While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically not suited for high-voltage ESD due to their inherently low holding voltage and thus vulnerability latch-up threat. In this letter, a new high dual-direction SCR (NHHVDDSCR) with small area optimized topology is developed in 0.18-μm CMOS technology. The results of the NHHVDDSCR other devices measured from transmission line pulsing compared discussed. It shown that can...

Abstract Reducing trigger voltage has always been a research hotspot in low-voltage electrostatic discharge (ESD) protection applications for integrated circuit. Thus, novel low leakage silicon-controlled rectifier (LTVLLSCR) ESD proposed. The proposed device uses PMOS connected with the SCR to reduce and gate can be applied supply further current. operating principle physical mechanism of were discussed by Human Body Model simulation. characteristics verified 55 nm CMOS process....

In this paper, an enhanced modified lateral silicon-controlled rectifier (EMLSCR) has been proposed and demonstrated. Compared with the traditional MLSCR, EMLSCR possesses a lower trigger voltage of 7.0 V as well higher robustness, making it very suitable for electrostatic discharge (ESD) protection 2.5-V/3.3-V/5-V IOs in advanced 65-nm epitaxial CMOS technology. Additionally, improved transmission line pulsing (TLP) measurement strategy by adopting TLP pulses various rise time put forward...

The diode-triggered silicon-controlled rectifier (DTSCR) is an important device for the electrostatic discharge (ESD) protection of low-voltage integrated circuits, and its trigger voltage determined by forward turn-on diode string drops on parasitic resistors metal interconnects. For conventional DTSCR, are often negligible so triggering mainly string, which decreases with increasing temperature due to inherited negative coefficient. In this paper, improved novel called thermal-stable DTSCR...

In this brief, two novel diode-triggered siliconcontrolled rectifiers (DTSCRs) with fast turn-on speed have been presented. By embedding current gain amplifier modules (i.e., Sziklai pair and Darlington pair) into the conventional DTSCR, of parasitic bipolar junction transistors (BJTs) on silicon-controlled rectifier (SCR) path in new devices becomes much larger than that counterpart, thus resulting a faster better quasi-static I-V characteristics. As such, triggering characteristic DTSCR...

In this article, a novel voltage divider trigger silicon-controlled rectifier (VDTSCR) with low and leakage current for electrostatic discharge (ESD) protection applications has been proposed verified in 65-nm epitaxial CMOS process. The structure formed by an nMOS is introduced to the structure. composed of two series capacitors can control turn-on nMOS, (SCR) device reduce device. Such triggering fully embedded saving area. measurement results show that achieve 2.88 V, 120 pA, second...

In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing N+/P-ESD diode and optimizing the SCR layout, both triggering current-discharging paths of new become much shorter than prior arts, thus generating better clamping ability, faster turn-on speed, lower overshoot voltage. As a result, human body model (HBM) robustness increases by 19%, 46%, 267% proposed device with one, two, three...

Gate-grounded n-channel MOSFET (GGNMOS) has been widely used in electrostatic discharge (ESD) protection applications. In this letter, an enhanced GGNMOS, called the EGGNMOS, is proposed and demonstrated. The new device same topology as conventional except that a few P+ regions are being added to N+ guard ring (NGR). This novel approach enables formation of parasitic silicon-controlled rectifiers (SCR's), thus, resulting much higher current handling capability EGGNMOS than GGNMOS under...

In this paper, a compact and self-isolated dual directional silicon-controlled rectifier (CSDDSCR) developed in single N-well has been proposed demonstrated. Without using the P-well, N-type isolation structure as well an auxiliary trigger component, which are normally required traditional DDSCR, novel CSDDSCR possesses very high area-efficiency robustness of ~8.81 V/$\mu$ m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . It is also...

The narrow design window in FinFET process has put forward very strict demands on the clamping voltage of input–output (I/O) protection devices rail-based electrostatic discharge (ESD) networks. In this article, a novel all-directional diode-triggered silicon-controlled rectifier (AD-DTSCR) with superior ability is proposed. Unlike widely adopted optimization work within one single finger only, proposed AD-DTSCR realized secondary ESD properties between multiple fingers during scaling first....

Two high holding voltage silicon controlled rectifiers (SCRs) with segmented layout for high‐robust ESD protection are proposed, which called SeSCR (segmented SCR) and anti‐SeSCR (anti‐segmented SCR), implemented in a 0.6 μm on insulator (SOI) process. The transmission line pulse (TLP) characterisation results show that the of proposed structures can be elevated adjusted new topologies different width segmentations specific purposes. Meanwhile, equivalent schematics mechanisms SCRs also discussed.

