A5103085455- Aluminum Alloys Composites Properties
- Advancements in Semiconductor Devices and Circuit Design
- Advanced materials and composites
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Metal Alloys Wear and Properties
- Semiconductor Lasers and Optical Devices
- Copper-based nanomaterials and applications
- Embedded Systems and FPGA Design
- Silicon and Solar Cell Technologies
- Advanced Chemical Sensor Technologies
- Gas Sensing Nanomaterials and Sensors
- Electrodeposition and Electroless Coatings
- Advancements in Photolithography Techniques
- Powder Metallurgy Techniques and Materials
- Advancements in PLL and VCO Technologies
- Electrocatalysts for Energy Conversion
- Nanofabrication and Lithography Techniques
- Advanced Surface Polishing Techniques
- Innovations in Concrete and Construction Materials
- Advanced Welding Techniques Analysis
- Optical Coatings and Gratings
- Integrated Circuits and Semiconductor Failure Analysis
- Natural Fiber Reinforced Composites
- Analytical Chemistry and Sensors
Huazhong University of Science and Technology
2018
Asia University
2014
Ministry of Industry and Information Technology
1992
Abstract The density functional theory calculations of the adsorption model NiCl 2 , Ni, and Cl on Fe surface, as well interface electronic properties, provide theoretical guidance for improving Ni electrodeposition process. properties these three species (100) crystal surface at different coverages, single surfaces (100), (110), (111), were studied through energy, charge density, occupancy, DOS. results indicate that H sites are most favorable surface. T sites, B all potential . order...
Threshold voltage shift is a major problem for UMOS device. This study explains how device performance can be affected by silicon defects (interstitial and Vacancy). Interstitial may induced epitaxy process or trench process. enhances the dopant diffusion. In TCAD simulation interstitial distribution different diffusion model shows in threshold distribution.
In this work, high voltage NLDMOS performance in terms of blocking and On-Resistance have been investigated. order to obtain the optimum electrical several key factors optimized such as linearity HVNW profile, drift length source field plate. Linear profile is obtained by mask. having 100 V-300 V lower On-resistance developed based on 0.35um BCD Technology with less manufacturing cost. It investigated that has poor over 300V.
This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson's solution is used, which gives the closed form solutions potential and electrical field distributions as a function structure parameters top electrode bias. Dependence substrate equivalent series resistance on current path length to ground also simulated. Optimum high-capacitance low devices proposed. Analytical results are in good agreement with simulation obtained by sentaurus previous...
Indium oxide (In 2 O 3 ) has been employed for gas sensors as an important candidate.Here we demonstrated the sensitive based on In quantum dots synthesized via solvetheramal methodology.A room-temperature films deposition was utilized sensor fabrication, followed by Cu salt surface ligand exchange with a moderate annealing treatment.The CQD-based exhibited excellent H S-sensing performance response up to 90 upon 5 ppm S fast and recovery time being 72 s 200 at low operating temperature of...