A5026817851- 2D Materials and Applications
- Graphene research and applications
- Molecular Junctions and Nanostructures
- MXene and MAX Phase Materials
- Perovskite Materials and Applications
- Surface and Thin Film Phenomena
- Advancements in Battery Materials
- nanoparticles nucleation surface interactions
- Quantum Dots Synthesis And Properties
- Semiconductor materials and devices
- Quantum and electron transport phenomena
- Chalcogenide Semiconductor Thin Films
- Nanowire Synthesis and Applications
- Magnetic properties of thin films
- Force Microscopy Techniques and Applications
- Advanced Battery Materials and Technologies
- Advanced Chemical Physics Studies
- Mechanical and Optical Resonators
- Advanced Memory and Neural Computing
- Electrocatalysts for Energy Conversion
- Carbon Nanotubes in Composites
- ZnO doping and properties
- Electronic and Structural Properties of Oxides
- Boron and Carbon Nanomaterials Research
- Graphene and Nanomaterials Applications
Shanghai Normal University
2015-2024
University of Electronic Science and Technology of China
2021
Chongqing University
2021
Shenzhen University
2021
Zhengzhou University
2021
University of Hong Kong
2016-2018
City University of Hong Kong, Shenzhen Research Institute
2016
McGill University
2015
Material Physics Center
2015
Beijing Computational Science Research Center
2012
Abstract Highly efficient conductors are strongly desired because they can lead to higher working performance and less energy consumption in their wide range applications. However, the improvements on electrical conductivities of conventional limited, such as purification growing single crystal metals. Here, by embedding graphene metals (Cu, Al, Ag), trade‐off between carrier mobility density is surmount graphene, realize high electron simultaneously through elaborate interface design...
We report a first-principles theoretical approach for analyzing linear and circular photogalvanic effects (PGEs) based on density functional theory within the nonequilibrium Green's function formalism. Using this we investigate PGE phenomena in monolayer black phosphorus (MBP) doped with sulfur atoms. The impurity doping breaks space inversion symmetry of pristine MBP, leading to Cs mirror reflection plane normal zigzag direction MBP lattice. Governed by symmetry, is induced both armchair...
The structural, mechanical and electronic properties of the MoSSe/WSSe van der Waals (vdW) heterostructure under various degrees horizontal vertical strain are systematically investigated based on first-principles methods. It is found that vdW most stable AB stacking a direct band gap semiconductor exhibits type-II alignment, which demonstrates an effective separation photogenerated electron-hole pairs increases their lifetime accordingly. high angle-dependent Young's modulus normal...
Photodetectors based on two-dimensional materials have shown impressive performance including fast and broadband photoresponse high responsivity.
A self-powered, visible-blind and ultraviolet polarized photodetector driven by the photogalvanic effect based on MgBr<sub>2</sub>/CdCl<sub>2</sub> heterostructure war proposed, showing an extinction ratio of up to 280.
Self-powered phosphorene-based photodetectors driven by photogalvanic effects are proposed theoretically.
Abstract Graphene is considered a promising reinforcement to improve the electrical conductivity of metals because its excellent intrinsic conductivity. However, graphene/Al matrix composites with enhanced have not yet been reported. In this work, it attempted understand factors influencing graphene embedded in an Al by adjusting interfacial structure and composition. By sandwiching (Gr) or oxide (GO) either pristine passivated foils, three kinds typical composite interfaces are successfully...
Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report theoretical investigation of nonequilibrium spin injection spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, two-dimensional magnetic tunneling structures. We investigate physical properties such as the efficiency, tunnel magnetoresistance ratio, currents, charge currents transmission coefficients function...
The photogalvanic effect (PGE) occurring in noncentrosymmetric materials enables the generation of an open-circuit voltage that is much larger than bandgap, making it rather attractive solar cells. However, magnitude PGE photocurrent usually small, which severely hampers its practical application. Here we propose a mechanism to largely enhance by mechanical strain based on quantum transport simulations for two-dimensional nickel-phosphorene-nickel photodetector. A broadband governed...
Pure spin-current is of central importance in spintronics. Here we propose a two-dimensional (2D) spin-battery system that delivers pure without an accompanying charge-current to the outside world at zero bias. The principle roots photogalvanic effect (PGE), and has good operational stability against structural perturbation, photon energy other materials detail. device numerically implemented 2D material phosphorene as example, first principles calculations give excellent qualitative...
Semiconducting monolayer $\mathrm{Mo}\mathrm{Si}$${}_{2}$$\mathrm{N}$${}_{4}$ and $\mathrm{WSi}$${}_{2}$$\mathrm{N}$${}_{4}$ have recently been fabricated a number of two-dimensional (2D) materials with the same chemical formula symmetry predicted, mechanical, optical, thermoelectric properties which investigated. However, research regarding device applications this 2D family very limited so far. Here, we propose photodetector based on...
Spin-polarized photocurrent as a function of the polarization angle under illumination with linearly polarized light.
The photogalvanic effect in ferroelectric (FE) materials attracts considerable interest solar cells, polarization-sensitive photodetection, and nonvolatile memory applications. However, narrow-band-gap FE that cover the full spectrum are currently rare, there is still room to enhance light-polarization sensitivity improve switching ratio for optoelectronic devices. Here, we investigate induced by elliptically polarized light ($<1.6$ eV)...
Using density functional theory (DFT), we investigated the energy-storage capabilities of a two-dimensional TiSe monolayer for applications anode material Li/Na/K-ion batteries. The showed high thermodynamic stability at 800 K according to ab initio molecular dynamics (AIMD) simulation. ion-diffusion barrier was estimated be 0.29/0.36/0.33 eV Li/Na/K, respectively, indicating high-rate capacity this material. theoretical specific 422.63 mA h g-1 with an energy 1000.19, 802.30, and 802.41 mW...
Out-of-plane spin tunneling through the two-dimensional (2D) van der Waals ${\mathrm{CrI}}_{3}$ multilayer has recently been deeply explored, and giant magnetoresistance achieved in various magnetic junctions (MTJs) via control of interlayer antiferromagnetic coupling by both electric fields. In contrast, knowledge in-plane spin-transport properties 2D is currently very limited. Here, based on quantum transport simulations, we study photocurrent a MTJ with bilayer/monolayer/bilayer...