A5085019685- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Electrostatic Discharge in Electronics
- Ga2O3 and related materials
- Thermal properties of materials
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Power Amplifier Design
- Photocathodes and Microchannel Plates
Intel (United States)
2019-2024
Foundry (United Kingdom)
2024
Intel (United Kingdom)
2022
Arizona State University
2017-2018
ON Semiconductor (United States)
2018
Simón Bolívar University
2009-2011
A 300-mm GaN-on-Si(111) high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$k$ </tex-math></inline-formula> gate dielectric E-mode GaN MOSHEMT technology is demonstrated with uniform process and wafer characteristics. The of notation="LaTeX">$L_{\mathrm {G}}$ = 90 nm, {GS}}$ {GD}}$ 80 enabled by capabilities in deep U (DUV) lithography, MOCVD, atomic layer etch (ALE), deposition (ALD), Cu interconnect....
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar for a given active die size. The unique structure of TMBS devices allows efficient manipulation the electric field, enabling higher doping concentrations in drift region thus achieving lower forward voltage drop (VF) reduced leakage current (IR) while maintaining high breakdown (BV). While use trenches to push fields away from mesa surface is widely employed...
The use of a π -shaped gate structure is proposed for GaN HEMTs, which effectively reduces the hot-electron generation under all regimes operation, while preserving device performance well into lower millimeter-wave frequency range. Simulations dc and large-signal RF conditions π-gate device, along with corresponding electron energy distribution functions, were obtained full-band cellular Monte Carlo simulator self-consistently coupled to harmonic-balance circuit solver compared simulations...
In order to assess the underlying physical mechanisms of hot carrier-related degradation such as defect generation in millimeter-wave GaN power amplifiers, we have simulated electron energy distribution function under large-signal radio frequency conditions AlGaN/GaN high-electron-mobility transistors. Our results are obtained through a full band Monte Carlo particle-based simulator self-consistently coupled harmonic balance circuit solver. At lower frequency, simulations Class AB amplifier...
This paper presents fully integrated power amplifier (PA) and low-noise (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf> , peak PAE, linear gain, OP1dB of 25dBm, 38.8%, 24.8dB, 19.8dBm, occupying only 0.079mm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The LNA 24.6dB 2.9dB noise figure, -11.4dBm IIP3 at...
We demonstrate a high voltage enhancement-mode (E-mode) high-k GaN-on-300mm Si(111) NMOS transistor capable of best-in-class performance and figure-of-merits for integrated power electronics RF mm-wave. Using scaled submicron-length field-plate, the high-voltage GaN transistors excellent R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> <675Ω·μm with BV xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> up to 100V, figure-of-merit...
We demonstrate industry's first CMOS "DrGaN" technology fabricated in a 300mm GaN-on-Silicon process combining enhancement-mode high-k dielectric GaN MOSHEMT with integrated 3D monolithic Si PMOS by layer transfer. The 180nm DrGaN power transistor width of 421.1mm achieves an excellent R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> = ImΩ (R xmlns:xlink="http://www.w3.org/1999/xlink">DSON</inf> =0.8 mfl-mm <sup...
The impact on self-heating mechanisms observed in GaN HEMTs fabricated Si substrates is studied by means of a cellular Monte Carlo particle-based device simulator. Within this framework, the thermal effects are included through an energy-balance equation for phonons allowing self-consistently coupling charge and heat transport. First, advanced electrothermal model experimental developed calibrated to measured dc characteristics, showing accurate description throughout IDS(VGS-VDS) space, as...
A comprehensive study of the breakdown voltage optimization trench MOS barrier Schottky (TMBS) rectifiers is performed by means drift-diffusion simulations. First, principles operation are explained in terms charge-sharing effect between and components unit cell, correlated with profiles electric field along drift region E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Sch</sub> capacitor xmlns:xlink="http://www.w3.org/1999/xlink">TMOS</sub> ....
A MOSFET model parameters extraction procedure that overcomes the difficulties of separating effects source-and-drain series resistance and mobility degradation factor is presented. Instead conventional direct fitting, present involves use indirect bidimensional fitting source-to-drain a single device, as obtained from below-saturation output characteristics measured at several above-threshold gate voltages. The verified with simulated long channel FinFET device externally added resistances...
A new procedure is presented to separate and extract source-and-drain series resistance mobility degradation factor parameters in MOSFET compact models. It also allows us the device's channel conductance. The not based on fitting, but directly calculating three by solving a system of simultaneous equations. equations represent measured source-to-drain output resistance, obtained from characteristics, its first second integrals with respect gate voltage. This method may be applied single...
AlGaN/GaN HEMTs have demonstrated outstanding performance in terms of high-power and high frequency operation. However, reliability concerns constitute one the limiting factors preventing fully exploitation this technology. In particular, hot electron generation has been consistently reported as main mechanisms for device degradation, since energy carriers can create electrically active traps that reduce [1]. Many studies concentration performed on DC operation only, those done RF do not...
In order to assess the mechanisms of self-heating observed in GaN HEMTs on Si substrates, we have performed electro-thermal characterization an experimental device terms simulation its DC characteristics through expanded full band Monte Carlo particle-based simulator self-consistently coupled energy balance heat equation for phonons. The accurate temperature profiles obtained acoustic and optical phonon modes, showed that location hot spot channel is not at peak electric field, but it...
This paper presents the design and characterization of a fully integrated wide band Doherty power amplifier (PA) in 300mm GaN-on-Si technology employing CMOS-like PDK, rules methodology. A new PA architecture using stacked transistor configuration with equal voltage distribution is implemented auxiliary path to improve performance utilization factor. lumped element based combiner designed maximize bandwidth enhance back-off efficiency. quadrature coupler also on-chip. compact (small core...