A5031349926- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Advanced Photocatalysis Techniques
- Acoustic Wave Resonator Technologies
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Photonic and Optical Devices
- Luminescence Properties of Advanced Materials
- Silicon Nanostructures and Photoluminescence
- Plasma Diagnostics and Applications
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies
- Anodic Oxide Films and Nanostructures
- Mechanical and Optical Resonators
- 2D Materials and Applications
- Perovskite Materials and Applications
- Graphene research and applications
- Radiation Detection and Scintillator Technologies
- Organic Light-Emitting Diodes Research
- Photocathodes and Microchannel Plates
- Advanced Sensor and Energy Harvesting Materials
Nanjing University
2016-2025
Collaborative Innovation Center of Advanced Microstructures
2010-2024
North University of China
2023
Southwest Jiaotong University
2023
Massachusetts Institute of Technology
2020
Yangzhou University
2012-2018
Hankou University
2017
Chongqing University of Posts and Telecommunications
2017
Tiangong University
2016
Zhengzhou University of Light Industry
2016
An excellent hybrid III‐nitride/nanocrystal nanohole light‐emitting diode (h‐LED) has been developed utilizing nonradiative resonant energy transfer (NRET) between violet/blue emitting InGaN/GaN multiple quantum wells (MQWs) and various wavelength nanocrystals (NCs) as color‐conversion mediums. MQWs are fabricated into nanoholes by soft nanoimprint lithography to minimize the separation NCs. A significant reduction in decay lifetime of excitons structure observed a result NRET from nitride...
Abstract Vertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga 2 O 3 arrays an average diameter/height of 110/450 nm been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has depositing interdigital Ti/Au electrodes on arrays. The PD exhibits ∼10 times higher...
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality ~ 0.3 nm roughness of the 5 × μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> anode recessed surface. Supported by flat recess surface and field plate design. When anode-to-cathode spacing is 30 μm, physical...
Micro-light emitting diodes (Micro-LEDs) based on III-nitride semiconductors have become a research hotspot in the field of high-resolution display due to its unique advantages. However, edge effect caused by inductively coupled plasma (ICP) dry etching Micro-LEDs significant with respect decreased chip size, resulting great reduction device performance. In this article, sector-shaped GaN-based blue are designed and fabricated. Additionally, performance different size passivation...
Solar-driven photocatalytic CO2 conversion is a promising strategy to alleviate the energy crisis and reduce level of emissions. In this study, GaN@β-Ga2O3 core–shell nanowire (NW) arrays were prepared via thermal oxidation GaN NWs, their reduction performance was investigated. NWs exhibited superior activity compared β-Ga2O3 under simulated sunlight irradiation. The average CO production rate reached ∼447.30 μmol g–1 h–1 within 3 h. process further enhanced using with Ag nanoparticles ∼18...
Energy issues, including energy generation, conversion, transmission and detection, are fundamental factors in all systems. In micro- nanosystems, dealing with these issues requires novel nanostructures precise technology. However, both concept setup not well established yet the microsystems, especially for those nanometer scale. Here we demonstrate electromagnetic nanocoils 100 nanometers diameter based on uniform periodic InGaN nanoring arrays grown patterned GaN surfaces by Nanoscale...
In this paper, the relationship between GaN exciton energy and temperature was studied with high-quality strain-free epilayers. The traditional Varshni’s model Bose-Einstein are empirical models that lack consideration of physical mechanisms, which makes their have poor applicability in wide band gap materials. Consider interaction electrons phonons, we use singular functions, linear functions power to express phonon density GaN, 2BE, single-linear, power-law-delta power-law-v proposed. All...
In this paper, we investigate the relationship between GaN exciton energy and temperature by using high-quality, strain-free epilayers. Traditional models, such as Varshni’s model Bose–Einstein model, are primarily based on empirical fitting give little or no consideration to electron–phonon interactions, which prevents them from accurately calculating over a wide range. Considering interaction of electrons phonons, use singular functions, linear functions power express phonon density GaN,...
