A5035899227- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Advanced Chemical Physics Studies
- Chalcogenide Semiconductor Thin Films
- GaN-based semiconductor devices and materials
- Physics of Superconductivity and Magnetism
- Molecular Junctions and Nanostructures
- Dysphagia Assessment and Management
- Semiconductor materials and interfaces
- Quantum Dots Synthesis And Properties
- Voice and Speech Disorders
- Tracheal and airway disorders
- Magnetic properties of thin films
- Quantum and electron transport phenomena
- Advanced Condensed Matter Physics
- Photocathodes and Microchannel Plates
- Dental Health and Care Utilization
- Electron and X-Ray Spectroscopy Techniques
- Diamond and Carbon-based Materials Research
- Spectroscopy and Laser Applications
- solar cell performance optimization
- Analytical Chemistry and Chromatography
- Semiconductor Lasers and Optical Devices
- Electronic and Structural Properties of Oxides
Nippon Dental University
2023-2025
University of Miyazaki
2002-2009
Fujitsu (Japan)
1976-1993
A new growth method has been developed for the atomic layer epitaxy of GaAs. The gas system was based on a conventional metalorganic vapor phase epitaxial but decomposition methylgallium suppressed in stagnant by using fast pulsed stream from jet nozzle. enabled us to grow high purity layers with clear self-limiting mechanism even at 560 °C. variations rate respect various parameters were explained equations selective adsorption surface As atoms. had an activation energy 42 kcal/mole 440
We carried out an in situ investigation of GaAs grown by atomic layer epitaxy, using x-ray photoelectron spectroscopy system combined with a metalorganic vapor phase epitaxial growth chamber, where Ga(CH3)3 and AsH3 were the source gases. It has been proved that Ga(CH3)n molecules (where n=1 or 2) are decomposed into Ga atoms after being adsorbed on surface around 500 °C. This means self-limited adsorption epitaxy can be achieved adsorbate is Ga.
ABSTRACT Background Receiving home care improves the quality of life older adults. Nonetheless, limited studies have examined factors influencing pneumonia onset and discontinuation in adults living at home. Objective To clarify associated with receiving for dysphagia to identify risk discontinuation. Methods This study included 162 (≥ 65 years) who were care. Nutritional status, history pneumonia, swallowing function, activities daily living, comorbidities assessed. The participants...
This study aimed to longitudinally investigate the temporal relationship between tongue pressure and malnutrition in older adults with dysphagia determine antecedent factors. is a retrospective cohort study. In total, 177 participants aged ≥65 years who visited specialized rehabilitation clinic 2014 2018 were enrolled. Malnutrition was assessed based on phenotypic criteria (unintentional weight loss, low body mass index, reduced skeletal muscle mass) from Global Leadership Initiative...
Atomic-layer epitaxy (ALE) has been developed for GaAs and AlAs using a pulsed vapor-phase method metal-organic compounds hydride. Growth rate investigated in detail as function of various growth parameters. When arsine gas-pulse duration is increased, the decreases drastically once film thickness [1 monolayer (ML) GaAs(100), (110), (111)B, 2 ML AlAs(100) 3 AlAs(110)] reached. A model suggested to explain result.
Atomic layer epitaxy (ALE) of GaP was performed for the first time in a low-pressure metalorganic vapor phase epitaxial (MOVPE) reactor using trimethylgallium (TMG) and phosphine (PH3) as sources. Growth self-limiting exposure each reactant. X-ray photoelectron spectroscopy (XPS) analyses were carried out to identify adsorbates on growth surface. There no methyl groups surface Ga mechanism is due selective adsorption TMG by P atoms. When substrate exposed sufficient flow after submonolayer...
We report on the initial stages of GaAs and AlAs growth Si substrates, focusing that done using atomic-layer epitaxy (ALE). ALE was performed 3° off (100) substrates at 500 °C an arsine metalorganic gas source. Thin layers (5–350 monolayers) were examined Auger electron spectroscopy, Raman scattering, transmission microscopy (TEM), several other techniques. Measurements showed starts from three-dimensional but changes to layer by early stage. Coverage is remarkably improved initiating...
A selectively doped InP/In0.53Ga0.47As heterostructure has been prepared by chloride transport vapor phase epitaxy. Hall and Subnikov-de Haas measurements revealed the existence of a high mobility, two-dimensional electron gas at interface this heterostructure. Enhanced mobilities were as 106 000, 71 200, 9 400 cm2/Vs 4.2, 77, 300 K, respectively. These indicate excellent properties grown
This study examined the oral status and presence of teeth requiring treatment among older adults receiving home medical care.
We studied the self-limiting growth of GaAs using three kinds Ga-alkyl compounds−trimethylgallium (TMGa), ethyldimethylgallium, and triethylgallium−as atomic layer epitaxy (ALE) sources. Perfect behavior was found only for TMGa. The mechanism could be explained by surface site selectivity metalorganic molecules in adsorption, desorption, decomposition processes. that degree declined as methyl groups attached to a Ga atom were replaced ethyl groups. believe TMGa molecule is adsorbed without...
We describe the results of transmission electron microscope study ordered and modulated structures in InGaP alloy semiconductors grown on (001) GaAs substrates by metalorganic vapor phase epitaxy, chloride-vapor liquid epitaxy. Strong ordering CuPt-type has been observed epitaxy at 630 °C, which is associated with an abnormality photoluminescence peak energy. have also crystals but degree weaker 576–740 °C exhibit normal energies. On other hand, no structure found There dependence growth...
A new emission line due to a recombination of an exciton bound cobalt acceptor has been observed at 1.489 eV in vapor-grown GaAs. Detailed Zeeman analysis the revealed that corresponding center tetrahedral symmetry crystal. Relevant splitting factors are ge=−0.47(electron), K=0.61(hole), and L=−0.05(hole).
Plasma-enhanced halide chemical vapor deposition (CVD) for Bi-Sr-Ca-Cu-O (BSCCO) thin film has been developed. Superconducting BSCCO films were fabricated on 3-in-diameter sapphire substrates without postannealing. The CVD apparatus four source-gas generation cells in which source materials (BiCl/sub 3/, SrI/sub 2/, CaI/sub and CuI) are evaporated or sublimated by heaters. Source gases carried to the chamber with helium. Oxidizing O/sub 2/ and/or H/sub 2/O. total pressure was 0.1 torr,...