Zhijun Qiu

ORCID: 0000-0001-8197-9975
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About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • Semiconductor materials and devices
  • Perovskite Materials and Applications
  • Semiconductor materials and interfaces
  • Advanced Sensor and Energy Harvesting Materials
  • Graphene research and applications
  • Chronic Lymphocytic Leukemia Research
  • MXene and MAX Phase Materials
  • Quantum and electron transport phenomena
  • Semiconductor Quantum Structures and Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • GaN-based semiconductor devices and materials
  • Conducting polymers and applications
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Silicon and Solar Cell Technologies
  • Protein Structure and Dynamics
  • Carbon Nanotubes in Composites
  • Ferroelectric and Piezoelectric Materials
  • ZnO doping and properties
  • Computational Drug Discovery Methods
  • Nanofabrication and Lithography Techniques
  • Plant Water Relations and Carbon Dynamics
  • Physiological and biochemical adaptations

Fudan University
2016-2025

Guizhou Normal University
2025

Longyan University
2025

The University of Texas Health Science Center at San Antonio
2017-2024

Chinese Academy of Forestry
2011-2024

Mays Cancer Center at UT Health San Antonio
2023-2024

State Key Laboratory of ASIC and System
2014-2023

Australian Nuclear Science and Technology Organisation
2023

University of Wollongong
2023

University of Science and Technology Beijing
2023

To enable high-speed long-distance underwater optical wireless communication (UOWC) supplementing traditional communication, a low-power 520 nm green laser diode (LD) based UOWC system was proposed and experimentally demonstrated to implement maximal capacity of up 2.70 Gbps data rate over 34.5 m transmission distance by using non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Moreover, maximum rates 4.60 Gbps, 4.20 3.93 3.88 3.48 at distances 2.3 m, 6.9 11.5 16.1 20.7 were...

10.1364/oe.25.027937 article EN cc-by Optics Express 2017-10-27

CircRNA is a novel type of RNA molecule formed by covalently closed loop which have no 5'-3' polarity and possess polyA tail relatively stable due to the cyclic structure. Therefore, they may serve as potential targets diagnosis biomarkers for tumor therapy. cZNF292 an important circular oncogenic plays critical role in progression tube formation. This study aimed at exploring human glioma formation its mechanism action. We found that silencing suppresses inhibiting cell proliferation cycle...

10.18632/oncotarget.11523 article EN Oncotarget 2016-08-23

In this investigation, we experimentally demonstrated a high-speed Gbps long-distance real-time visible light communication system based on non-return-to-zero on-off keying modulation by using high-bandwidth Gallium nitride-based micro-LED with bandwidth of ∼230 MHz and size 40 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μ</i> m <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$ \times...

10.1109/jphot.2017.2775648 article EN cc-by-nc-nd IEEE photonics journal 2017-11-20

As a finite-energy-bandgap alternative to graphene, semiconducting molybdenum disulfide (MoS2) has recently attracted extensive interest for energy and sensor applications. In particular broad-spectral photodetectors, multilayer MoS2 is more appealing than its monolayer counterpart. However, little understood regarding the physics underlying photoresponse of MoS2. Here, we employ scanning photocurrent microscopy identify nature generated in transistors. The generation transport are found...

10.1038/srep07938 article EN cc-by-nc-nd Scientific Reports 2015-01-21

High-quality homogeneous junctions are of great significance for developing transition metal dichalcogenides (TMDs) based electronic and optoelectronic devices. Here, we demonstrate a lateral p-type/intrinsic/n-type (p-i-n) homojunction multilayer WSe2 diode. The photodiode is formed through selective doping, more specifically by utilizing self-aligning surface plasma treatment at the contact regions, while keeping channel intrinsic. Electrical measurements such diode reveal an ideal...

10.1021/acsnano.0c08075 article EN ACS Nano 2021-02-15

The future electronic application of graphene highly relies on the production large-area high-quality single-crystal graphene. However, growth different substrates via either single nucleation or seamless stitching is carried out at a temperature 1000 °C higher. usage this high generates variety problems, including complexity operation, higher contamination, metal evaporation, and wrinkles owing to mismatch thermal expansion coefficients between substrate Here, new approach for fabrication...

