A5055548726- Radio Frequency Integrated Circuit Design
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Advancements in PLL and VCO Technologies
- Photonic and Optical Devices
- Terahertz technology and applications
- Advanced Power Amplifier Design
- Microwave Engineering and Waveguides
- Antenna Design and Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Spectroscopy and Quantum Chemical Studies
- Spectroscopy and Laser Applications
- Optical Network Technologies
- Silicon Carbide Semiconductor Technologies
- Cooperative Communication and Network Coding
- Superconducting and THz Device Technology
- Semiconductor materials and devices
Foundry (United Kingdom)
2024
Intel (United States)
2023-2024
Intel (United Kingdom)
2022
The University of Texas at Dallas
2016-2021
A 300-mm GaN-on-Si(111) high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> gate dielectric E-mode GaN MOSHEMT technology is demonstrated with uniform process and wafer characteristics. The of notation="LaTeX">$L_{\mathrm {G}}$ = 90 nm, {GS}}$ {GD}}$ 80 enabled by capabilities in deep U (DUV) lithography, MOCVD, atomic layer etch (ALE), deposition (ALD), Cu interconnect....
Advancements in 300 mm GaN-on-Si enhancement-mode (E-mode) GaN N-MOSHEMT technology featuring monolithically integrated Si pMOS by layer transfer are presented. In this work, a true gate-last flow is employed, where the high-temperature activation steps of transistors completed before depositing gate dielectric N-MOSHEMT. addition to integration, performance enhanced with an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide Semiconductor) integrated technology an alternative for realizing capable affordable THz systems. Coherent detection up to 410 GHz incoherent 10 as well almost fully receiver working from 225–280 been demonstrated using CMOS. Despite the fact that f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> NMOS transistors has peaked around 320 GHz, it should be...
A 180-GHz minimum shift keying (MSK) receiver (RX) using a phase-locked loop (PLL), which self-synchronizes the carrier frequency, is demonstrated. The mixer-first RX fabricated in 65-nm CMOS process. double-balanced anti-parallel-diode-pair sub-harmonic mixer performs phase detection, reducing frequency of local oscillator (LO) by half. Tunable zeros realized series inductors are used to improve stability and increase data rate handling capability. Without external LO synchronization,...
This paper presents fully integrated power amplifier (PA) and low-noise (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> , peak PAE, linear gain, OP1dB of 25dBm, 38.8%, 24.8dB, 19.8dBm, occupying only 0.079mm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The LNA 24.6dB 2.9dB noise figure, -11.4dBm IIP3 at...
Recent advances of CMOS technology and circuits have made it an alternative for realizing capable affordable THz systems. With process circuit optimization, should be possible to generate useful power coherently detect signals at frequencies beyond 1THz, incoherently 40THz in CMOS.
This paper presents the design and characterization of a fully integrated 25.5-31GHz power amplifier (PA) using enhancement-mode high-k dielectric Gallium nitride (GaN) MOS-HEMTs in 300mm GaN-on-Si technology. The two-stage PA achieves peak S <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</inf> 27.7dB at 26.6GHz with 3-dB bandwidth 5.5GHz (20.1% fractional bandwidth). With Li-ion battery compatible 4V supply, measured P...
An integrated 425-GHz radio frequency (RF) to 25-GHz intermediate (IF) second-order subharmonic downconverter, including an on-chip 8X local oscillator (LO) signal multiplier circuit that provides ~1 dBm at 200 GHz from externally applied signal, and a IF amplifier, achieves conversion gain of 6.7 dB noise figure ~17 dB. The downconverter consumes 190 mW dc power. Compared the previously reported CMOS SiGe HBT receivers/downconverters operating around 400 above, ~18-dB lower single side band...
A self-synchronizing minimum shift keying (MSK) receiver operating at 315-GHz RF is demonstrated in 65-nm CMOS. The outputs digital bits and utilizes a PLL based architecture that includes frequency doubler the loop to achieve operation. used form 10-Gbps link with BER <; 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-11</sup> an input power of -21-dBm without using separate synchronization between transmitter receiver, data equalization....
A 180 GHz mixer-first phase-locked-loop based MSK receiver is demonstrated in 65-nm CMOS. Double balanced anti-parallel-diode-pair (APDP) sub-harmonic mixer forms the phase detector. Compensation using multiple zeros reduces effect of in-loop delay on stability PLL. Without external LO synchronization, achieves 10 Gbps with a BER <; <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup> at -24-dBm available input power. The open loop...
A technique for realizing an efficient broadside radiation bond-wire antenna short-range wireless communication is demonstrated. The bond wire forming the located around <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$375~\mu \text{m}$ </tex-math></inline-formula> ( notation="LaTeX">$\sim \lambda $ /4 at 180 GHz) above ground plane on a printed circuit board (PCB) constructive interference of reflected...
CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz higher. Signal generation up to 1.3 THz coherent detection 410 incoherent ~10 have been demonstrated using circuits. Furthermore, highly rotational spectroscopy transceiver operating near imaging arrays 1 in CMOS. well 5 beyond 40 with sufficient performance practical applications should be possible especially minor...
CMOS (Complementary Metal Oxide Silicon) integrated circuits (IC’s) technology is emerging as a means for realization of capable and affordable systems that operate at 300GHz higher. Despite the fact unity maximum available gain frequency, f max NMOS transistors has peaked ~320GHz somewhere between 65 32-nm nodes, signal generation up to 1.3THz coherent detection 410GHz incoherent ~10THz have been demonstrated using circuits. Furthermore, highly rotational spectroscopy transceiver operating...