A5052350660- Antenna Design and Analysis
- Radio Frequency Integrated Circuit Design
- Energy Harvesting in Wireless Networks
- Microwave Engineering and Waveguides
- Terahertz technology and applications
- Wireless Body Area Networks
- Acoustic Wave Resonator Technologies
- Spectroscopy and Laser Applications
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Millimeter-Wave Propagation and Modeling
- Semiconductor materials and devices
- Advancements in PLL and VCO Technologies
- Advanced Power Amplifier Design
- Wind Turbine Control Systems
- Magnetic properties of thin films
- Real-time simulation and control systems
- Conducting polymers and applications
- Superconducting and THz Device Technology
- Semiconductor materials and interfaces
- Nanotechnology research and applications
- Semiconductor Lasers and Optical Devices
- Wireless Communication Networks Research
- Carbon Nanotubes in Composites
- GaN-based semiconductor devices and materials
Samsung (United States)
2018-2025
ABES Engineering College
2018-2024
Institute of Management Technology
2024
Research!America (United States)
2019-2023
Amity University
2023
Shobhit University
2021-2022
Rajasthan Technical University
2021-2022
The University of Texas at Dallas
2014-2020
Analog Devices (United States)
2016
Fairchild Semiconductor (United States)
1989
CMOS IC technology has become an affordable means for implementing capable systems operating at 300 GHz and above. circuits have been used to generate a signal up 1.3 THz detect both amplitude phase of signals 1.2 THz, ~10 THz. Additionally, transmitter receiver ~300 electronic smelling using rotational spectroscopy, 30-Gb/s 300-GHz QPSK data communication with -6-dBm output power, 820 imaging array fabricated in reported. These results, along the circuit performance literature, link...
The two-port antenna is designed for THz communication where isolation achieved with the defective ground. radiator of inspired by half-cutting technology which reduces size and makes it a compact antenna. T-shaped stub open-ended slot are used to modify capacitive inductive reactance diminish discontinued surface current improve port isolation. improves electric length ground enhances up 3.4 dB in weaken mutual create non-uniform intensifications 7.7 at 2.2 THz. dimensions design 100 µm x...
It is projected that mobile traffic will increase by 80x year 2030. To meet this in demand, it inevitable to utilize the terahertz bands (0.1 THz 10 THz) for future 6G wireless systems. However, operating at such high frequency comes with several fundamental and technical challenges. In work, we present a proof-of-concept system demonstrate feasibility of establishing communication link 140 GHz carrier frequency. addition, work highlights techniques tackle challenges regime. authors...
A quadrature LC-VCO incorporating passive coupling and broadband harmonic combining for frequency multiplication by 4, NMOS switched variable inductors is fabricated in 65 nm bulk CMOS to generate signals at 85 127 GHz. The bypasses the need a on-chip bias-T, while reducing power consumption, phase noise, theoretical conversion loss 4th order generation 3 dB over linear superposition. 39% tuning range least 4x higher than other implementations with center 90 At consumption of 30–45 mW from...
To demonstrate the applicability of NMOS switched variable inductors in millimeter wave frequencies, a 21.5 to 33.4 GHz wide tuning range LC voltage-controlled oscillator (LC-VCO) with frequency tunable output buffers that uses is reported. The measured phase noise at 10 MHz offset VCO fabricated 65 nm bulk CMOS process varies from -117 -109 dBc/Hz. core consumes 4 or 6 mA 1.2 V power supply. These correspond record 43.3% range. FOMT ranges -191.7 -181.9 With buffers, signal above -15 dBm...
A 300-GHz 30-Gbps QPSK transmitter is demonstrated in 65-nm CMOS. The consists of an on-chip multi-mode modulator, injection locked quadrature oscillator, a 40-GHz bandwidth power amplifier with constant gain and group delay, 4X frequency multiplier chain to generate 165-GHz LO signal for double balanced up-conversion mixer that generates the output at 300 GHz. without equalization consumes 180mW energy efficiency 6 pJ/bit.
A 200-280 GHz RF front-end of transmitter is demonstrated in 65-nm CMOS. Saturated EIRP greater than -5dBm over a frequency range 60GHz. When the input power -20dBm, -10dBm for most range, and achieves 3-dB 6-dB bandwidths 24% 33%. The was integrated with fractional-N synthesizer to form operating at 208-255GHz -18 -11dBm. CMOS receiver are used rotational spectroscopy detect ethanol human breath.
A 160-310 GHz frequency doubler for rotational spectroscopy with a driver amplifier is demonstrated in 65-nm bulk CMOS process. At 0-dBm input power, the measured output power (Pout) varies from 3 to -8 dBm. The wide operating range attributed bandwidth and matching structure based on broadband open short leading >40dB difference between fundamental second harmonic at output. doubler-amplifier combination has comparable larger than 200-300 COTS GaAs modules.
A textile integrated, two-element, multiple-input multiple-output (MIMO) antenna is designed for Wi-Fi, wireless local area network (WLAN), and wearable biomedical applications. CSRR slot horn-shaped decoupling structure increases impedance matching reduces the current movement from one element of to another which isolation 7.4 dB. The in ground accomplished between elements mitigate surface enhance up 27.4 10-dB radiation exists 4.65 5.97 GHz with more than 20-dB full operating band where...
