A5020431027- Advanced Semiconductor Detectors and Materials
- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Infrared Target Detection Methodologies
- CCD and CMOS Imaging Sensors
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- ZnO doping and properties
- Ga2O3 and related materials
- Calibration and Measurement Techniques
- Surface and Thin Film Phenomena
- Force Microscopy Techniques and Applications
- Photonic and Optical Devices
- Metal and Thin Film Mechanics
- Semiconductor Lasers and Optical Devices
- Optical Coatings and Gratings
- Electrochemical sensors and biosensors
- Liquid Crystal Research Advancements
- Silicon Carbide Semiconductor Technologies
- Advanced Optical Sensing Technologies
- Ocular Surface and Contact Lens
- Analytical chemistry methods development
- Space Science and Extraterrestrial Life
- Mass Spectrometry Techniques and Applications
Nantong University
2016-2024
Shanghai Institute of Technical Physics
2011-2013
State Key Laboratory of Transducer Technology
2012-2013
Chinese Academy of Sciences
2012-2013
University of Chinese Academy of Sciences
2011-2012
VO2(B), VO2(M), and V2O5 are the most famous compounds in vanadium oxide family. Here, their gas-sensing properties were investigated compared. VO2(B) nanoflakes first self-assembled via a hydrothermal method, then VO2(M) obtained after heat-phase transformation nitrogen air, respectively. Their microstructures evaluated using X-ray diffraction scanning transmission electron microscopies, Gas sensing measurements indicated that gas-insensitive, while both highly selective to ammonia at room...
In this study, a new technique was developed which combines magnetic solid phase extraction (MSPE) and GC-MS, for the analysis of 17 phthalate esters. First, composite iron (used as part) graphene oxide (GO) synthesized application in MSPE. SEM, XRD IR spectroscopy were used to characterize material. Finally, (Fe₃O₄@GO) extract PAEs from water samples. Various parameters relevant optimized, such amount adsorbent employed, adsorption time, luent solvent types volume, sample pH. These optimum...
The effects of temperature on the optical properties InGaN/GaN quantum well (QW) light-emitting diodes have been investigated by using six-by-six K-P method taking into account dependence band gaps, lattice constants, and elastic constants. numerical results indicate that increase leads to decrease spontaneous emission rate at same injection current density due redistribution carrier non-radiative recombination rate. product Fermi-Dirac distribution functions electron fcn hole (1−fvUm) for...
In<sub>x</sub>Ga<sub>1-x</sub>As ternary compound is suitable for detector applications in the shortwave infrared (1-3 μm) band. The alloy In<sub>0.53</sub>Ga<sub>0.47</sub>As lattice-matched to InP substrate, which leads high quality epitaxial layers. Consistently shows low dark current density and detectivity at room temperature with wavelength response between 0.9 1.7 μm. In this paper, planar-type 24×1 linear InGaAs arrays guard-ring structure were designed fabricated based on...
Although Mn2+-doped aqueous ZnSe nanocrystals (NCs) have been reported, the obtained doped NCs usually possess multiple emission peaks originated from nanocrystal bandgap, defects, and Mn-dopants. It is difficult to obtain water-soluble with pure Mn-dopant by traditional synthesis method. In this work, a new light-induced method of doping Mn2+ ions into demonstrated emission. The electrostatic attraction between photogenerated electrons cations considered be driving force diffusion doping....
Temperature dependence of the optical properties InGaN/GaN single quantum well light-emitting diodes (LEDs) with different indium (In) contents is investigated by using effective mass theory taking into account band-gap shrinkage and lattice thermal expansion. The peak intensity spontaneous emission spectrum decreased 30.6%, 30.4%, 30.3% for violet, blue, green LEDs in temperature range 300 K–400 K, while reductions internal efficiency (η) are ~0.13, ~0.11, ~0.1 respectively at injection...
The optical properties of Al0.44Ga0.56N/Al0.59Ga0.41N multiple quantum well structures with an InxAl1-xN insertion layer between the barrier and are investigated by using effective mass theory. numerical results show TE-dominated emission can be realized layer, which mainly attributed to larger separation electron-hole wave-function for TM-dominated transition. Note that rearrangement valence subbands is also important factor enhance TE polarization lower In-content. ratios TE-polarized...
To improve the operability and rate of final products significantly, a novel process was proposed. Detectors with cutoff wavelength at 1.7 μm 2.4 were fabricated in different processes, electricity characteristics spectral response measured. The analyzed by comparing detectors. dark current responsibility detectors new improved. However, has negative effect on μm. pnjunction degenerated leakage increased sharply. In order to find reasons degeneration, methods Auger electron spectroscopy...
Abstract In order to accurately simulate the optical properties of nitride optoelectronic devices, such as reflection spectrum distributed Bragg reflectors (DRBs), constant is generally considered an important parameter. this work, fully-connected neural network adopted predict real and imaginary parts ordinary dielectric function (DF) III-nitrides across full composition range wide spectral range. The input parameters include Al-component, Ga-component, In-component, photon energy....
