A5068231370- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Numerical Analysis Techniques
- Perovskite Materials and Applications
- Thin-Film Transistor Technologies
- Advanced Battery Materials and Technologies
- Advanced Battery Technologies Research
- ZnO doping and properties
- Ion-surface interactions and analysis
- 3D IC and TSV technologies
- Copper Interconnects and Reliability
- 3D Shape Modeling and Analysis
- Computer Graphics and Visualization Techniques
- Advancements in Battery Materials
University of Oxford
2022-2025
Ningxia University
2020
Aluminium-doped ZnO deposited by ALD provides transparency, conductivity, and c-Si passivation for high-efficiency solar cells, reducing the need indium-based TCOs. Precise Zn/Al control enables with J 0 < 1 fA cm −2 740 mV iV OC .
Minimising charge losses at silicon interfaces is a major development area for highly efficient solar cells. Here we report on the interface improvements achieved by establishing surface electric field during low-temperature firing of dielectric thin films. By inducing corona film stack, observe significant modifications to silicon-dielectric upon annealing, which correlate with characteristics defects. The passivation properties strongly depend polarity and strength firing, as well...
Abstract Indium‐based transparent conducting electrodes (TCEs) are a major limiting factor in perovskite/silicon tandem cell scalability, while also maximum efficiencies. In this work, we propose novel TCE based on electrostatically doped graphene monolayers to circumvent these challenges. The electrode is enabled by thin film dielectric that charged and interfaced film, optimally exploiting electrostatic doping. field effect mechanism allows the modulation of charge carriers monolayer as...
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source efficiency loss in photovoltaic cells. Here, we present SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> and AlO nanolayers as promising interface dielectrics to enable high hole selective passivating contacts. It is demonstrated that deposited via direct plasma enhanced chemical vapour deposition can be grown controllably...
The unambiguous detection of hydrogen in solar cell contact structures is critical to understanding passivation and degradation phenomena. Deuterium often used depict the distribution more clearly. However, experimental noise artifacts can hinder clear identification species. This work provides a report time-of-flight elastic recoil (ToF-ERD) analysis identify H/D contents thin poly-Si/SiOx passivating contact. structure contained 1.3 nm interfacial SiOx an n+ doped poly-Si layer with partly...
Minimising charge losses at silicon interfaces is a major development area for highly efficient solar cells. Here we report on the interface improvements achieved by establishing surface electric field during low-temperature firing of dielectric thin films. By inducing corona film stack, observe significant modifications to silicon-dielectric upon annealing, which correlate with characteristics defects. The passivation properties strongly depend polarity and strength firing, as well...
A highly efficient hole-selective passivating contact remains the crucial step required to increase efficiency of polysilicon-based Si solar cells. The future development modules depends on a device structure that can complement electron-selective tunnel oxide with an equivalent contact. We investigate plasma enhanced chemical vapor deposited (PECVD) SiN
Abstract The power conversion efficiency of solar cells is strongly impacted by an unwanted loss charge carriers occurring at semiconductor surfaces and interfaces. Here the use ion‐charged oxide nanolayers to enhance passivation silicon via field effect mechanism reported. first report enhanced from rubidium cesium provided. state formation energy dioxide are calculated principles. Ion embedding demonstrated exploited control interface population minimize electron‐hole pair recombination....
Abstract Subdivision surfaces have been widely used in computer graphics. They are also commonly to subdivide 3D geological modeling. The classic triangular mesh subdivision algorithms Loop algorithm, Sqrt3 algorithm and Butterfly algorithm. Based on the realization of three algorithms, paper displays that improved compared with can alleviate contradiction between data volume smoothness. It achieve a better fittness, deal smooth model well modeling other applications.