A5022856358- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Metal and Thin Film Mechanics
- Catalytic Processes in Materials Science
- Electronic and Structural Properties of Oxides
- Catalysis and Oxidation Reactions
- Plasma Diagnostics and Applications
- ZnO doping and properties
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Restless Legs Syndrome Research
- Semiconductor materials and interfaces
- Mesoporous Materials and Catalysis
- Amyotrophic Lateral Sclerosis Research
- Magnetism in coordination complexes
- Global Urban Networks and Dynamics
- Housing Market and Economics
- Diamond and Carbon-based Materials Research
- Metal-Organic Frameworks: Synthesis and Applications
- Magnetic confinement fusion research
- Silicon Nanostructures and Photoluminescence
- Polyoxometalates: Synthesis and Applications
- Particle accelerators and beam dynamics
Ghent University Hospital
2008-2023
Ghent University
2006-2012
Atomic layer deposition (ALD) of films from tetrakis(dimethylamido) titanium (TDMAT) or tetraisopropoxide (TTIP) precursors was investigated. The growth kinetics, chemical composition, and crystallization behavior the were compared for combinations two with three different sources oxygen [thermal ALD using plasma-enhanced (PEALD) plasma]. For TDMAT, rate per cycle (GPC) decreased increasing temperature; while TTIP either water plasma plasma, a relatively constant observed as function...
The key advantage of atomic layer deposition (ALD) is undoubtedly the excellent step coverage, which allows for conformal thin films in high-aspect-ratio structures. In this paper, a model proposed to predict deposited film thickness as function depth inside hole. main parameters are gas pressure, temperature, and initial sticking probability precursor molecules. Earlier work by Gordon et al. assumed 0/100% molecules hitting covered/uncovered section wall hole, thus resulting stepwise...
This paper focuses on the conformality of plasma-enhanced atomic layer deposition (PE-ALD) using trimethylaluminum [; (TMA)] as a precursor and plasma an oxidant source. The was quantified by measuring deposited film thickness function depth into macroscopic test structures with aspect ratios , 10, 22. A comparison thermal process indicates that based is more limited due to surface recombination radicals during step. can slightly be improved raising gas pressure or radio-frequency power....
Vanadium pentoxide was deposited by atomic layer deposition (ALD) from vanadyl-tri-isopropoxide (VTIP). Water or oxygen used as a reactive gas in thermal and plasma-enhanced (PE) processes. For PE ALD, there wide ALD temperature window 50 to . Above , VTIP decomposed thermally, resulting the chemical vapor (CVD) of vanadium pentoxide. The reactions saturated much faster than during leading growth rate approximately 0.7 Å/cycle using Optical emission spectroscopy showed combustion-like plasma...
Single-crystal, submicrometer-sized CaS:Eu luminescent particles were synthesized via a solvothermal route, and these moisture-sensitive coated with aluminum oxide using atomic layer deposition (ALD). Photoluminescence (PL) spectra of uncoated compared. They both showed broad-band PL emission maximum 650 nm. Microencapsulation by layers did not have pronounced effect on the intensity emission. In situ luminescence measurements during accelerated aging (, 80% relative humidity) performed....
In situ NH3 plasma surface-nitridation treatments at 250 °C on both p- and n-type Ge(100) wafers were investigated. An ultrathin high quality GeOxNy interlayer was formed exhibited dielectric breakdown for electric fields greater than 15 MV/cm. Well behaved capacitance-voltage characteristics obtained the complementary metal-oxide-semiconductor capacitors (CMOSCAPs) with HfO2(3 nm)/GeOxNy(1 nm) gate stacks. Gate leakage current density below 5×10−7 A/cm2 VFB±1 V MOSCAPs an equivalent oxide...
Abstract Titanium and vanadium oxide layers have been grown in the pores of two 2D hexagonal ordered mesoporous materials: SBA‐15 (silica) FDU‐15 (phenol/formaldehyde resin). The deposition was controlled by self‐limiting reaction metal precursor with hydroxyl surface. Single, multiple mixed titanium synthesised, influence layer type on catalytic performance liquid phase epoxidation cyclohexene has evaluated. effect support behaviour is discussed, a mechanism proposed. support–oxygen–metal...
Film purity, growth kinetics and conformality were compared for thermal plasma-enhanced atomic layer deposition (PE-ALD) of Al2O3, AlN TiN. The use a plasma to enhance the activity reactant gas results in significant improvement rate film purity. However, based on experiments with an ammonia AlN, PE-ALD appears be quite limited.
Material and electrical properties of TiO2/HfO2 bi-layer gate stacks were investigated for germanium (Ge) based metal-oxide-semiconductor devices. In situ NH3 plasma treatment was employed to passivate the Ge surface promising performance including low capacitance-voltage hysteresis interface trap density achieved. It shows a superior dielectric breakdown voltage (4.2–3.4 V) than HfO2 single layer stack at similar capacitance equivalent thickness (CET) 1.6 nm. A minimum CET 1.4 nm obtained...
The ionization distribution of a small scale rotating cylindrical magnetron discharge is simulated by Monte Carlo based program. simulation describes the high energy electron trajectories and interaction between these electrons sputtering gas, which finally leads to distribution. By radial projection positions on target surface, erosion track dimensions can be correctly simulated. discrepancy experiments shows need modify experimental design control alignment central axis tube magnet...
Experiments on the atomic layer deposition (ALD) of vanadium oxide from vanadyl triisopropoxide are presented. Water and oxygen plasma based processes compared to thermal process which uses water as a reagent. The enhanced enable fast ALD films in wide temperature range (50-200{degree sign}C). Pure, crystalline V2O5 can be grown with at 150{degree sign}C. resulted carbon-contaminated, amorphous vanadia. steps were monitored optical emission spectroscopy.
The influence of the starting conditions and sheath thickness on magnetron discharge is investigated using a Monte Carlo program.The average number ionizations caused by an electron emitted from cathode calculated.It shown that plays crucial role in generation ions sustainment discharge.An analytical formula obtained which relates voltage, ion-induced secondary coefficient.From it, natural explanation for very steep current-voltage (I -V ) characteristic discharges follows.Comparison with...
Current–voltage (I–V) characteristics of a rotatable cylindrical magnetron were measured. The balancing the magnetic field was varied by changing height central magnets. At certain level unbalancing, discharge current displayed bistable behavior with respect to voltage. state system depended on its history and argon pressure. This could be attributed negative differential resistance discharge. A simple model is used interpret results. observed might compromise process stability large area...
Abstract not Available.
ZnO thin films for O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> sensing were obtained with atomic layer deposition (ALD) and treated rapid thermal annealing (RTA). The response of the conductivity to exposure is reversible at 270°C. sensitivity responsivity are increased in comparison 500°C that was reported literature. It assumed improved characteristics due surface-to-volume ratio film. defined as inverse time also because...
Drawing on conceptual research exploring how evolving geographies of finance inform urban and regional change, we examine the size functional scope presence leading global banks across areas in Europe. Based data for 100 major banks, find that their overall is proportional to (the square root of) national gross domestic product. London Luxembourg host far more than can be explained by product, which traced back export banking services. We also analyze specialized services per city. Corporate...