10.1002/smll.201805395 article EN Small 2019-04-03

In this study, a novel peptide GPPGPA was screened from the collagen hydrolysates of Chinese giant salamander (Andrias davidianus) skin, and its anti-diabetes mechanism predicted by network pharmacology, an inhibitory effect on α-glycosidase protective IR (insulin resistance) oxidative stress IR-HepG2 cells were detected. Through pharmacology screening, found to have good drug-like properties, 103 targets overlap with T2DM targets. These mainly enriched in PI3K-Akt signaling pathway...

10.1039/d1fo03527d article EN Food & Function 2022-01-01

An experimental study on Schottky-barrier height (SBH) tuning using ion implantation followed by drive-in anneal of As, B, In, and P in preformed NiSi PtSi films is presented. Measured B-implanted Schottky diodes, the effective SBH n-type Si altered to ~1.0 eV. For As- P-implanted p-type can be tuned around 0.9 The process window for most pronounced modification dopant dependent.

10.1109/led.2007.900295 article EN IEEE Electron Device Letters 2007-06-28

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> An experimental study is presented to compare two different schemes used incorporate a high concentration of dopants at the silicide/silicon interface for NiSi and PtSi, i.e., dopant segregation, with purpose lowering Schottky barrier height (SBH) contact systems. Specifically, interfacial introduced either through silicidation-induced segregation (SIDS) or by silicide as diffusion source (SADS)....

10.1109/ted.2007.911080 article EN IEEE Transactions on Electron Devices 2008-01-01

As a representative two-dimensional semiconducting transition-metal dichalcogenide (TMD), the electronic structure in layered MoS2 is collective result of quantum confinement, interlayer interaction, and crystal symmetry. A prominent energy splitting valence band gives rise to many intriguing electronic, optical, magnetic phenomena. Despite numerous studies, an experimental determination valence-band few-layer still lacking. Here, we show how maximum (VBM) splits for one five layers MoS2....

10.1021/acsnano.5b03505 article EN ACS Nano 2015-07-29

Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process some defects are inevitably introduced during material preparation. In this work, laser scanning technique is used to construct lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, the adjacent electrically n-doped with proper gate voltage. laser-oxidized product WOx found be responsible...

10.1021/acsami.9b13948 article EN ACS Applied Materials & Interfaces 2019-10-29

Abstract Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state off-state current, I on / off . However, the depletion-mode nature transistors sets limit thickness layered semiconductor films primarily determined by given as an acceptable specification. Identifying optimum range is significance for material synthesis and device fabrication. Here, we systematically...

10.1038/srep29615 article EN cc-by Scientific Reports 2016-07-12

White light generated by mixing the red, green, and blue laser diodes (RGB LDs) for simultaneous high-speed underwater wireless optical communication (UWOC) high-efficiency solid-state lighting (SSL) was proposed demonstrated experimentally first time. The allowable maximum real-time data transmission rates of 3.2 Gbps, 3.4 3.1 Gbps RGB LDs with corresponding BERs 3.6 × 10-3, 3.5 10-3 3.7 were obtained at a 2.3 m distance using an on-off keying (OOK) modulation scheme, respectively. And UWOC...

10.1364/oe.26.019259 article EN cc-by Optics Express 2018-07-16

Abstract Broadband light detection is crucial for a variety of optoelectronic applications in modern society. As an important‐near infrared (NIR) photodetector, InGaAs PIN photodiodes demonstrate high performance. However, they have limited response range because optical absorption by the window layer or substrate. To exploit broadband capability narrow‐bandgap InGaAs, phototransistor based on hybrid InGaAs‐SiO 2 ‐graphene heterostructure presented. In this system, graphene serves as...

10.1002/aelm.201901007 article EN Advanced Electronic Materials 2020-01-31

In this paper, capacitive-type humidity sensors were prepared by sequentially drop-coating the aqueous suspensions of zinc oxide (ZnO) nanopowders and polyvinyl pyrrolidone–reduced graphene (PVP-RGO) nanocomposites onto interdigitated electrodes. Significant improvements in both sensitivity linearity achieved for ZnO/PVP-RGO compared with PVP-RGO/ZnO, PVP-RGO, ZnO counterparts. Moreover, produced exhibited rather small hysteresis, fast response-recovery time, long-term stability. Based on...

