A5026269253- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Copper Interconnects and Reliability
- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Metal and Thin Film Mechanics
- Electronic Packaging and Soldering Technologies
- Advanced Surface Polishing Techniques
- ZnO doping and properties
- Nanofabrication and Lithography Techniques
- Electrodeposition and Electroless Coatings
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Force Microscopy Techniques and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Acoustic Wave Resonator Technologies
- Surface and Thin Film Phenomena
- Ga2O3 and related materials
- Intermetallics and Advanced Alloy Properties
- Advancements in Photolithography Techniques
- Optical Coatings and Gratings
- Copper-based nanomaterials and applications
Fudan University
2016-2025
Shanghai Fudan Microelectronics (China)
2012-2025
State Key Laboratory of ASIC and System
2014-2024
Chongqing Medical University
2019
China International Science and Technology Cooperation
2019
Children's Hospital of Chongqing Medical University
2019
Tokyo Institute of Technology
2019
Kyoto University
2019
RENA Technologies (Germany)
2017
Shanghai Institute of Ceramics
2002
Atomic layer deposition (ALD) of TiO2 thin films using Ti isopropoxide and tetrakis-dimethyl-amido titanium (TDMAT) as two kinds precursors water another reactant was investigated. with high purity can be grown in a self-limited ALD growth mode by either or TDMAT precursors. Different behaviors function temperature were observed. A typical rate curve-increased per cycle (GPC) increasing temperatures observed for the film deposited H2O, while surprisingly GPC at low H2O. An energetic model...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as channel material (offering mobility gain of approximately ×2 for electrons and ×4 holes when compared conventional Si channels). However, many issues still need be addressed before Ge can implemented in high-performance field-effect-transistor (FET) devices. One the key provide high-quality interfacial layer, which does not lead substantial drive current degradation both low equivalent oxide thickness short...
Atomic layer deposition (ALD) of films from tetrakis(dimethylamido) titanium (TDMAT) or tetraisopropoxide (TTIP) precursors was investigated. The growth kinetics, chemical composition, and crystallization behavior the were compared for combinations two with three different sources oxygen [thermal ALD using plasma-enhanced (PEALD) plasma]. For TDMAT, rate per cycle (GPC) decreased increasing temperature; while TTIP either water plasma plasma, a relatively constant observed as function...
The properties of ultrathin ruthenium (∼5nm)∕TaN(∼5nm) bilayer as the copper diffusion barrier are studied. Cu, Ru, and TaN thin films deposited by using ion beam sputtering technique. experimental results show that thermal stability Cu∕Ru∕TaN∕Si structure is much more improved than Cu∕Ru∕Si structure, which should be attributed to insertion amorphous interlayer. microstructure evolution during annealing also discussed. Ru∕TaN can a very promising in future seedless Cu interconnect technology.
Cobalt has caused much interest as an adhesion layer for copper metallization in the next generation interconnect technology. This work investigates effects of glycine and BTA on corrosion polishing properties Co acid slurry. The potentiodynamic polarization measurement results show that can increase rate Co. In solution containing H2O2, adding make surface smoother. slurry without shows good inhibition effect corrosion. adsorb through physisorption chemisorption, obeys Langmuir absorption...
Cobalt has emerged as a potential adhesion layer for advanced copper metallization. This work investigates the role of oxidant and inhibitor on corrosion polishing properties cobalt in acid slurry. It is found that H2O2 could greatly increase static etch rate (SER) removal (RR) cobalt. The 2-Mercaptothiazoline (2-MT) very efficient to inhibit reduce SER RR In glycine based slurry at pH = 5, by using 2-MT, difference between Co Cu can be reduced small value.
The increasing interest in studying the structure-property relationships of ceria dioxide (CeO2) relies on fact that many factors are key to determining performance CeO2 materials. Despite great advances achieved, it remains a formidable challenge regulate nanoparticles at molecular level and gain in-depth insight into their relationships. What is reported here ligand strategy for regulating nanoparticles, terms not only shape, structure, surface composition, but also property. Atomically...
This work investigates the effects of postannealing on electrical properties n-ZnO nanorods/p-Si heterojunction. Well-aligned ZnO nanorods are grown p-Si substrate with a seed layer through hydrothermal method. The as-grown along preferential [0001] direction high single crystalline quality. rectifying characteristics heterojunction effectively improved and rectification ratio is increased tens times after annealing in air. leakage current decreased by two orders magnitude forward-bias...
Cobalt has been applied as liners in current Cu interconnect and even conductors next-generation interconnect. In this work, effects of corrosion inhibitors 1, 2, 4-triazole (TAZ) on Co chemical corrosion, galvanic between Co, polishing properties the H2O2 based acidic slurry have systematically investigated. Results show that 5 mM TAZ yields a low static etching removal rate with selectivity about 1: 1 for to Cu, applicable barrier/ CMP, while 100 high same selectivity, via trench CMP. It...
This work presents an efficient mRNA display protocol for making large libraries of bicyclic peptides and evaluating their performance vs. linear monocyclic formats affinity, specificity & plasma stability in a selection against FGFR3c.
The electrical properties of plasma-enhanced atomic-layer-deposited (PE-ALD) TiO2 as gate dielectric were investigated for germanium-channel complementary metal-oxide-semiconductor capacitors by using ultrathin in situ HfO2/GeO2 interlayers. grown PE-ALD exhibited a k value 50±5. An equivalent oxide thickness 0.9 nm was obtained the TiO2(3 nm)/HfO2(1.2 nm)/GeO2(0.7 nm)/Ge capacitor with very low leakage current density 2×10−7 A/cm2 at VFB±1 V. Capacitance-voltage hysteresis below 30 mV...
We report on the electrochemical process and nucleation mechanism of "direct-on-barrier" electroplating copper ultrathin cobalt adhesion layer from an alkaline CuSO4 ethylenediamine (En) bath without additives. Results show that corrosion current density was much lower in than commercial acidic due to formation CuEn22+ species aqueous CuSO4-En solution. The can well stop reaction between ions Co by reducing potential ions. current-time transients were not typical a diffusion-limited growth....