Hideki Yoshioka

ORCID: 0000-0002-1949-4309
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About
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Research Areas
  • Advancements in Solid Oxide Fuel Cells
  • ZnO doping and properties
  • Electronic and Structural Properties of Oxides
  • Gas Sensing Nanomaterials and Sensors
  • Magnetic and transport properties of perovskites and related materials
  • Ferroelectric and Piezoelectric Materials
  • Microwave Dielectric Ceramics Synthesis
  • Catalysis and Oxidation Reactions
  • Thermal Expansion and Ionic Conductivity
  • Ion-surface interactions and analysis
  • Thin-Film Transistor Technologies
  • Nuclear materials and radiation effects
  • Fuel Cells and Related Materials
  • Semiconductor materials and devices
  • Electrocatalysts for Energy Conversion
  • Inorganic Chemistry and Materials
  • Advanced Battery Materials and Technologies
  • Ionic liquids properties and applications
  • Photochemistry and Electron Transfer Studies
  • Rice Cultivation and Yield Improvement
  • Liquid Crystal Research Advancements
  • Diamond and Carbon-based Materials Research
  • Material Dynamics and Properties
  • Carbon Nanotubes in Composites
  • Glass properties and applications

Hyogo Prefectural Institute of Technology
2008-2020

Universiti Malaysia Perlis
2014

Tokyo Institute of Technology
1989-2009

Institute for Materials Research, Tohoku University
2008

National Institute for Materials Science
2008

Panasonic (Japan)
2004

Nagoya University
1996

Osaka University
1982-1994

Osaka Research Institute of Industrial Science and Technology
1994

Industrial Research Institute of Shizuoka Prefecture
1983-1989

Densities of coherent-scattering lengths in oxide-ion conductor La9.69(Si5.70Mg0.30)O26.24 with an apatite-type structure (space group P63/m) have been determined by a whole-pattern fitting approach based on the maximum-entropy method (MEM) using neutron powder diffraction data measured at 25 and 1558 °C. The Rietveld refinement suggested interstitial oxygen (O5) atom site (12i; x, y, z; x ≈ 0, y 0.22, z 0.65) periphery hexagonal axis. oxide ions located 2a (O4) 12i (O3) sites are largely...

10.1021/cm7035234 article EN Chemistry of Materials 2008-07-22

Phospholipase (PL) A2 is involved in signal transduction the resistance reaction that induced potato by inoculation of an incompatible race Phytophthora infestans, late blight fungus, or treatment with fungal elicitor hyphal wall components (Kawakita et al. 1993). In this study, PLA2 soluble fraction from tuber was purified. The following results suggested enzyme was, fact, patatin: (1) molecular mass purified 40 kDa, same as patatin; (2) pI approximately 4.75, which corresponds to and (3)...

10.1093/oxfordjournals.pcp.a028952 article EN Plant and Cell Physiology 1996-04-01

The oxide ion conductivity of apatite‐type lanthanum silicates has been enhanced by cation doping into both La and Si sites. Sr Nd fill vacancies on the site creating excess ions increasing conductivity. Al Mg, which substitute for at a fixed oxygen content, result in an enhancement conductivity, accompanied lattice enlargement. Mg‐doped silicate, 9.533 (Si 5.7 Mg 0.3 )O 26 , shown to have highest 4.4 × 10 −2 S/cm 800°C. conduction channel consists triangles O triangles, sizes calculated...

10.1111/j.1551-2916.2007.01862.x article EN Journal of the American Ceramic Society 2007-07-07

10.1016/j.jallcom.2004.12.180 article EN Journal of Alloys and Compounds 2005-07-12

The relation between electrical and structural properties of indium tin oxide (ITO) films prepared by pulsed laser deposition with without in situ irradiation is examined. residual stresses the were estimated from x-ray diffraction patterns measured grazing-incidence asymmetric Bragg geometries. For irradiation, stress depended on oxygen pressure (PO2) during had minimum around PO2 1.3 Pa, which coincided optimum for growing lowest resistivity films. was only slightly improved an increase...

10.1063/1.1427137 article EN Journal of Applied Physics 2002-02-01

Abstract Structure and ionic conductivity of Mg-doped La10Si6O27 was investigated on dense ceramic samples prepared from sol–gel derived powders using two step sintering process. The increased by the doping (from 22 to 30–39 mS cm−1 at 800 °C) because expansion apatite lattice.

10.1246/cl.2004.392 article EN Chemistry Letters 2004-03-01

Pure indium oxide (In2O3) and SnO2-doped In2O3 (5 10 wt %) films were deposited on glass at different substrate temperatures (Ts) ranging from room temperature (RT=25 °C) to 350 °C using pulsed laser deposition. At low Ts (RT 100 °C), pure yielded the lowest resistivity of (1.8–2.5)×10−4 Ω cm increased sharply with an increase in Ts, rise resulted mainly a decrease carrier concentration Hall mobility. For films, decreased 3.5×10−4 1.3×10−4 increasing RT reduction is associated thermal...

10.1116/1.582260 article EN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2000-05-01

Indium tin oxide (ITO) thin films were grown on SiO 2 glass and silicon (Si) substrates from a 95 wt% In O 3 –5 SnO sintered ceramic target by pulsed laser deposition (PLD). The deposited under different oxygen pressures ( P o2 ) of 5×10 -3 to -2 Torr at room temperature (RT) 200°C. was found have critical influence the optical electrical properties ITO films. Under 1×10 Torr, with resistivity as low 4.5×10 -4 1.8×10 Ωcm obtained RT 200°C, respectively. Moreover, increasing substrate T s...

10.1143/jjap.38.2710 article EN Japanese Journal of Applied Physics 1999-05-01

Low-resistivity (ρ) and highly transparent pure indium oxide (In2O3) thin films grown on glass substrates by pulsed laser deposition at substrate temperature (Ts) between room 200 °C are reported. As-deposited with resistivity of ∼3×10−4 Ω cm transmittance (visible), above 87% were obtained within a narrow range PO2 (1×10−2–1.5×10−2 Torr). Hall effect measurements showed that the low ρ resulted from high carrier concentration (n)∼7×1020 cm−3, whereas modest mobility (μ<45 cm2 V−1 s−1)...

10.1063/1.124064 article EN Applied Physics Letters 1999-05-17

Highly dense pellets of an oxygen excess-type lanthanum silicate (, 0.3, OE-LSO) were successfully fabricated, and their electrical conducting properties studied. The replacement Si by Al enhanced its conductivity, the slightly Al-doped OE-LSO specimen had excellent features as a solid electrolyte; that is, it high ionic conductivity was highly stable under reducing well oxidizing conditions at 873–1073 K. In addition, transference number higher than 0.99. fuel cell utilizing this...

10.1149/1.3464803 article EN Journal of The Electrochemical Society 2010-01-01

10.1023/a:1011224813782 article EN Journal of Materials Science Materials in Electronics 2001-01-01

Abstract The heat capacity of benzene-hexa-n-octanoate, C6(OCOC7H15)6, with a purity 99.77 mole per cent has been measured an adiabatic-type calorimeter in the range from 13 to 393 K. Three phase transitions were found at 301.89 (Phase II → I), 355.10 I columnar mesophase) and 357.09 K (columnar mesophase isotropic liquid). enthalpy entropy these 48.96 kJ mol−1/164.01 J K−1 mol−1, 46.07/129.81 19.22/53.77, respectively. infrared spectra recorded 4000−30 cm−1 showed drastic change between two...

10.1080/00268948208072130 article EN Molecular crystals and liquid crystals 1982-04-01
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