Energy issues, including energy generation, conversion, transmission and detection, are fundamental factors in all systems. In micro- nanosystems, dealing with these issues requires novel nanostructures precise technology. However, both concept setup not well established yet the microsystems, especially for those at nanometer scale. Here, we demonstrate electromagnetic nanocoils 100 nm diameters based on uniform periodic InGaN nanoring arrays grown patterned GaN surfaces using nanoscale...
In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p-n</i> junction termination (RPN). The SBD has current output of 1 kA/cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{F}=2.5$ </tex-math></inline-formula> V, low...
Abstract Self-powered ultraviolet (UV) photodetectors (PDs) are critical for future energy-efficient optoelectronic systems due to their low energy consumption and high sensitivity. In this paper, the vertically aligned β -Ga 2 O 3 nanotube arrays (NTs) have been prepared on GaN/sapphire substrate by thermal oxidation process combined with dry etching technology, applied in UV photoelectrochemical (PEC-PDs) first time. Based large specific surface area of NTs substrates solid/liquid...
LEDs on Si offer excellent potential of low cost manufacturing for solid state lighting and display, taking advantage the well-developed IC technologies silicon. In this paper, we report how performance grown can be improved. Multiple quantum well InGaN LED structure was patterned silicon substrates circular 160 µm in radius were processed. Fabricated then transferred to an electroplated copper substrate with a reflective mirror inserted by double-flip transfer process, improve light...
Abstract The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based have been fabricated by a soft UV-curing nano-imprint lithography and top-down etching technique, which improve the incident photon (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). More significantly, turn-on voltage...
We fabricated p-i-n tunnel junction (TJ) contacts for hole injection on c -plane green micro-light-emitting diodes (micro-LEDs) by a hybrid growth approach using plasma-assisted molecular beam epitaxy (PA-MBE) and metal–organic chemical vapor deposition (MOCVD). The TJ was formed an MBE-grown ultra-thin unintentionally doped InGaN polarization layer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:msup> <mml:mi mathvariant="normal">n</mml:mi>...
Abstract Ultraviolet (UV) photodetectors have been fabricated on a graphene/4H‐SiC wafer. In this device, the electrical doping in graphene layer, under gate, is realized by changing gate voltage while optical layer outside region through photogenerated carrier injection from SiC, laser excitation at 325 nm. This kind of dual modulation and electric fields ultimately results formation planar n–p–n or n–n–n junction layer. The photoresponse demonstrate that formed negative voltage,...
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention. Many studies focused on optimizing breakdown voltage (BV) of device, with a particular emphasis achieving ultra-high (UHV, >10 kV) applications. However, another important question arises: Can device maintain BV 10 kV while having low turn-on (Von)? In this study, we demonstrate fabrication UHV SBDs sapphire exceeding kV. Moreover, by utilizing double anode (DBA)...
Two-inch Ga2O3 films with ( )-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga2O3 a smooth surface has higher crystal quality, and the Raman spectra reveal very small residual strain in epitaxy compared bulk single crystal. The optical transmittance is than 80% visible near-UV regions, bandgap energy calculated to be 4.9 eV.
Abstract ( <?CDATA $\bar 2$?> <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover> <mml:mn>2</mml:mn> <mml:mo>ˉ</mml:mo> </mml:mover> </mml:math> 01)-oriented β-Ga 2 O 3 films have been grown on (0001) sapphire substrates using the halide vapor phase epitaxy method. The as-grown exhibit highly textured with domain-like surface morphologies and root-mean-square roughness is measured at 6.2 nm atomic force microscopy. microstructure characteristics of film...
The electrical and optical performances of N-face GaN-based light-emitting diodes (LEDs) with polarization-induced p-type doping are investigated theoretically. In comparison the polarization-doped metal-face LED, one exhibits significant improvements in hole injection efficiency electroluminescence intensity when applied forward voltage exceeds a certain value. Simultaneously, reversed quantum confined Stark effect is observed LED. detailed physical mechanisms explained terms calculated...