A5048390993- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Nanowire Synthesis and Applications
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- ZnO doping and properties
- solar cell performance optimization
- Electrostatic Discharge in Electronics
- Terahertz technology and applications
- Luminescence Properties of Advanced Materials
- Silicon Carbide Semiconductor Technologies
UNSW Sydney
2024-2025
University of Oxford
2020-2024
University of Southampton
2020
Aluminium-doped ZnO deposited by ALD provides transparency, conductivity, and c-Si passivation for high-efficiency solar cells, reducing the need indium-based TCOs. Precise Zn/Al control enables with J 0 < 1 fA cm −2 740 mV iV OC .
Passivating contacts, featuring dual functions of defect passivation at the semiconductor surface and extracting one type charge carrier, are recognized as key enabler in achieving high-efficiency Si solar cells. In particular, a dopant-free full-area passivating hole contact is critical to replace conventional rear structure that features partial Si-metal design with insulator interlayers. Herein, titanium oxide (TiOx) nanolayers (∼5 nm) grown by atomic layer deposition over full area...
Fully exploiting the power conversion efficiency limit of silicon solar cells requires use passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective contact remains one key challenges for this technology to be deployed industrially and pave way adoption in tandem configurations. Here, we report first account nitride (SiNx) nanolayers with electronic properties suitable effective contacts. We x-ray photoemission methods investigate...
Highly passivating, hole selective contacts are required for future high efficiency silicon solar cells. This work investigates selected dielectrics as potential SiOx replacements to act contacts. AlOx and SiNx were identified good candidates due their low valence band offsets proven surface passivation capabilities. Simulated J-V curves show maintain acceptable contact resistivities at thicknesses below 1.4 1.7 nm, respectively. The was found become extremely resistive even <1 suggesting...
The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source efficiency loss in photovoltaic cells. Here, we present SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> and AlO nanolayers as promising interface dielectrics to enable high hole selective passivating contacts. It is demonstrated that deposited via direct plasma enhanced chemical vapour deposition can be grown controllably...
The production and performance of p‐type inversion layer (IL) Si solar cells, manufactured with an ion‐injection technique that produces a highly charged dielectric nanolayer, are investigated. It is demonstrated the field‐induced electron underneath can reach dark sheet resistance 0.95 kΩ sq −1 on 1 Ω cm n‐type substrate, lower than any previously reported. In addition, it shown implied open‐circuit voltage IL cell precursor equivalent to phosphorous emitter. precursor, light‐beam‐induced...
Dielectric thin films are a fundamental part of solid-state devices providing the means for advanced structures and enhanced operation. Charged dielectrics particular kind in which embedded charge is used to create static electric field can add functionality improve performance adjacent electronic materials. To date, concentration has been limited intrinsic defects present after dielectric synthesis, unstable corona charging, or complex implantation processes. While such charging mechanisms...
Silicon solar cells are approaching their efficiency limit of 29% under the standard spectrum. In order to surpass this limit, a device is required that better manages energy in each incoming packet (photon). One approach end split higher photons two, such two electron-hole pairs can be generated by one photon. This strategy has an upper 45.9%. Organic Multiple Exciton Generation (OMEG) executed photophysical process called singlet fission. A spin-0 (singlet) exciton photon, and it decays...
A highly efficient hole-selective passivating contact remains the crucial step required to increase efficiency of polysilicon-based Si solar cells. The future development modules depends on a device structure that can complement electron-selective tunnel oxide with an equivalent contact. We investigate plasma enhanced chemical vapor deposited (PECVD) SiN
Abstract High‐efficiency solar cells require two contact structures, engineered for efficient extraction of photogenerated holes and electrons at the respective electrodes. Herein, crystalline Si cell featuring hole‐ electron‐selective passivating contacts composed entirely a single material, amorphous titanium oxide (TiO x ), without extrinsic doping is demonstrated. The hole/electron selectivity TiO layers (≈5 nm) tailored by oxidation process choice Ti precursor in atomic layer deposition...
Abstract The power conversion efficiency of solar cells is strongly impacted by an unwanted loss charge carriers occurring at semiconductor surfaces and interfaces. Here the use ion‐charged oxide nanolayers to enhance passivation silicon via field effect mechanism reported. first report enhanced from rubidium cesium provided. state formation energy dioxide are calculated principles. Ion embedding demonstrated exploited control interface population minimize electron‐hole pair recombination....
In this work it is demonstrated that the presence of surface electric fields during a post-deposition anneal can impact chemical passivation SiO2 + SiNx double layer stacks. Although generated in such dielectrics well known, we demonstrate an field present dielectric not only modifies carrier concentration but also induce change interface properties upon annealing. By tailoring stack prior to annealing, shown capture rates at Si-SiO2 be modified depending on polarity and magnitude. Planar FZ...
In this work, we report a new approach to characterise interface state density (Dit) near the band edges.Interface defect states are known trap charge carriers via SRH statistics.At dielectric-silicon interfaces in dielectric layer is neutralised by of mirroring bulk Si, resulting an accumulation or inversion layer.Since increases exponentially towards edge, these can store large concentrations and alter carrier concentration at semiconductor surface.This dramatically influences operation...