We show that a strong tensile strain can be applied to germanium microdisks using silicon nitride stressors. The transferred allows one control the direct band gap emission is shifted from 1550 nm up 2000 nm, corresponding biaxial around 1%. Both Fabry-Perot and whispering gallery modes are evidenced by room temperature photoluminescence measurements. Quality factors 1350 limited free carrier absorption of doped layer observed for modes. discuss profile in as function disk geometry. These...

An all-around stressor approach is presented to introduce homogeneous and high tensile strain, both in-plane vertically, into n-doped germanium microdisks. A maximum biaxial strain up 1.5% achieved, close the requirement obtain a direct band gap germanium. The possibilities in this configuration modal optical gain microdisk cavities are discussed.

The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in study light emitters for silicon photonics. We discuss different approaches were implemented issues associated with show compact obtained processing into tensile-strained microdisks.

Germanium is an ideal candidate to achieve a monolithically integrated laser source on silicon. Unfortunately bulk germanium indirect band gap semiconductor. Here, we demonstrate that thick layer can be transformed from into direct semiconductor by using silicon nitride stressor layers. We 1.75% (1.67%) biaxial tensile strain in 6 (9) μm diameter microdisks as measured photoluminescence. The modeling of the photoluminescence amplitude vs temperature indicates zone-center Γ valley has same...

We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection achieved with Schottky contacts on n-type doped germanium. show that a biaxial tensile-strain up to 0.72% can be by optimizing carrier profile. measured spectral red-shift and compared finite element modeling. discuss impact this level achieve population inversion in

We have investigated the optical properties of tensile-strained germanium grown on InGaAs buffer layers as a function film thickness and layer composition. study dependence photoluminescence strain amplitude degree relaxation which are also monitored by X-ray diffraction Raman spectroscopy. show that 0.75% biaxially strained can be obtained up to 150 nm, value sufficiently high allow confinement spontaneous emission in guiding structure. For large thicknesses (>200 nm) indium content...

We demonstrate the combination of germanium microdisks tensily strained by silicon nitride layers and circular Bragg reflectors. The with suspended lateral reflectors form a cavity quality factors up to 2000 around 2 μm. This represents key feature achieve microlaser quasi-direct band gap under 1.6% biaxial tensile strain. show that lowering temperature significantly improves factor quasi-radial modes. Linewidth narrowing is observed in range weak continuous wave excitation powers. finally...

Optical phase errors are inherent to practical waveguides and will degrade the beam quality of optical phased arrays. This paper demonstrates a scalable approach on-chip calibration arrays using compact interrogator structure. is designed for with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$2.5 \,{\mu }\mathrm{m}$</tex-math></inline-formula> pitch demonstrated in 64-channel array realized Si/SiN...

We design and demonstrate a thin-film z-cut Lithium Niobate photonic platform. report experimental transmission measurement of different passive building blocks at 1.55 μm central wavelength including AWG MMI splitter.

We demonstrate a chip-scale germanium-silicon optical phased array (OPA) fabricated on CMOS-compatible platform capable of 2D beam steering in the mid-infrared wavelength range. The OPA included specially designed grating emitter waveguide with uniform emission intensity along mm-length propagation to realize very sharp instantaneous field-of-view (IFOV) and wide beam-steering total-field-of-view (TFOV). experimental results indicated lateral TFOV up 12.7° by phase-tuning longitudinal 12°...

The optical emission of germanium-based luminescent and/or laser devices can be enhanced by tensile strain and n-type doping. In this work, we study simulation the interplay between electrical transport gain in highly n-doped intrinsic germanium p-n heterostructure diodes under strain. effects doping on carrier mobilities energy distribution are taken into account. Whereas n-doping Ge enhances filling indirect L Brillouin zone-center conduction band states, also reduces injection efficiency,...

Correcting phase errors is key to building low cost, high performance integrated optical phased arrays for mass-market applications such as automotive lidar. In this work, we present a interrogator component which enables the error be measured immediately before output array of emitters. A 32-element silicon/silicon nitride realized in dual layer photonics stack verify performance. Silicon density integration photonic components and has compact design fits between waveguides with separation...

Optical phased arrays (OPAs) with phase-monitoring and phase-control capabilities are necessary for robust accurate beamforming applications. This paper demonstrates an on-chip integrated phase calibration system where compact interrogator structures readout photodiodes implemented within the OPA architecture. enables phase-error correction high-fidelity beam-steering linear complexity calibration. A 32-channel 2.5-µm pitch is fabricated in Si-SiN photonic stack. The done silicon...

n-doped germanium can be used as an active material for the realization of optical source under electrical pumping. We propose to use Schottky contacts electroluminescent devices, and we show that carrier injection electroluminescence in these devices optimized by depositing a thin Al2O3 interfacial layer on top germanium. In latter case, hole is due drastic decrease interface trap densities room-temperature observed at small current with higher differential efficiency compared standard sample.

The keystone to realize a monolithic integrated source on silicon with germanium is optimize tensile strain and n-doping. In order an compact source, we demonstrate highly strained n-doped microdisks obtained by two approaches using initially compressed nitride (SiN) deposition. the first approach, are fabricated from relaxed Ge. second use tensile-strained Ge grown mismatched buffer layer, thus increasing global in volume lowering its gradient. A photoluminescence red-shift up 450 nm...

Room temperature optical gain and lasing have been recently demonstrated in germanium. One key ingredient to obtain positive is reduce the splitting between conduction indirect direct valleys by introducing tensile strain. We investigated two distinct approaches apply a large strain The first approach relies on growth of germanium InGaAs buffer templates. Biaxial strains up 0.8% achieved this method. second stress transfer through silicon nitride layers. It offers advantage full...

All-silicon highly-doped PN junction-based photodetectors, for photonic integrated circuit (PIC) calibration and power monitoring, are designed fabricated in the C-band. The photodetector response is measured different doping conditions. photodetectors with an interferometric based phase-interrogator structure a test circuit. devices show high responsivity (12 A/W) obtained under avalanche condition at 5.7 V reverse bias reasonable dark current ( <inline-formula...

The main hindrance to optical imaging at elevated depths is the scattering of light exhibited by biological tissues. Consequently, various wavefront shaping techniques have been developed in order achieve focusing media. In our compensation experiments, spatial modulator replaced a novel integrated photonics-based shaper. We work on through static scatterer using near-infrared light. photonic circuit (PIC) used this research consists 1D array emitters with independently controlled phases....

A very high-speed and low-power 1024/spl times/1 SRAM has been designed fabricated using a normally-off recessed-gate FET technology. Minimum gate length is 0.7 /spl mu/m. minimum access time of 1.4 ns obtained with power dissipation 210 mW. The memory cell area 1197 mu/m/SUP 2/ the chip size 1.91/spl times/2.21 mm/SUP 2/. output voltage swing across 50-/spl Omega/ load 700 mV. maximum simulated yield for 1 K SRAMs discussed theoretically. mean standard deviation in threshold less than 15 mV...