A5100345313- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Solid State Laser Technologies
- Orbital Angular Momentum in Optics
- Magnetic properties of thin films
- Semiconductor materials and devices
- Quantum Information and Cryptography
- Electronic and Structural Properties of Oxides
- Photorefractive and Nonlinear Optics
- Semiconductor Lasers and Optical Devices
- Magnetic Properties and Applications
- Optical Polarization and Ellipsometry
- Semiconductor materials and interfaces
- Quantum optics and atomic interactions
- Magneto-Optical Properties and Applications
- Liquid Crystal Research Advancements
- Nanowire Synthesis and Applications
- Glass properties and applications
- Magnetic and transport properties of perovskites and related materials
- Parkinson's Disease Mechanisms and Treatments
- Cardiovascular Function and Risk Factors
- Mechanical and Optical Resonators
- Advanced Fiber Laser Technologies
- Neutrophil, Myeloperoxidase and Oxidative Mechanisms
Dalian Medical University
2024
Second Affiliated Hospital of Dalian Medical University
2024
Soochow University
2024
Shaanxi University of Science and Technology
2024
South China Normal University
2022
Hebei University of Technology
2021
Jiangsu Police Officer College
2021
University of Delaware
2019
Institute of Semiconductors
2019
Chinese Academy of Sciences
2019
High volume spin transfer torque magnetoresistance random access memory (STT-MRAM) for standalone and embedded applications requires a thin perpendicular magnetic tunnel junction (pMTJ) stack (∼10 nm) with (TMR) ratio over 200% after high temperature back-end-of-line (BEOL) processing up to 400 °C. A reference layer low moment strong anisotropy (PMA) is key reduce the total thickness of full pMTJ stack. We demonstrated interfacial PMA Ruderman-Kittel-Kasuya-Yosida exchange interaction in...
<b><i>Background:</i></b> The burden of Parkinson’s disease (PD) is still increasing, and physical activity a modifiable factor for health benefits. benefits in PD are not well established. Therefore, this study aimed to investigate the association between various types risk developing PD. <b><i>Methods:</i></b> Data from 432,497 participants UK Biobank, who were free at baseline, analyzed. Physical levels assessed by measuring duration walking...
Diabetic cardiomyopathy (DCM) is identified as a progressive disease that may lead to irreparable heart failure. Toll-like receptor (TLR) signaling believed be implicated in the pathogenesis of DCM. This study intended explore potential impact 4 (TLR4) on DCM
An efficient continuous-wave, widely tunable, intra-cavity optical parametric oscillator (OPO) based on periodically poled MgO:LiNbO3 (MgO:PPLN) with a compact three-mirror linear cavity was demonstrated. The mode radii of fundamental and OPO cavities plane concave mirrors were calculated theoretically compared. result shows that the laser beam could be compressed, its power density MgO:PPLN crystal improved by optimizing mirrors. Meanwhile, better matching between realized. A tunable signal...
Band offset transitivity is reexamined extendedly by employing oxide heterojuctions. The valence band offsets (ΔEV) at HfO2/SiO2, Al2O3/SiO2, and HfO2/Al2O3 heterojunctions are experimentally determined to be 0.81, 0.25, 0.25 eV, respectively, X-ray photoelectron spectroscopy. Thus, the ΔEV heterojunction not equal HfO2/SiO2 minus Al2O3/SiO2 heterostructures (0.25 ≠ 0.81 − = 0.56), i.e., rule fails for heterojunctions. Different distributions of interfacial induced gap states three...
Abstract Magnetoresistive random access memories (MRAMs) have drawn the attention of radiation researchers due to their potential high tolerance. In particular, spin-orbit torque MRAM (SOT-MRAM) has best performance on endurance and speed, which is considered be one candidates replace SRAM for space application. However, little been given γ -ray irradiation effect SOT-MRAM device yet. Here, we report Co-60 results both SOT (spin-orbit torque) magnetic films SOT-Hall devices with same stacks....
In this paper, a classical Lorentz oscillator is quantized via Bohr–Sommerfeld quantum theory and 1- 2-photon absorption (1PA 2PA) selection rules of mechanics. Based on the model hydrogen-like atom in adiabatic approximation, computational formulas linear nonlinear parameters damping coefficient are derived further expressed terms microphysical quantities, such as electronic charge mass, Bohr radius, effective number. accordance with Boltzmann thermal equilibrium distribution, here, number...
To investigate the relationship between indium content and optical properties during epitaxial growth of an InGaAs/GaAs single quantum well (SQW), simulation experiments are demonstrated. The is demonstrated with low-pressure metal–organic chemical vapor deposition. Photoluminescence (PL) spectroscopy applied to research PL at room temperature. In/(In+Ga) varies from 0.24 0.36, resulting in increasing full-width half-maximum (FWHM) wavelength exhibiting a red-shift. A SQW 0.36 manufactured,...
Abstract Generally, most of the photonic spin Hall effect (SHE) are investigated based on Gaussian beam, and research SHE in novel beams with non‐Gaussian distribution is relatively rare. The Airy beam one whose initial field asymmetric tunable. Thus, it necessary to explore beam. Here analytical solutions for transverse in‐plane shifts derived, peculiar systematically researched. theoretical results show that left‐ right‐handed circularly polarized asymmetric, identical. More importantly,...
Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.2</sub> In xmlns:xlink="http://www.w3.org/1999/xlink">0.8</sub> Sb/InAs xmlns:xlink="http://www.w3.org/1999/xlink">0.4</sub> Sb xmlns:xlink="http://www.w3.org/1999/xlink">0.6</sub> heterostructures have been successfully grown on GaAs substrate by molecular beam epitaxy (MBE). The influence of three different metamorphic buffer layers the transport properties and crystal quality samples has...
In the paper, development on MBE-based SiGe/Si heterojunction bipolar transistors (HBT) is described. The film used in present work was grown by SIVA32 molecular beam epitaxy system made Riber, France. 3 micrometers process technology with poly-silicon emitter to develop SiGe HBT devices. experimental results indicated that both direct current characteristics and cutoff frequency of are satisfactory. gain (beta) devices 50, when collector voltage V<SUB>c</SUB> equals 2V I<SUB>c</SUB> 5 mA....