A5031212589- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Industrial Technology and Control Systems
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Advanced Sensor and Control Systems
- Industrial Automation and Control Systems
- Simulation and Modeling Applications
- Advanced Computational Techniques and Applications
- Particle accelerators and beam dynamics
- Magnetic Properties and Applications
- Gas Sensing Nanomaterials and Sensors
- Particle Accelerators and Free-Electron Lasers
- Advanced Algorithms and Applications
- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Manufacturing Process and Optimization
- Advanced Vision and Imaging
- Elevator Systems and Control
- Advanced MRI Techniques and Applications
- Semiconductor materials and interfaces
- Industrial Vision Systems and Defect Detection
- Advanced Measurement and Detection Methods
Delft University of Technology
2023-2024
Shenzhen University
2024
Zhejiang University
2019-2023
IMEC
2023
Wuhan Ship Development & Design Institute
2022
Xi'an University of Architecture and Technology
2008-2019
Xi’an University of Posts and Telecommunications
2012-2019
Taiyuan Heavy Industry (China)
2012
Switch
2011
Xinyang Normal University
2011
In order to solve the problems associated with organization of dynamic facility layout in a manufacturing workshop, utilizing chaotic generic algorithm improved Tent mapping is proposed as solution. The tent map used generate initial population which distributed throughout solution space. Excellent individuals have Genetic Algorithm optimization elitist strategy applied them. Partially matched crossover and mutation operations for single-period-layout encoding string are executed, adaptive...
Abstract The performance enhancement of conventional Si MOSFETs through device scaling is becoming increasingly difficult. application high mobility channel materials one the most promising solutions to overcome bottleneck. Ge and GeSn channels attract a lot interest as alternative materials, not only because carrier but also superior compatibility with typical CMOS technology. In this paper, recent progress has been investigated, providing feasible approaches improve devices for future technologies.
Quasi-arrayed ZnMgO single-crystal nanorods with different Mg concentrations have been fabricated by thermal evaporation of Zn and on a Si substrate using Au as catalyst. The synthesized had uniform flat hexagonal crystallorgraphic planes diameters about 300 nm. It was found that the increase in dopant concentration, peak position (0 0 2) shifted towards high-angle side (from 34.40° to 34. 54°) near-band-edge emission blue-shifted 364 nm (3.41 eV) from 385 (3.22 comparison pure ZnO. direct...
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that permanent and recoverable defects are generated simultaneously during NBTI stress Ge-OI lower confirmed pMOSFETs with a thinner channel, due to reduction band bending Ev under fixed electrical field stress. Thus, scaling could be an effective method improve reliability
The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling manufacturing defects the tunnel junction (MTJ) is crucial. This paper introduces characterizes a new defect called Back-Hopping (BH); it also provides its fault models solutions. BH causes MTJ state to oscillate during write operations, leading failures. characterization carried out based on manufactured devices. Due observed...
Many companies are heavily investing in the commercialization of Resistive Random Access Memories (RRAMs). This calls for a comprehensive understanding manufacturing defects to develop efficient and high-quality test diagnosis solutions push high-volume production. paper identifies characterizes new defect based on silicon measurements; is called Ion Depletion (ID). In our case study, 45% cycles suffered from an intermittent reduction high resistance state did not impact low state. The shows...
The impact of electrical stress on the defect generation behaviors in thin GeO2/n-Ge gate stacks has been investigated through measurement time-dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) characteristics. A multiple-spot (BD) event is confirmed, as well a larger SILC probability compared with that SiO2/Si structures. It found slow trap dominant by amount injected electron fluence ( ${Q} _{{\text {inj}}}$ ), fix charge attributed to both GeO2 thickness.
The basic principles of IF/THEN rules in rough set theory are analyzed first, and then the automatic process knowledge acquisition is given. numerical data qualitatively processed by classification membership functions degrees to get normative decision table. regular method relations reduction algorithm attributes studied. reduced presented multi-represent-value its offered. whole has high degree automation extracted true reliable.
Guaranteeing high-quality test solutions for Spin-Transfer Torque Magnetic RAM (STT-MRAM) is a must to speed up its high-volume production. A high quality requires maximizing the fault coverage. Detecting permanent faults relatively simple compared intermittent faults; latter are (caused by non-environmental conditions) that appear and disappear as function of time, therefore hard detect. Testing such in STT-MRAMs even worse considering Tunneling Junction inherent property 'intrinsic...
Due to the immature manufacturing process, Resistive Random Access Memories (RRAMs) are prone exhibit new failure mechanisms and faults, which should be efficiently detected for high-volume production. Those unique faults hard detect but require specific Design-for-Test (DfT) circuit design. This paper proposes a DfT based on parallel-reference write that can all RRAM array during diagnosis, production testing, its application in field.
The preclinical stage of Alzheimer's Disease (AD) holds great potential for intervention, therefore, it is crucial to elucidate the neural mechanisms underlying progression subjective cognitive decline (SCD). Previous studies have predominantly focused on changes in cerebrum associated with SCD, but relatively neglected cerebellum, and functional relationship between cerebellum cerebrum. In current study, we employed dynamic connectivity large-scale brain network approaches investigate...
The thermal stability has been investigated for the NiGe-n-Ge junctions with and without dopant segregation (DS). It is found that B DS sufficiently improves tolerance of junctions, can be stabilized up to 550 °C. This phenomenon suggests NiGe metal source/drain (S/D) a feasible structure broadening processing window future high-performance Ge MOSFETs.
Resistive Random Access Memory (RRAM) is a potential technology to replace conventional memories by providing low power consumption and high-density storage. As various manufacturing vendors make significant efforts push it high-volume production commercialization, high-quality efficient test solutions are of great importance. This paper analyzes interconnect contact defects in RRAMs, while considering the impact memory Data Background (DB), proposes solutions. The complete defect space...
Resistive Random Access Memories (RRAMs) are being commercialized with significant investment from several semiconductor companies. In order to provide efficient and high-quality test solutions push high-volume production, a comprehensive understanding of manufacturing defects is significantly required. This paper identifies characterizes the over-RESET phenomenon based on silicon measurements. our case study, 30% cycles suffered intermittent extremely high resistance state exceeding...
Spin-Transfer Torque Magnetic RAMs (STT-MRAMs) are on their way to commercialization. However, obtaining high-quality test and diagnosis solutions for STT-MRAMs is challenging due the existence of unique defects in Tunneling Junctions (MTJs). Recently, Device-Aware Test (DA-Test) method has been put forward as an effective approach mainly detecting defecting STT-MRAMs. In this study, we propose a further advancement based DA-Test framework, introducing Diagnosis (DA-Diagnosis) method. This...