10.3390/s17102415 article EN cc-by Sensors 2017-10-23

2D semiconductors, such as molybdenum disulfide (MoS2 ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on materials is still its early stage, mainly due to non-uniformity individual devices little investigation device circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS2 film successfully synthesized, which then used...

10.1002/adma.202202472 article EN Advanced Materials 2022-06-21

Abstract With the burgeoning developments in artificial intelligence, hardware implementation of neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and transistors) with voltage thresholds were recently proposed as suitable candidates. However, their development hindered by inherent integration issues inorganic ferroelectrics, well poor properties conventional organic ferroelectrics. contrast to synapses, here we demonstrated a two-terminal...

10.1038/s41528-022-00152-0 article EN cc-by npj Flexible Electronics 2022-03-18

Epidermal growth factor receptor variant III (EGFRvIII) is a mutant isoform of EGFR with deletion exons 2-7 making it insensitive to EGF stimulation and downstream signal constitutive activation. However, the mechanism underlying stability EGFRvIII remains unclear. Based on CRISPR-Cas9 library screening, we found that mucin1 (MUC1) essential for glioma cell survival temozolomide (TMZ) resistance. We revealed MUC1-C was upregulated in EGFRvIII-positive cells, where enhanced EGFRvIII....

10.1016/j.phrs.2022.106606 article EN cc-by-nc-nd Pharmacological Research 2022-12-11

The ammonia leaching system has gained widespread usage in the hydrometallurgical processing of spent lithium-ion batteries (LIBs) due to its exceptional selectivity. In this work, a novel process was developed recover Li, Ni, Co, and Cu from NH3·H2O–(NH4)2CO3 solution LIBs. First, solvent extraction using Mextral 54-100 employed selectively more than 98% Ni Cu, with subsequent stepwise stripping organic phase 15 g/L 60 H2SO4 prepare NiSO4 CuSO4 products, respectively. realizes selective...

10.1021/acssuschemeng.3c01714 article EN ACS Sustainable Chemistry & Engineering 2023-06-21

We have investigated beating patterns in Shubnikov-de Haas oscillations for HgTe/Hg_{0.3}Cd_{0.7}Te(001) quantum wells with electron densities of 2 to 3 X 10^{12} cm^{-2}. Up 12 nodes been observed at magnetic fields between 0.9 and 6 T. Zero field spin-orbit splitting energies up 30 meV directly determined from the node positions as well intersection self-consistently calculated Landau levels. These values, which exceed thermal broadening levels, k_B T, room temperature, are good agreement...

10.1103/physrevb.70.115328 article EN Physical Review B 2004-09-27

Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface interfacial energy. In this work, layer-by-layer vacuum stacking transfer method applied obtain non-destructive ML-MoS2 films. Back-gated field effect transistor (FET) arrays 1L-...

10.1088/1361-6528/aafe24 article EN Nanotechnology 2019-01-14

Embryos of the crustacean, Artemia franciscana, undergo alternative developmental pathways, producing either larvae or encysted embryos (cysts). The cysts enter diapause, characterized by exceptionally high resistance to environmental stress, a condition thought involve sHSP (small heat-shock protein), p26. Subtractive hybridization has revealed another sHSP, termed ArHsp21, in diapause-destined embryos. ArHsp21 shares sequence similarity with p26 and sHSPs from other organisms, especially...

10.1042/bj20071472 article EN Biochemical Journal 2008-04-14

Diapause embryos of the crustacean Artemia franciscana exhibit extreme stress tolerance, a property thought to involve molecular chaperones known as small heat shock proteins. To further explore this idea, structure, function and synthesis ArHsp22, an protein, were characterized. ArHsp22 contains amino-terminal WXDPF motifs, alpha-crystallin domain with highly conserved arginine, carboxy-terminal I/VXI/V motif, all typical formed large oligomers exhibited chaperone activity in vitro,...

10.1111/j.1742-4658.2008.06501.x article EN FEBS Journal 2008-06-04
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