A5102313358- Magnetic properties of thin films
- Multiferroics and related materials
- Magnetic and transport properties of perovskites and related materials
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Physics of Superconductivity and Magnetism
- Thermal Expansion and Ionic Conductivity
- Quantum and electron transport phenomena
- Magneto-Optical Properties and Applications
- Graphene research and applications
- 2D Materials and Applications
- Ferroelectric and Piezoelectric Materials
- Terahertz technology and applications
- Vibration and Dynamic Analysis
- Embedded Systems Design Techniques
- Acoustic Wave Resonator Technologies
- Photosynthetic Processes and Mechanisms
- Topological Materials and Phenomena
- Semiconductor materials and devices
- Theoretical and Computational Physics
- Plant Molecular Biology Research
- Plant nutrient uptake and metabolism
- Cold Fusion and Nuclear Reactions
- Chalcogenide Semiconductor Thin Films
- Low-power high-performance VLSI design
Hunan University
2025
Hong Kong University of Science and Technology
2024
University of Hong Kong
2024
Beijing Normal University
2024
Tarim University
2024
Tsinghua University
2018-2022
Out-of-plane spin polarization σ
Antiferromagnetic materials, which have drawn considerable attention recently, fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently manipulate the magnetic state of an antiferromagnet is key development antiferromagnetic spintronics. In this review, we introduce four main methods (magnetic, strain, electrical, optical) mediate states elaborate on intrinsic origins different materials. Magnetic...
Hexokinase (HXK) plays a crucial role in plants, catalyzing the phosphorylation of hexose substances, which is one key steps sugar metabolism and energy production. While HXK genes have been well-studied model evolutionary functional characteristics gene family jujube unknow. In this study, members were identified by bioinformatics methods, regulating glucose transcriptome data, finally function was verified instantaneous stable genetic transformation. Our results showed that seven genome,...
We observe terahertz (THz) emission in Mn3Sn, Mn3Sn/Pt, and Mn3Sn/Co films excited by a femtosecond laser pulse. In the Mn3Sn film Mn3Sn/Pt heterostructures, THz originates from both magnetic-dipole superdiffusive transient spin current with different proportions. Our results unambiguously demonstrate that can be controlled structure of Mn3Sn. The (0001)-orientated produces stronger than (112¯0)-orientated counterpart because for latter one, only half kagome planes are parallel to field,...
Rich magnetic phase transition makes the antiperovskite manganese nitride Mn3AN family an ideal platform to explore anomalous Hall effect (AHE) with different configurations. Here, we report observation of AHE signals up room temperature in antiferromagnetic (AFM) (001)-oriented Mn3SnN thin films. signals, originated from Berry curvature, can be controlled by growth-induced biaxial strain, which leads modulation noncollinear AFM A relatively large strain could enhance ascribed canted...
The coercive field of ferromagnets generally increases with decreasing the sample size to hundreds nanometers mainly because (edge) defect pinning. We investigate size-dependent anomalous Hall effect (AHE) in (112¯0)-oriented noncollinear antiferromagnetic Mn3Sn films. switching (coercive field) AHE decreases abruptly when width bar nanometers, giving rise reduced from 445 30 mT for 2 μm 100 nm. This observation is contrast ferromagnetic counterpart. transition a multidomain single...
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The is generally switched by applying external magnetic fields. Here we investigate current-induced spin-orbit-torque switching of ${\mathrm{Y}}_{3}{\mathrm{Fe}}_{5}{\mathrm{O}}_{12}$ ($\mathrm{YIG}$)/$\mathrm{Pt}$ bilayers with in-plane anisotropy, detected Hall...
Multi-die FPGAs are widely adopted for large-scale accelerators, but optimizing high-level synthesis designs on these faces two challenges. First, the delay caused by die-crossing nets creates an NP-hard floorplanning problem. Second, traditional directive optimization cannot consider resource constraints each die or timing issue incurred die-crossings. Furthermore, high algorithmic complexity and large scale lead to extended runtime legalizing floorplan of HLS under different...
In article number 1808376, Cheng Song, Feng Pan, and co-workers report a high-performance two-terminal selector based on symmetrical multilayer structure of homogeneous tantalum oxides, possessing bidirectional threshold switching operation, large selectivity, high compliance currents, tunable voltages. The can realize 1S1R read-write functions, thus avoiding crosstalk issues, is stacked with memristor. design might advance practical implementation selectors in the field emerging memories...
The local modulation of exchange bias in resistive switching structure Co/CoO x /HfO /Pt is reported, where CoO serves as the storage medium and Co behaves bottom (positive) electrode. stack shows effect for coupling at interface high resistance state. formation metallic or Co‐rich conductive filaments layer low state leads to bi‐hysteresis loops, reflecting manipulation positions, Co‐based just below have no pinning effect. Besides, an oxidation–reduction process occurs layer, producing...
Spin Hall magnetoresistance (SMR) provides an effective tool to probe the spin structure in magnet/heavy metal bilayers. Here, we investigate SMR Gd3Fe5O12 (GdIG)/Pt bilayers, where GdIG is a compensated ferrimagnetic insulator. Under finite magnetic field, has collinear phase far away from temperature (Tcomp) and noncollinear/canted around Tcomp of 278 K. A conventional behavior observed at different temperatures without any sign change Tcomp. Meanwhile, asymmetric (unidirectional-like)...
Abstract Antiferromagnets offer unique advantages in the development of spintronics because absence stray field, insensitivity to external disturbances and ultrafast terahertz eigenfrequency, advancing devices toward small‐size high‐speed. However, ultralow read‐out signals antiferromagnetic are notoriously smaller than their ferromagnetic counterpart, seriously hindering antiferromagnets. Thus, experimental realization large antiferromagnets, especially vertical devices, is intensely...
It has long been an ultimate goal to introduce chemical doping at the atomic level precisely tune properties of materials. Two-dimensional materials have natural advantage because its highly-exposed surface atoms, however, it is still a grand challenge achieve this experimentally. Here, we demonstrate ability in graphene with atomic-level precision by controlling adsorption individual Se which are extracted from underneath WSe2, interface graphene-WSe2 heterostructures. Our scanning...
Local control of magnetism is considered as an elegant approach to optimize the performances memory devices and magnetic logics. In article no. 1800446, Cheng Song co-workers demonstrate local modulation exchange bias effect in resistive switching structure Co/CoOx/HfOx/Pt. The cobalt-based conductive filaments concomitant Co metals just below at low state are not pinned by antiferromagnetic CoOx layer, leading absence bias, while uniform film layer. Their combination contributes...