By adopting the vacuum sealed-ampoule technique, P-type doping of Zn elements in lattice-mismatched NInAs<sub>0.6</sub>P<sub>0.4</sub>/i-In<sub>0.8</sub>Ga<sub>0.2</sub>As/N-InP heterostructure material was achieved to form PN junction. The diffusion mechanism studied using secondary ion mass spectrometry (SIMS) and scanning capacitance microscopy (SCM). Furthermore, temperature-dependent photoelectric properties were investigated after short-wave infrared (SWIR) detector fabricated packaged...
The optical properties of the type-II lineup In x Al 1− N–Al 0.59 Ga 0.41 N/Al 0.74 0.26 N quantum well (QW) structures with different contents are investigated by using six-by-six K – P method. exhibit larger product Fermi–Dirac distribution functions electron <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msubsup> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mi mathvariant="normal">c</mml:mi> <mml:mi>n</mml:mi> </mml:msubsup> </mml:math> and hole <mml:mo...
In this work, we fabricated dual-band 800 × 2 short-wave infrared (SWIR) indium gallium arsenide (InGaAs) focal-plane arrays (FPAs) using N-InP/i-In0.53Ga0.47As/N-InP double-heterostructure materials, which are often applied in ocean-color remote sensing. Using narrow-band interference-filter integration, our detector-adopted planner structure produced two detection channels with center wavelengths of 1.24 and 1.64 μm, a full-width half-maximum (FWHM) 0.02 μm for both channels. The...
The anisotropic optical properties of an AlGaN-based quantum well (QW) structure are investigated by using the effective-mass theory. Firstly, crystal-field bowing parameter (bcr = −0.087) and slope (bs 8) splitting energy (∆cr) — in-plane strain (εxx) curve obtained comparing calculated degree polarization (DOP) AlGaN alloy with experimental values. Then, DOP Al0.35Ga0.65N/AlxGa1-xN single QW structures various Al-content (x 0.5, 0.45, 0.55) in barrier layer is employing parameters....
A chemistry of halogen mixed with neural or inert gas is mostly used for ICP etching III-V compound semiconductor. The has an effect desorption and dilution, on the other hand, damages in lattice due to ion bombardment are induced, which result difficulties improving performances detectors. Good passivation was obtained by using a new technology methane hydrogen instead gas, caused physical were much less because small quality radical. sample etched this compared ones gas. influences process...
The front-illuminated InP/InGaAs/InP PIN hetero-junction photovoltaic subpixels infrared detector has been achieved based on the lateral collection effect of photogenerated carriers. photoresponse uniformity is carried out with a LBIC technique at different temperatures between 88 K and 296 K. With aid scanning capacitance microscopy (SCM) technique, holes diffusion length Lp related to temperature was obtained. result shows that decreases dropping, also varies directly in proportional ....
This article presents the fabrication of front-illuminated planar type InGaAs sub-pixels infrared detector with cutoff wavelength 1.68µm based on lateral collection effect photogenerated carriers. The dimension 385µm×500µm consists five and each which has two sub-elements. electrical properties photo response characteristics were investigated after mounted Dewar. photoresponse map from Laser beam induced current (LBIC) method shows that good uniformity at 296K indicates electron/hole...
PDF HTML阅读 XML下载 导出引用 引用提醒 背照射波长延伸InGaAs面阵焦平面探测器 DOI: 作者: 作者单位: 上海技术物理研究所,上海技术物理研究所,上海技术物理研究所,上海技术物理研究所,上海技术物理研究所,上海微系统与信息技术研究所,上海技术物理研究所 作者简介: 通讯作者: 中图分类号: 基金项目: 国家重点基础研究发展计划（973计划） Back illuminated InGaAs detector arrays with extended-wavelength to 2.4 μm Author: Affiliation: SHANGHAI INSTITUTE OF TECHNICAL PHYSICS THE CHINESE ACADEMY SCIENCES,SHANGHAI SCIENCES,Shanghai Institute of Microsystem and Information Technology,SHANGHAI SCIENCES Fund Project: 摘要 | 图/表 访问统计 参考文献 相似文献 引证文献 资源附件...
In order to study the effect of different passivation films on detector performance, front-illuminated planar-type 256×1 element InGaAs/InP detectors were fabricated with SiN<sub>x</sub> film and SiO<sub>2</sub> film. The was deposited by plasma enhanced chemical vapor deposition (PECVD) magnetron sputtering technology. electrical properties photoresponse characteristics investigated after mounted dewar. maps from laser beam induced current (LBIC) method show that isolation adjacent elements...
An InAlN/GaN heterostructure has been successfully grown on GaN/sapphire and AlN/sapphire substrate by metal organic chemical vapor deposition. The whole epitaxial quality confirmed through X-ray diffraction, while some corresponding micro-structural propagation defects have characterized means of transmission electron microscopy. It can be concluded that these originating from the extended threading dislocation in GaN layer. In addition, with increasing acceleration voltage, a series...
Scanning capacitance microscopy (SCM) and scanning spreading resistance (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential determining their electrical optoelectronic performances. In this work, cross-sectional SCM<sup>1,2</sup> used to study InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths depth as well lateral directions obtained for under different window sizes mask,...