A5020950329- Radio Frequency Integrated Circuit Design
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Terahertz technology and applications
- Microwave Engineering and Waveguides
- 3D IC and TSV technologies
- Semiconductor Lasers and Optical Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Microwave and Dielectric Measurement Techniques
- Thin-Film Transistor Technologies
- Superconducting and THz Device Technology
- GaN-based semiconductor devices and materials
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Photonic Crystals and Applications
- Antenna Design and Analysis
- Electromagnetic Compatibility and Noise Suppression
- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Plasmonic and Surface Plasmon Research
Centre National de la Recherche Scientifique
2013-2025
Centre de Nanosciences et de Nanotechnologies
2017-2025
Université Paris-Saclay
2019-2025
Université Paris-Sud
2011-2020
STMicroelectronics (France)
2005-2007
South University
2003
Using high bandwidth resistance measurements, we study the single-shot response of tunnel junctions subjected to spin torque pulses. After pulse onset, switching proceeds by a ns-scale incubation delay during which is quiet, followed 400 ps transition terminated large ringing that damped progressively. While fluctuates significantly, traces are reproducible once this passed. switching, time-resolved indicate micromagnetic configurations rather spatially coherent.
This paper presents a compact on-chip multiple-input multiple-output (MIMO) antenna designed for future communication systems, featuring frequency-agile elements. The achieves enhanced decoupling and reduced cross-section through the integration of metasurface, which also introduces frequency agility. Designed millimeter-wave band using low-loss BenzoCycloButene (BCB) polymer, is manufactured with microelectronic processes, dimensions are 7.54 × 0.055 mm3. Simulations measurements...
This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for 90-nm BiCMOS technology. The technical choices such as the selective epitaxial growth of base and use an arsenic-doped monocrystalline emitter are presented discussed with respect to performance objectives integration constraints. DC high-frequency device performances at room cryogenic temperatures given. HICUM model agreement measurements is also discussed. Finally, building blocks...
We report the generation of continuous terahertz waves from microwave frequencies up to 2THz obtained by photomixing two optical at 1.55μm wavelengths in ion-irradiated In0.53Ga0.47As interdigitated photomixers. A 200nm thick silicon nitride coating is used for antireflection and passivation layer, improving reliability heat tolerance photomixer. In such devices, output powers greater than 40nW 0.5THz 10nW 1THz have been achieved. Considering observed saturation power with increase bias...
We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around point contact in spin-valves. Theory predicts frequency-tuning by currents occurs at constant orbital radius, so an exceptional is anticipated. To test this, we have inserted oscillator microwave interferometer to apply abrupt current variations while time resolving its emission. Using frequency shift keying, show that can switch between two stabilized frequencies differing 25% less than ten...
Germanium is a promising material for electrically pumped light emitters integrated on silicon. In this work, we have investigated the room temperature electroluminescence of pure germanium diodes grown by metal organic chemical vapor deposition. The dependence optical response p-n studied as function injected current. Both direct and indirect band gap recombinations are observed at around 1.6 1.8 μm. amplitude recombination equivalent to one gap.
We have investigated the quality factors of silicon-based photonic crystal nanocavities using photoluminescence a single layer Ge/Si self-assembled islands as an internal source. focus on membrane-type L3 elongated cavities with or without their lateral edge air holes shifted in position. The measurements are performed at room temperature. show that factor fundamental mode observed normalized frequency u = a/lambda~_ 0.25 is strongly dependent incident pump power. This dependence associated...
We report room temperature electroluminescence of tensile-strained germanium microdisks. The strain is transferred into the microdisks using silicon nitride stressors. Carrier injection achieved with Schottky contacts on n-type doped germanium. show that a biaxial tensile-strain up to 0.72% can be by optimizing carrier profile. measured spectral red-shift and compared finite element modeling. discuss impact this level achieve population inversion in
This paper presents the status of high-speed SiGe BiCMOS technologies at STMicroelectronics. Process and electrical characteristics two 120-nm platforms, qualified or under development, are presented together with results demonstrated on optical millimeter-wave circuits. Advanced developments addressing end-of-roadmap also discussed.
We demonstrate subwavelength electromagnetic resonators operating in the THz spectral range, whose properties and spatial/angular patterns can be engineered a similar way to an electronic circuit. discuss device concept, we experimentally study tuning of resonant frequency as function variable capacitances inductances. then elucidate optical coupling properties. The radiation pattern, obtained by angle-resolved reflectance, reveals that system mainly couples outside world via magnetic...
This paper describes a 230 GHz self-aligned SiGeC HBT featuring selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented discussed with respect to BiCMOS performance objectives integration constraints.
We present a detailed study of the effect carrier lifetime on terahertz signal characteristics emitted by Br(+)-irradiated In(0.53)Ga(0.47)As photoconductive antennas excited 1550 nm wavelength femtosecond optical pulses. The temporal waveforms and average radiated powers for various lifetimes are experimentally analyzed compared to predictions analytical models charge transport. Improvements in bandwidth power radiation observed with decrease emitter. ion-irradiated pulses is measured be...
A low temperature dc and HF investigation of 0.25 /spl mu/m T-gate Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's is presented. Outstanding maximum oscillation frequencies f/sub max/ range from 100-120 GHz at 300 K up to 195 50 K. These high-frequency characteristics are the first reported on Si/SiGe also highest room data so far; physical modeling used explain main trends observed when cooling down n-MODFET. Many experimental The dependence biases important small-signal equivalent circuit...
A current gain cutoff frequency fT of 508 GHz is reported for a SiGe heterojunction bipolar transistor (HBT) operating at 40 K. This 63% increase over the 311 value measured room temperature results from overall decrease transit and charging times. Two HBTs are compared to highlight importance topology HBT reach maximum performances.
This paper presents the results of investigations on process thermal budget reduction in order to increase operation frequency SiGe HBTs. We describe variations DC and AC characteristics devices with spike annealing temperature. Record peak f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> values 410 GHz 640 are reported at room cryogenic temperatures respectively.
The transit times analysis, at room and cryogenic temperatures, of SiGe HBTs featuring various f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tau</sub> /f xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> trade-offs is performed. It allows to identify the principal development axes reach half-terahertz 300 K, a frequency already obtained 40 K.
The optical emission of germanium-based luminescent and/or laser devices can be enhanced by tensile strain and n-type doping. In this work, we study simulation the interplay between electrical transport gain in highly n-doped intrinsic germanium p-n heterostructure diodes under strain. effects doping on carrier mobilities energy distribution are taken into account. Whereas n-doping Ge enhances filling indirect L Brillouin zone-center conduction band states, also reduces injection efficiency,...
A comparison of electrical performances state-of-the-art SiGe heterojunction bipolar transistors at low temperature is presented. The increase results from the diminution transit times thanks to rise non-stationary transport, relative transconductance with reduction self-heating effects, and decrease access resistances.