A5021117603- Nuclear physics research studies
- ZnO doping and properties
- Magnetic Properties of Alloys
- Nuclear Physics and Applications
- Magnetic properties of thin films
- Gas Sensing Nanomaterials and Sensors
- Rare-earth and actinide compounds
- Physics of Superconductivity and Magnetism
- Ion-surface interactions and analysis
- Diamond and Carbon-based Materials Research
- Atomic and Subatomic Physics Research
- Thin-Film Transistor Technologies
- Atomic and Molecular Physics
- Hydrogen Storage and Materials
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Advanced NMR Techniques and Applications
- Electronic and Structural Properties of Oxides
- Carbon Nanotubes in Composites
- Quantum, superfluid, helium dynamics
- Metal and Thin Film Mechanics
- Multiferroics and related materials
- Laser-induced spectroscopy and plasma
- Metallurgical and Alloy Processes
- Quantum Chromodynamics and Particle Interactions
Hyogo Prefectural Institute of Technology
2012-2024
Osaka University
1999-2015
Tokyo Institute of Technology
1995-2003
Chitose Institute of Science and Technology
2002
University of Göttingen
1998
International Superconductivity Technology Center
1990-1992
The relation between electrical and structural properties of indium tin oxide (ITO) films prepared by pulsed laser deposition with without in situ irradiation is examined. residual stresses the were estimated from x-ray diffraction patterns measured grazing-incidence asymmetric Bragg geometries. For irradiation, stress depended on oxygen pressure (PO2) during had minimum around PO2 1.3 Pa, which coincided optimum for growing lowest resistivity films. was only slightly improved an increase...
Rutile-type wide and ultrawide band-gap oxide semiconductors are emerging materials for high-power electronics deep ultraviolet optoelectronics applications. A rutile-type GeO2-SnO2 alloy (r-GexSn1–xO2) recently found is one of such materials. Herein, we report low-temperature electron transport properties r-GexSn1−xO2 thin films with x = 0.28 0.41. Based on resistivity magnetoresistance measurements, along the theory quantum interference, it suggested that Efros–Shklovskii variable-range...
Direct observation of ions in the laser plume YBa2Cu3O7−δ was carried out by time-of-flight mass spectroscopy. The direct species impinging onto substrate is very important order to clarify kinetics film formation, so ion sampling done through orifice set at position substrate. Thus results indicate directly incident during deposition. analysis energies also out. Atomic, monoxide, and cluster were observed their determined be around 200, several tens a few eV, respectively.
Substrate bias voltages were found to be significantly effective in preparing high-quality laser-deposited superconducting Ba2Y1Cu3O7−δ films at reduced substrate temperatures. The zero-resistance temperature of the biased films, positive being more than negative, decreased very slightly when was lowered, whereas that unbiased considerably. In addition, surface morphology and c-axis orientation have been improved by applying voltages. Bias within ±500 V hardly affect composition resulting so...
Pure indium oxide (In2O3) and SnO2-doped In2O3 (5 10 wt %) films were deposited on glass at different substrate temperatures (Ts) ranging from room temperature (RT=25 °C) to 350 °C using pulsed laser deposition. At low Ts (RT 100 °C), pure yielded the lowest resistivity of (1.8–2.5)×10−4 Ω cm increased sharply with an increase in Ts, rise resulted mainly a decrease carrier concentration Hall mobility. For films, decreased 3.5×10−4 1.3×10−4 increasing RT reduction is associated thermal...
Indium tin oxide (ITO) thin films were grown on SiO 2 glass and silicon (Si) substrates from a 95 wt% In O 3 –5 SnO sintered ceramic target by pulsed laser deposition (PLD). The deposited under different oxygen pressures ( P o2 ) of 5×10 -3 to -2 Torr at room temperature (RT) 200°C. was found have critical influence the optical electrical properties ITO films. Under 1×10 Torr, with resistivity as low 4.5×10 -4 1.8×10 Ωcm obtained RT 200°C, respectively. Moreover, increasing substrate T s...
