A5100372221- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- CCD and CMOS Imaging Sensors
- Infrared Target Detection Methodologies
- Nanowire Synthesis and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Plasmonic and Surface Plasmon Research
- Optical Coatings and Gratings
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Optical Polarization and Ellipsometry
- Calibration and Measurement Techniques
- Semiconductor materials and interfaces
- Photocathodes and Microchannel Plates
- Chalcogenide Semiconductor Thin Films
- Advanced Optical Sensing Technologies
- Semiconductor Lasers and Optical Devices
- Thin-Film Transistor Technologies
- Superconducting and THz Device Technology
- High Entropy Alloys Studies
- Welding Techniques and Residual Stresses
- Ga2O3 and related materials
- Titanium Alloys Microstructure and Properties
- Near-Field Optical Microscopy
Shanghai University
2024
Shanghai Institute of Technical Physics
2015-2024
State Key Laboratory of Transducer Technology
2013-2024
Chinese Academy of Sciences
2015-2024
Tianjin Medical University Eye Hospital
2024
Nanchang University
2024
Wuxi Institute of Technology
2023
University of Science and Technology Liaoning
2018-2022
University of Chinese Academy of Sciences
2020-2022
Zhengzhou University
2022
Abstract Broadband light detection is crucial for a variety of optoelectronic applications in modern society. As an important‐near infrared (NIR) photodetector, InGaAs PIN photodiodes demonstrate high performance. However, they have limited response range because optical absorption by the window layer or substrate. To exploit broadband capability narrow‐bandgap InGaAs, phototransistor based on hybrid InGaAs‐SiO 2 ‐graphene heterostructure presented. In this system, graphene serves as...
The dark current mechanism of extended wavelength InxGa1−xAs photo-detectors is still a debated issue. In this paper, the deep-level transient spectroscopy (DLTS) and characteristics InxGa1−xAs/InP detectors are investigated. Using trap parameters obtained from DLTS measurement, device simulations current-voltage carried out by Silvaco Altas. results reveal that at low reverse bias voltage associated with deep level induced assisted tunneling Shockley-Read-Hall generation mechanism....
Abstract Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status, which offers another degree of freedom in infrared remote sensing. However, scale up monolithically integrating grating-based polarizers onto focal plane array (FPA) detectors, fundamental technical obstacles must be overcome, including reductions extinction ratio misalignment between polarizer and detector, grating line width fluctuations,...
A visible-extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing size, weight and power (SWaP) of imaging systems, especially in low-light night vision other fields that require simultaneous visible near-infrared light detection. However, lower quantum efficiency band has limited extensive application InGaAs FPA. Recently, a novel optical metasurface been considered solution high-performance semiconductor photoelectric...
There are currently growing needs for polarimetric imaging in infrared wavelengths broad applications bioscience, communications and agriculture, etc. Subwavelength metallic gratings capable of separating transverse magnetic (TM) mode from electric (TE) to form polarized light, offering a reliable approach the detection polarization way. This work aims design fabricate subwavelength gold as polarizers InP-based InGaAs sensors 1.0–1.6 μm. The capability on InP substrate with pitches range...
Abstract Electronic layout, such as distributions of charge carriers and electric field, in PN junction is determinant for the photovoltaic devices to realize their functionality. Considerable efforts have been dedicated carrier profiling this specific region with Scanning Probe Microscope, yet reliable analysis was impeded by difficulty resolving high mobility unclear surface effect, particularly on compound semiconductors. Here we nanometer Capacitance Microscopic study cross-section...
A simple method for microfluidic paper-based sample concentration using ion polarization (ICP) with smartphone detection is developed. The concise and low-cost ICP analytical device, which consists of a black backing layer, nitrocellulose membrane, two absorbent pads, fabricated the lamination widely used lateral flow strips. Sample on membrane monitored in real time by whose camera to collect fluorescence images from device. custom image processing algorithm running track concentrated...
Polarization imaging has become a widely-applied detection technique, due to the capabilities of enhanced image contrast and object recognition. Here, we demonstrate 320 × 256 InGaAs focal plane array (FPA) integrated with superpixel-structured subwavelength aluminum grating. An extinction ratio up 19:1 at 1310 nm is realized, which indicates good capability near-infrared polarization detection. Theoretical simulation shows fairly high for such superpixel structure. This difference between...
Polarization imaging plays a crucial role in modern photonic applications such as remote sensing, material classification, and reconnaissance. A novel InGaAs focal plane array integrated with linear-array polarization grating is proposed fabricated to meet the practical needs of near-infrared imaging. In order accurately evaluate performance detector, improved test system used measure transmittance extinction ratio (ER). The results show that detectivity reaches ${1}.{06}\; \times...
We investigate surface passivation effects of SiNx films deposited by inductive coupled plasma chemical vapor deposition (ICPCVD) and enhanced (PECVD) technologies for InAlAs/InGaAs/InP photo-detectors. It is found that ICPCVD film effectively reduces the densities interface states slow traps near SiNx/InAlAs interface, which realize small recombination velocity low current By comparing C-V XPS results, it suggested trap density reduction technology could be attributed to disorder...
Dark current behaviors of the 2.6 gm cutoff wavelength In0,83Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0,17</sub> As photodetectors are investigated as a function mesa etching depth. The total dark monotonically declines from 2.0x10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> A/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to 8.3x10 xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> at 180 K and -10 mV depth...
To explore the correlation between afterimages induced by repeated low-level red light (RLRL) and changes in refraction. Patients who used RLRL for myopia control from 2023.02 to 2024.06 were included this study. The afterimage appeared on a gray background (RGB 217,217,217; Lab 87,0,0). Afterimage color was recorded with CIELAB nomenclature (R, G, B; L, a, b), duration (T) seconds. Axial length (AL) axial length-to-corneal radius ratio (AL/CR) followed up at 1-, 3-month. Participants...
Low surface leakage current is one of the prerequistites to reach low and high efficiencies mesa type photodiodes. In this paper, we have studied 2.6 µm InGaAs p–i–n photodetectors by using two different passivation technologies: inductive coupled plasma chemical vapor deposition (ICPCVD) enhanced (PECVD). It found that total detector with ICPCVD technology significantly reduced compared PECVD due decrease device's current. A TCAD-based dark model further reveals reduction at reverse voltage...