In advanced charged device model (CDM) protection engineering, it is necessary to provide dedicated dual-directional electrostatic discharge (ESD) between input/output (I/O) and ground (GND) the large amount of charge stored in silicon substrate efficiently. This letter presents two improved bidirectional low-voltage silicon-controlled rectifiers (BLVSCR-type1 BLVSCR-type2), which are composed diode-triggered SCRs opposite polarity parallel. By improving structure metal connection,...

In this Letter, an enhanced bidirectional modified lateral silicon‐controlled rectifier (EBMLSCR) is proposed for advanced dual‐directional electrostatic discharge (ESD) protection applications. The ESD characteristics of the novel EBMLSCR and conventional (BMLSCR) are measured using transmission line pulsing tester. Compared with BMLSCR, owns a lower trigger voltage down to 7.7 V, higher failure current up 6.5 A, suitable holding as well same superior leakage current. Based on these...

Typical SCR with stripe layout style is modified into segmented one in order to tune the SCR's holding voltage for ESD protection different operation domain. SCRs and ratio were made, according TLP test results, most proper high selected among them. By delicate design choosing right segmentation pattern ratio, of obviously lifted a level over 30 V, enough value obtain latch-up immunity.

The turn-on speed of electrostatic discharge (ESD) protection devices is very important for the ultrathin gate oxide. A double trigger silicon controlled rectifier device (DTSCR) can be used effectively ESD because it turn on relatively quickly. process DTSCR first studied, and a formula calculating time derived. It found that determined mainly by base transit parasitic p-n-p n-p-n transistors. Using variation lateral doping (VLBD) structure reduce time, novel with VLBD (VLBD_DTSCR) proposed...

A new structure of a lateral n-MOST and level-shifting with multiply metal rings (MMRs) by divided RESURF technique have been proposed. The device electrical performances the are analyzed simulated MEDICI. In comparison to floating field plates (MFFPs) used before, stated here improves reliability diminishes voltage difference between power supply high-side gate driver output terminal structure, which is also that input driver. maximal in this paper 30% lower than before. Therefore, good...

Gate-grounded N-channel MOSFET (GGNMOS) has been extensively used for on-chip electrostatic discharge (ESD) protection. However, the ESD performance of conventional GGNMOS is significantly degraded by current crowding effect. In this paper, an enhanced with P-base layer (PB-NMOS) are proposed to improve robustness in BCD process without increase layout area or additional layer. TCAD simulations carried out explain underlying mechanisms that utilizing can effectively restrain crowing effect...

A effective method to enhance the holding voltage of LVTSCR for electrostatic discharge (ESD) protection applications has been proposed and verified in a 55 nm epitaxial CMOS process. The improves by removing STI NW adjusting NMOS gate length. In addition, it can provide an good robustness ESD protection. Measured results show that be improved 66% approximately.

An improved lateral double‐diffused MOS silicon‐controlled rectifier (ILDMOS‐SCR) for high‐voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a 0.18 µm 5 V/24 V BCD process. The (LDMOS‐SCR) is constructed by adding gated P‐type/intrinsic/N‐type (PIN) diode into conventional LDMOS‐SCR. With part of the ESD current discharges from surface PIN path, ILDMOS‐SCR achieves high holding voltage 30 as well failure 10.04 A, which evaluated to pass 15 KV...

A new self-triggered stacked silicon-controlled rectifier (SCR) structure (STSSCR) for on-chip electrostatic discharge (ESD) protection in a 0.35μm CMOS is proposed. The proposed SCR consists of modified lateral (MLSCR) and multiple double trigger (DTSCR). experimental results show that SBSSCR has stable voltage an adjustable holding voltage. decided by the number DTSCR.

A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line switching model IC is described. The structure and properties device are analyzed simulated. experimental results have verified that can realize function, be controlled by logic signal get 14V supply. Using this save cell area, reduce consumption circuit, make control easily enough large output voltage gate driver as well.

For robust high-voltage (HV) electrostatic discharge (ESD) protection engineering, such as 8-KV or 15-KV ESD target, the silicon-controlled rectifiers (SCRs) with high holding voltage are needed to mitigate latch-up risk. However, when implemented in multifinger layout configuration for satisfying requirement, these devices may encounter deterioration problems. In this article, has been explored by theoretical analysis and experimental verification. The transmission line pulsing (TLP)...

The trigger voltage of the HBT device is important for ESD protection. A method adjusting SiGe Heterojunction Bipolar Transistor (HBT) proposed in this paper. simulation and experiment results show that can be simply adjusted by varying emitter junction area.

In this paper, an improved low voltage triggered silicon-controlled rectifier (LVTSCR) for electrostatic discharge protection is proposed. By carefully optimizing the electric field distribution at junction of P-WELL and N-WELL in LVTSCR, holding enhanced LVTSCR (ELVTSCR) can be effectively increased to improve latch-up immunity. TCAD simulation indicates that compared with traditional proposed ELVTSCR has higher adjustable as well comparable trigger voltage, making it suitable provide ESD...