Here, several classes of magneto-electric devices, and their possible implementations as complementary metal-oxide-semiconductor (CMOS) replacements, are discussed. We consider how these devices can provide considerable improvements in functionality over CMOS when employed novel circuit architectures. In the context device technologies discussed here, we detail expansion benchmarking into some newer beyond-CMOS technologies. This has required level simulations, using Cadence Spectre or...
We report on our progress in utilizing THz breath sensing several bio-medical diagnostic applications. Our work bears promise applying this technology to non-invasive analysis of blood glucose based chemical composition breath, as well assessment asthma related airway inflammation. most recent testing CMOS sensor, the evolution towards compact and affordable implementations, is discussed.
A 140GHz 4-element RF beamforming phased-array receiver (RX) has been demonstrated in 22nm FDSOI CMOS. The proposed single-side-band architecture provides >25dB and >20dB measured image rejection ratio (IRR) across 4GHz 8GHz channel bandwidth centered at 7GHz intermediate frequency (IF). Each front-end element consists of a wideband low-noise amplifier (LNA) vector-modulator phase shifter. 4 elements are combined on chip through power combiners driver amplifiers before the double-balanced...
Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide Semiconductor) integrated technology an alternative for realizing capable affordable THz systems. Coherent detection up to 410 GHz incoherent 10 as well almost fully receiver working from 225–280 been demonstrated using CMOS. Despite the fact that f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> NMOS transistors has peaked around 320 GHz, it should be...
We discuss the application of a novel class device, magneto-electric magnetic tunnel junction (ME-MTJ) to realize variety computational functions, including majority logic and XNOR/XOR gate. also develop compact model describe operation these devices, which function by utilizing phenomenon 'voltage-controlled magnetism' switch operational state MTJs. The breaks down switching process into three key stages operation: electrical-to-magnetic conversion, magnetization transfer, final-state...
A transmitter for rotational spectroscopy using a fractional-N PLL (FNPLL) that generates frequency shift keyed signals from 85 to 127 GHz (39% tuning range) with fine step of ∼570 Hz and settling time ∼10 μS is demonstrated. Implemented in 65-nm CMOS, the FNPLL delivers greater than 5 μW output power, achieves measured phase noise less −70 dBc/Hz in-band −102 at 10-MHz offset over range while consuming 80 mW. The radiated bond-wire antenna successfully utilized spectrometer detection gas molecules.
Recent advances of CMOS technology and circuits have made it an alternative for realizing capable affordable THz systems. With process circuit optimization, should be possible to generate useful power coherently detect signals at frequencies beyond 1THz, incoherently 40THz in CMOS.
A Verilog-A based model for the magneto-electric field effect transistor (MEFET) device is implemented and a variety of logic functions on this are proposed. These models used to capture energy consumption delay per switching event benchmark MEFET with respect CMOS. Single-source devices can be conventional gates like NAND, NOR, inverter buffer more complex circuits full adder. The dual source an enhanced version which spin multiplexer (spin-MUXer). Circuits using MEFETs require fewer...
A fully integrated CMOS receiver for mm-wave rotational spectroscopy is demonstrated. The consists of a sub-harmonic mixer based receiving front-end which down-converts 225–280 GHz RF input to 20 intermediate frequency, 20-GHz AM demodulator followed by baseband buffer amplifier, and an 122–139 local oscillator chain comprised frequency quadrupler driver amplifier. exhibits responsivity 400–1200 kV/W noise equivalent power 0.4 1.2 pW/√Hz from 225 280 GHz. Detection ethanol, propionitrile...
Abstract A compact, circularly polarized, CPW-fed antenna is proposed for wearable applications in ISM Band (5.8 GHz). The based on DGS, where the ground plane responsible impedance matching. 10 dB of varies from 5.39 GHz to 5.94 GHz. circular stub introduced mitigates surface current and enriches 3 axial ratio 5.73 5.92 Proposed exhibits LHCP RHCP pattern polarization, can effectively work biomedical applications. analyzed skin phantom model SAR value obtained 1.218 W/kg, which below...
CMOS (Complementary Metal Oxide Semiconductor) transmitter and receiver circuits for rotational spectroscopy are demonstrated. The IC's implemented in 65-nm consist of a 208-252 GHz 225-280 receiver. Use electronics can reduce the cost spectrometer application from over $50k to less than $1k. (RX) includes an on-chip antenna air-to-chip interface, 2nd order sub-harmonic down-conversion mixer, low noise IF amplifier amplitude detector. (TX) chip-to-air Fractional-N synthesizer with frequency...
The objective of this research paper is the simulation modeling wind turbine emulator (WTE), which essential to make a test rig for Condition monitoring generator (WTG). Wind characteristics are emulated by means D.C machine. Further, based on results discussed followed comprehensive discussion similarity these with those motor along curves. and observations obtained in present verify capability WTE vary torque as replica rotor torque. developed allows energy conversion system be analyzed...
We present a D-band power amplifier (PA), implemented in Teledyne (TSC)-250-nm InP technology, that produces 27.2dBm output and 14.9% associated PAE at 150 GHz. The measured saturated exceeds 26 dBm over 126–150 stage power-combines sixteen <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$f4-\mu \mathrm{m}$</tex> common-base cells, each having capacitive series feedback increases the real part of input impedance, reducing inter-stage matching...