Lianjun Hu

ORCID: 0000-0001-5463-2685
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Research Areas
  • Advanced Surface Polishing Techniques
  • Corrosion Behavior and Inhibition
  • Advanced materials and composites
  • Semiconductor materials and devices
  • Metal Extraction and Bioleaching
  • Electrodeposition and Electroless Coatings
  • Fire dynamics and safety research
  • Electronic and Structural Properties of Oxides
  • Spectroscopy and Chemometric Analyses
  • Anodic Oxide Films and Nanostructures
  • Advanced DC-DC Converters
  • Video Surveillance and Tracking Methods
  • Smart Agriculture and AI
  • Fire Detection and Safety Systems
  • Integrated Circuits and Semiconductor Failure Analysis
  • Diamond and Carbon-based Materials Research
  • Concrete Corrosion and Durability
  • Advanced Battery Technologies Research
  • Advanced Machining and Optimization Techniques
  • Multilevel Inverters and Converters
  • Remote Sensing and Land Use
  • Copper Interconnects and Reliability
  • Synthesis of Tetrazole Derivatives
  • Metal and Thin Film Mechanics
  • Molecular Junctions and Nanostructures

Tianjin University of Commerce
2022-2024

Hebei University of Technology
2019-2022

Tianjin University of Technology
2019-2022

Octyl hydroxamic acid (OHA) was investigated as an inhibitor in H2O2-based alkaline silica dispersions for the polishing of cobalt (Co) films interconnect applications. A combination experiments and density functional theory (DFT) used to investigate inhibition effect mechanism OHA on Co surface. On basis experiments, it can be proven that has Co, which came from cathodic reaction. The X-ray photoelectron spectroscopy (XPS) show adsorption weakened oxidation surface protected corrosion....

10.1021/acsami.2c02837 article EN ACS Applied Materials & Interfaces 2022-06-08

Inhibitors, as indispensable components in chemical mechanical polishing (CMP) slurries, have a significant impact on inhibiting copper (Cu) corrosion and enhancing post-polishing surface quality. However, one of the major challenges CMP lies unraveling microscopic inhibition mechanism Cu. This work focuses investigating an inhibitor, salicylhydroxamic acid (SHA), static etching rate (SER), electrochemical parameters, morphology The experimental findings demonstrate that SHA significantly...

10.1149/2162-8777/ad7b76 article EN publisher-specific-oa ECS Journal of Solid State Science and Technology 2024-09-02

As an inhibitor for copper (Cu), Octyl hydroxamic acid (OHA) has been extensively studied through a combination of density functional theory (DFT) and experiments. Our findings indicate that using concentration 3 mM OHA as can lead to remarkable removal rate (RR) surface quality when the pH is at 10. Tafel analysis potentiodynamic polarization plots was performed demonstrate lower corrosion current. Further insight into adsorption behavior on Cu obtained comprehensive study combining X-ray...

10.1149/2162-8777/acd722 article EN ECS Journal of Solid State Science and Technology 2023-05-01

With the change in consumers' consumption concepts, traditional marine brand image lacks professionalism and diversity new media environment, which is not line with characteristics of information dissemination.The development computer-aided design technology multimedia broadens ideas for optimization.Therefore, this paper constructs a perception model based on network text mining to understand emotional corporate from multiple aspects.The optimization realized through an intelligent...

10.14733/cadaps.2024.s25.156-170 article EN Computer-Aided Design and Applications 2024-04-04

A geometric structure model method has been proposed to provide more non-isolated step-up DC-DC converters and improve the existing topology derivation methods. Based on three converters, a is constructed. According different connection relationships components represented in model, ten new high converter topologies are derived. group of consisting four taken as an example, superior converter, namely high-boost switching inductor denoted HB-SL obtained through characteristic comparison....

10.1587/elex.20.20230487 article EN IEICE Electronics Express 2023-11-29

As the technology node shrinks to 14 nm, Co has been widely used as a liner in semiconductor devices. However, dishing and erosion produced after fine polishing seriously affect RC delay of device, so achieving reasonable Cu/Co/TEOS removal rate (RR) selectivity is key correct erosion. In this paper, effect 2-hydroxyphosphonoacetic Acid (HPAA) complexing agent on RR H 2 O based alkaline slurries was well investigated. addition, complexation mechanism between HPAA analyzed through...

10.1149/2162-8777/ac3444 article EN ECS Journal of Solid State Science and Technology 2021-10-28
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