A5028929984- Photonic and Optical Devices
- Ga2O3 and related materials
- GaN-based semiconductor devices and materials
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Nanowire Synthesis and Applications
- Neural Networks and Reservoir Computing
- Semiconductor materials and devices
- Anodic Oxide Films and Nanostructures
- Thin-Film Transistor Technologies
- Electronic and Structural Properties of Oxides
- Advanced Photonic Communication Systems
- Photonic Crystals and Applications
- Underwater Vehicles and Communication Systems
- Gas Sensing Nanomaterials and Sensors
- Antenna Design and Optimization
- Optical Systems and Laser Technology
- Photorefractive and Nonlinear Optics
- Speech and Audio Processing
- Luminescence Properties of Advanced Materials
- Advanced Optical Sensing Technologies
- Semiconductor Lasers and Optical Devices
- Indoor and Outdoor Localization Technologies
- Advanced Fiber Laser Technologies
Sanming University
2020-2025
Beijing Institute of Technology
2020
Peking University
2015-2017
Shandong University
2011-2017
This study explores the mechanisms responsible for bandwidth reduction observed in Ge-on-Si photodetectors under high incident light power. We investigate impact of carrier-screening effect on through simulations, and we mitigate this by increasing applied bias voltage. The increase concentration photogenerated carriers leads to a carrier saturation drift velocity, which reduces photodetector; phenomenon is studied first time. determined primarily velocity when power below 2.5 mW, decrease...
This study explores the mechanisms responsible for bandwidth reduction observed in germanium photodetectors under high signal light power. We investigate impact of carrier-shielding effect on through simulations, and we mitigate this by increasing applied bias voltage. The increase concentration photogenerated carriers leads to a carrier saturation drift velocity, which reduces photodetector; phenomenon is studied first time. determined primarily velocity when incident power below 2.5 mW....
We review current silicon photonic devices and their performance in connection with energy consumption. Four critical issues are identified to lower consumption systems: reducing the influence of thermo-optic effect, increasing wall-plug efficiency lasers on silicon, optimizing modulators, enhancing sensitivity photodetectors. Major conclusions (1) Mach–Zehnder interferometer-based can achieve athermal without any extra while microrings do not have an efficient passive solution; (2) while...
We investigated the Ge-on-Si photodetector's performance enhancement by optimizing detector length, therefore, location of distributed Bragg reflector (DBR). Since unabsorbed signal light in photodetector oscillates between germanium and silicon layers, but DBR is on layer, optimized will result shorter devices, with increased bandwidth, reduced dark current, consistent responsivity. The 5 μm long an shows responsivity 0.72 A/W, at least 31.7 GHz 3 dB bandwidth; current only 7 nA 1550 nm.
The design of vertical and lateral PIN Ge-on-Si photodetectors was motivated by the disparity in electron hole mobilities. In case junction detectors, configuring slab region as n-type doping leads to a notable increase bandwidth approximately 20 GHz compared utilizing p-type for slab. For we determined that setting length be 2.8 times region, based on carrier saturation drift rate ratio, does not compromise bandwidth. This configuration enhances while minimizing light absorption loss from...
This paper proposed a photodetector with dual-injection structure. Input power is splitted into two beams by 3 dB beam splitter at the incident end and then coupled photodetector, which can make light field distribution in germanium absorption layer more uniform. With same active area structure, responsivity of structure be increased 45.73% 108.33 mW, saturated optical could induced 44.76%, bandwidth improved 6.74 GHz 20 mW comparing single-injection The improves performance device without...
Abstract Near-infrared up-conversion lasing in erbium(Er)-yttrium(Y) chloride silicate nanowires was demonstrated when pumped by 1476 nm laser at room temperature. The emission covers a very wide wavelength range (400–1000 nm). A clear threshold for 985 peak observed launched average pump power of approximately 7 mW. Above threshold, the intensity increases linearly turning up power. full width half maximum decreases from 1.25 to 0.25 reducing measurement temperature 30 K K, which is...
We studied the relationship between absorption layer length and performance of Ge-on-Si microring resonator photodetectors. The principle optimizing based on light field distribution was proposed. In photodetectors, transmission is alternately distributed among germanium silicon waveguide layer, gradually absorbed by layer. For should be set to achieve maximum in at end photodetector, then remaining optical power can coupled back transmit for again. demonstrated simulation that, device with...
Quasi-aligned GaN layer-built nanotowers on silicon (111) substrates by employing ultrathin Ni catalyst films have been grown at 800 °C in a metal-organic chemical vapor deposition system. The nanotower size and the degree of alignment were found to be highly sensitive changes film thickness. several growth stages examined microscopic technique, which indicates variation surface morphology from islands hexagonal prismatic particles, finally nanotowers. For third stage, may attributed an...