Excited states in ${}^{17}$C were investigated through the measurement of $\ensuremath{\beta}$-delayed neutrons and $\ensuremath{\gamma}$ rays emitted $\ensuremath{\beta}$ decay ${}^{17}$B. In measurement, three negative-parity two inconclusive identified above neutron threshold energy, seven lines a multiple emission ${}^{17}$B decay. From these transitions, $\ensuremath{\beta}$-decay scheme was determined. particular, de-excitation 1766-keV line from first excited state ${}^{16}$C observed...
The electric quadrupole moment Q for the ground state of ${}^{17}\mathrm{B}$ was determined by $\ensuremath{\beta}$-NMR method applied to spin-polarized projectile fragments. From measured coupling constant, $|{eqQ/h(}^{17}\mathrm{B}\mathrm{in}\mathrm{}\mathrm{Mg})|=137.4\ifmmode\pm\else\textpm\fi{}4.5\mathrm{kHz},$ in a Mg single crystal stopper deduced as $|{Q(}^{17}\mathrm{B})|=38.6\ifmmode\pm\else\textpm\fi{}1.5\mathrm{mb}.$ As case previous ${}^{15}\mathrm{B}$ result, obtained is very...
The magnetic moments of $^{17}\mathrm{N}$ and $^{17}\mathrm{B}$ were measured by using spin-polarized radioactive nuclear beams which obtained from the projectile fragmentation reaction. observed moment $^{17}\mathrm{N}$, \ensuremath{\Vert}\ensuremath{\mu}${(}^{17}$N)\ensuremath{\Vert}=(0.352\ifmmode\pm\else\textpm\fi{}0.002)${\mathrm{\ensuremath{\mu}}}_{\mathit{N}}$, where ${\mathrm{\ensuremath{\mu}}}_{\mathit{N}}$ is magneton, falls outside Schmidt lines. By virtue a simplifying feature...
Low-resistivity (ρ) and highly transparent pure indium oxide (In2O3) thin films grown on glass substrates by pulsed laser deposition at substrate temperature (Ts) between room 200 °C are reported. As-deposited with resistivity of ∼3×10−4 Ω cm transmittance (visible), above 87% were obtained within a narrow range PO2 (1×10−2–1.5×10−2 Torr). Hall effect measurements showed that the low ρ resulted from high carrier concentration (n)∼7×1020 cm−3, whereas modest mobility (μ<45 cm2 V−1 s−1)...
The longitudinal electronic spin relaxation time of Cs atoms optically polarized in superfluid helium (He II, 1.5 K) has been measured with special care to cope a serious decrease the number observation region. This decrease, mainly caused by convection introducing into He II laser sputtering, was significantly reduced using new atom implantation method. Combined careful correction for atoms, we have determined be 2.24(19) s or longer, roughly twice as long that solid He.
Abstract We report on the control of carrier density in r-SnO 2 thin films grown isostructural r-TiO substrates by doping with Sb aiming for power-electronics applications. The was tuned within a range 3 × 10 16 –2 19 cm −3 . Two types donors different activation energies, attributed to at Sn sites and oxygen vacancies, are present films. Both energies decrease as concentration increases. A vertical Schottky barrier diode employing Sb:r-SnO /Nb:r-TiO exhibits clear rectifying property...
Low-resistivity indium–tin–oxide (ITO) films (8.9×10−5–2.3×10−4 Ω cm), 80±20 nm thick grown by combining pulsed laser deposition and irradiation of the substrate were studied in relation to tin (Sn) doping content. Films with Sn content over range 0–10 wt % deposited at room temperature (RT) 200 °C a fixed oxygen pressure 1×10−2 Torr. The beam energy density 70 mJ/cm2 was directed middle portion during growth. At RT, laser-irradiated nonirradiated parts exhibited crystalline amorphous phase,...