A5100421483- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Ga2O3 and related materials
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Photocathodes and Microchannel Plates
- Boron and Carbon Nanomaterials Research
- Quantum Dots Synthesis And Properties
- Semiconductor Lasers and Optical Devices
- Thermal Radiation and Cooling Technologies
- Electronic and Structural Properties of Oxides
- Advanced Semiconductor Detectors and Materials
- Optical Coatings and Gratings
- Plasmonic and Surface Plasmon Research
- Nanowire Synthesis and Applications
- Advanced Sensor and Energy Harvesting Materials
Shanghai University
2023-2024
Nantong University
2017-2024
Wuhan University
2017
Nanjing University
2011-2016
Collaborative Innovation Center of Advanced Microstructures
2011-2016
National Laboratory of Solid State Microstructures
2011
Fuzhou University
2008-2009
State Key Laboratory of Structural Chemistry
2008
Fujian Institute of Research on the Structure of Matter
2008
For the [0001] oriented AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), holes in p-type electron blocking layer (p-EBL) are depleted due to polarization induced positive sheet charges at last quantum barrier (LQB)/p-EBL interface. The hole depletion effect significantly reduces injection capability across p-EBL. In this work, we propose inserting a thin AlN between LQB and p-EBL, which can generate accumulation AlN/p-EBL Meanwhile, obtain energy when traveling from p-EBL into...
The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared conventional sources. Here, we demonstrate high-brightness green emission from an InGaN/GaN light-emitting diode (LED) structure by combining strong coupling between surface plasmons (SPs) and multiple quantum wells polarization effects SPs. As as-grown LED structure, a significant enhancement is observed total with high degree 54%. This work might...
AlGaN/GaN HEMTs with two kinds of p-type metal-oxide (CuO and NiOx) gates have been fabricated, in which the threshold voltage can be modulated effectively. Especially, device shows a 0.7 V positive shift high-quality CuO gate layer. Meanwhile, high on/off current ratio ~109, large saturated drain ~1030 mA/mm, an improved transconductance 200 mS/mm are also achieved. The pulsed transfer characteristics output exhibit small hysteresis ignorable collapse, signifying excellent CuO/AlGaN...
The effects of temperature on the optical properties InGaN/GaN quantum well (QW) light-emitting diodes have been investigated by using six-by-six K-P method taking into account dependence band gaps, lattice constants, and elastic constants. numerical results indicate that increase leads to decrease spontaneous emission rate at same injection current density due redistribution carrier non-radiative recombination rate. product Fermi-Dirac distribution functions electron fcn hole (1−fvUm) for...
Highly ordered c-plane InGaN/GaN elliptic nanorod (NR) and nano-grating (NG) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The polarized photoluminescence emission from these NR NG has been investigated both theoretically experimentally. Considerable in-plane optical anisotropy, with polarization ratio of 15% 71% peak shift 5.2 meV 28.1 meV, was discovered arrays, respectively. k·p perturbation theory adopted to explore this situation, simulating...
The spontaneous emission rate into Surface Plasmon Polariton (SPP) mode for the InGaN/GaN quantum well (QW) with SP coupling is presented taking account electron and hole band structures, photon density of states, evanescent fields SPP. optical properties SP-enhanced InGaN QW structure different layer number are investigated in detail by using formula. It observed that energy electron-hole pairs can be efficiently transferred SPP modes which will induce significantly enhancement internal...
Through investigating the temperature dependent current-voltage (T-I-V) properties of GaN based blue and green LEDs in this study, we propose an asymmetric tunneling model to understand leakage current below turn-on voltage (V < 3.2 V): At forward bias within 1.5 V ∼ 2.1 (region 1), is main attributed electrons from conduction band n-type layer valence p-type via defect states space-charge region (SCR); While, at 2 2.4 2), heavy holes gradually becomes dominant low (T 200K) as long...
Blue InGaN/GaN nanohole light-emitting diodes have been fabricated by soft UV-curing nanoimprint lithography, filling with CdSe/ZnS core/shell nanocrystals (NCs) as color conversion mediums. The excitonic recombination dynamics of hybrid were investigated time-resolved photoluminescence, observing a significant reduction in the decay lifetime excitons result an efficient non-radiative resonant energy transfer, which leads to improvement and efficiency droop these compared...
Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period MQW about 620 nm. intensity photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) only slightly increased due to the oxidation NS as compared that QW. However, NS/SiO2 can evidently enhance emission efficiency elimination surface oxide layer NS. With increasing laser excitation power, PL enhanced by 25%–53% SiO2...
InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods were fabricated by using soft ultraviolet nanoimprint lithography. The intensity of light emission was found to be greatly enhanced due the strong near-fields confined at interface Al/GaN and extended multiple quantum wells (MQWs) active region. dynamics carrier recombination plasmon-enhanced Raman scattering also investigated, providing a progressive view on effective energy transfer between MQWs surface plasmons.
In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprint lithography and a secondary sputtering process. The involvement of Au nano-ring mask allowed dry etching with high aspect ratio on the substrate. After device fabrication, measured optical spectrum showed innovative structure provided low reflectance absorbance at wavelength around ultraviolet range. photoelectrochemical properties indicated optimized tube height could efficiently enhance water...
The quest for higher modulation speed and lower energy consumption has inevitably promoted the rapid development of semiconductor-based solid lighting devices in recent years. GaN-based light-emitting diodes (LEDs) have emerged as promising candidates achieving high efficiency intensity, received increasing attention among many researchers this field. In paper, we use a self-assembled array-patterned mask to fabricate InGaN/GaN multi-quantum well (MQW) LEDs with intention enhancing...
Temperature dependence of the optical properties InGaN/GaN single quantum well light-emitting diodes (LEDs) with different indium (In) contents is investigated by using effective mass theory taking into account band-gap shrinkage and lattice thermal expansion. The peak intensity spontaneous emission spectrum decreased 30.6%, 30.4%, 30.3% for violet, blue, green LEDs in temperature range 300 K–400 K, while reductions internal efficiency (η) are ~0.13, ~0.11, ~0.1 respectively at injection...
The optical properties of Al0.44Ga0.56N/Al0.59Ga0.41N multiple quantum well structures with an InxAl1-xN insertion layer between the barrier and are investigated by using effective mass theory. numerical results show TE-dominated emission can be realized layer, which mainly attributed to larger separation electron-hole wave-function for TM-dominated transition. Note that rearrangement valence subbands is also important factor enhance TE polarization lower In-content. ratios TE-polarized...
The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits formed at relatively high ratio, while low can enhance lateral rate along c-axis direction. higher leads to density in comparison with lower ratio. surface morphology improved greatly using 500 roughness mean square only 3.9...
The optical polarization characteristics of surface plasmon (SP) coupled AlGaN-based light emitting diodes (LEDs) are investigated theoretically by analyzing the radiation recombination process and scattering respectively. For Al 0.5 Ga N/Al/Al 2 O 3 slab structure, relative intensity TE-polarized TM-polarized spontaneous emission (SE) rate into SP mode obviously depends on thickness layer. calculation results show that TM dominated will be transformed TE with decrease thickness, while...
Abstract In order to accurately simulate the optical properties of nitride optoelectronic devices, such as reflection spectrum distributed Bragg reflectors (DRBs), constant is generally considered an important parameter. this work, fully-connected neural network adopted predict real and imaginary parts ordinary dielectric function (DF) III-nitrides across full composition range wide spectral range. The input parameters include Al-component, Ga-component, In-component, photon energy....
Blue-red complex light emitting InGaN/GaN multi-quantum well (MQW) structures are fabricated by metal organic chemical vapor deposition (MOCVD). The grown on a 2-inch diameter (0001) oriented (c-face) sapphire substrate, which consists of an approximately 2-μm-thick GaN template and five-period layer consisting 4.9-nm-thick In0.18Ga0.82N barrier layer. surface morphology the MQW is observed atomic force microscope (AFM), indicates presence islands several tens nanometers in height surface....
Micro light-emitting diode (LED (LED) is considered as a promising next-generation display technology, owing to its superior performances such high efficiency and fast response. Although GaN-based Micro-LED mainly used light source, it can be utilized photodetector well due crystal structure material properties. This dual function enables realize the monolithic integration of source photodetector, making advantageous in visible communication (VLC) applications. In this paper, new integrated...