A5028162919- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advanced Photocatalysis Techniques
- Anodic Oxide Films and Nanostructures
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
- Molten salt chemistry and electrochemical processes
- 2D Materials and Applications
- Intermetallics and Advanced Alloy Properties
- Plasmonic and Surface Plasmon Research
- Surface and Thin Film Phenomena
- MXene and MAX Phase Materials
- Synthesis and characterization of novel inorganic/organometallic compounds
- Ammonia Synthesis and Nitrogen Reduction
- Luminescence Properties of Advanced Materials
- Photonic Crystals and Applications
- Nanomaterials for catalytic reactions
- Semiconductor Lasers and Optical Devices
- Quasicrystal Structures and Properties
Xi'an Polytechnic University
2019-2024
Xidian University
2020-2024
Shandong University
2014-2019
University of Utah
1988-1992
The mesoporous GaN-based thin films were transferred onto quartz and n-Si substrates. Compared to the film on substrate, substrate exhibited better photoelectrochemical performance.
Bi2S3/g-C3N4 (BSCN) samples with different mass ratios of CN to BS were prepared by a facile and practicable hydrothermal method 2D g-C3N4 nanosheets (CN). The microscopic morphology structure pure CN, BSCN measured multiple testing methods. Analysis results show that the was successfully, Bi2S3 nanoparticles closely uniformly adhered surface sheet-like structure. introduction did not change CN. ultraviolet–visible spectroscopic analysis, photoluminescence spectra electrochemical performance...
The observation of ordering in GaAsP alloys is reported. CuPt structure with along the 〈111〉 directions on anion sublattice was observed by transmission electron diffraction patterns GaAs1−xPx at compositions x=0.3 and 0.4. Only two four variants were observed. degree 1/2[1̄11] direction higher than for other variant, ordered 1/2[11̄1] direction. In addition, decreases when x reduced from 0.4 to 0.3.
Nanoporous (NP) GaN thin films, which were fabricated by an electrochemical etching method at different voltages, used as photoelectrodes during photoelectrochemical (PEC) water splitting in 1 M oxalic acid solution. Upon illumination a power density of 100 mW cm−2 (AM 1.5), is observed NP presumably resulting from the valence band edge more positive than redox potential oxidizing species. In comparison with film 8 V, obtained 18 V shows nearly twofold enhancement photocurrent maximum...
High-quality Ga0.51In0.49P, lattice-matched to GaAs, has been grown by atmospheric pressure organometallic vapor-phase epitaxy. The growth was performed at a temperature of 680 °C and rate about 12 μm/h. indium distribution coefficient found be unity this temperature. At V/III ratio 148, the Ga0.51In0.49P epilayers had photoluminescence (PL) half-widths 35 7.2 meV 300 10 K, respectively, best reported results date. As changed from 94 240, 300-K energy band gap measured PL varied only 1.897...
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. In this paper, we first report use nanoporous GaN (NP-GaN) DBR as a template regrowth InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in neutral solution, has smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). chemical composition regrown LED thin film similar to that reference...
The Raman scattering of AlGaAsSb quaternary alloy semiconductors has been investigated for the first time. alloys, including AlGaSb ternary were grown by organometallic vapor phase epitaxy. dependence long-wavelength longitudinal-optical phonon frequencies on composition are reported. first-order spectra show a two-mode behavior alloys and three-mode alloys. For AlGaAsSb, two peaks located below 300 cm−1 assigned as GaAs- GaSb-like LO modes. Two observed above ‘‘AlAs plus AlSb’’ TO A broad...
(AlxGa1−x)0.51In0.49P layers, lattice matched to (001)-oriented GaAs substrates, have been grown throughout the entire aluminum composition range from x=0 1.0 by atmospheric pressure organometallic vapor-phase epitaxy (OMVPE), using trimethylaluminum (TMAl), trimethylgallium (TMGa), trimethylindium (TMln), and phosphine (PH3) as source materials in a horizontal reactor. The growth temperature was held constant at 680 °C. Excellent surface morphologies were obtained over range. Unlike...
Mesoporous GaN-based multiple quantum wells (MP MQWs) with MP GaN-distributed Bragg reflectors GaN DBRs) are obtained via electrochemical etching in a HNO3 solution. Wafer-scale MQWs DBRs have smooth surface, low root-mean-square roughness (RRMS), and high reflectivity. Then, the p-GaN layer is grown on DBR substrate. Compared as-grown light-emitting devices (AG LEDs), LEDs possess an increased blue-shifted luminescence emission. The enhancement results from reduced density of dislocations...
Electrochemical synthesis of NH
The GaN-based multiple quantum wells (MQWs) are etched in NaNO3 solution under room light and transformed into free-standing nanoporous (NP) MQWs embedded on NP GaN reflectors. Then, the sample is transferred onto quartz substrate, which acts as a photoanode during photoelectrochemical water splitting. Compared with as-grown MQW sample, samples present enhanced separation efficiency of photogenerated electron–hole pairs faster interfacial charge-transfer ability. Importantly, exhibits lowest...
Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, samples show a strong photoluminescence (PL) peak at 541.2 nm due quantum size effect structure. Compared membrane with substrate, DBR shows twofold enhancement in PL intensity owing high light reflection bottom DBR.