechanical flexibility with no obvious change of electrical characteristics upon strain ˜1%. As a service to our authors readers, this journal provides supporting information supplied by authors. Such materials peer reviewed may be re-organized for...
The performance of two-dimensional (2D) MoS2 devices depends largely on the quality itself. Existing fabrication process for 2D relies lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering films substrates based proper interface engineering. utilizes strong adhesion between gold removes film contact with directly, leading pattern generation residuals. Significantly improved...
The investigation and control of quantum degrees freedom (DoFs) carriers lie at the heart condensed-matter physics next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining superior properties individual 2D materials manipulating spin, layer, valley DoFs. $\mathrm{Mo}{\mathrm{S}}_{2}$/graphene heterostructures, harboring prominent spin-transport graphene, giant spin-orbit...
Compared with conventional mirrors that behave as isotropic electromagnetic (EM) reflectors, metamirrors composed of periodically aligned artificial meta-atoms exhibit increased degrees freedom for EM manipulations. However, the functionality most is fixed by design, and how to achieve active control still elusive. Here, we propose a multistate metamirror based on nonvolatile phase change material Ge2Sb2Te5 (GST) four distinct functionalities can be realized in infrared region exploiting...
Theoretical calculation and experimental measurement have shown that twin grain boundary (GB) of molybdenum disulphide (MoS2) exhibits extraordinary effects on transport properties. Precise measurements need to verify the mechanism GB in MoS2. Here, monolayer with a was grown our developed low-pressure chemical vapor deposition (CVD) system, we investigated how affects electrical properties MoS2 by temperature-dependent studies. At low temperature, can increase in-plane conductivity...
Hydrogen is a sustainable and environmentally friendly fuel produced by electrolytic water splitting. This requires efficient easily accessible electrocatalysts to minimize energy consumption. Recently, as substitute the conventional noble-metal-based catalysts, two-dimensional transition metal dichalcogenides (TMDs) have demonstrated their potential inexpensive catalysts for hydrogen evolution reaction (HER). In this review, we offer an overview of recent progresses in development layered...