A5048080785- Electrostatic Discharge in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor materials and devices
- Phytochemistry and Biological Activities
- Ginseng Biological Effects and Applications
- Multiferroics and related materials
- Natural product bioactivities and synthesis
- Biosensors and Analytical Detection
- Advanced Biosensing Techniques and Applications
- Engineering and Test Systems
- Smart Grid and Power Systems
- Medicinal Plants and Bioactive Compounds
- IoT Networks and Protocols
- Ferroelectric and Piezoelectric Materials
- Advanced biosensing and bioanalysis techniques
- Herbal Medicine Research Studies
- Power Systems and Renewable Energy
- Pharmacological Effects of Natural Compounds
- Advanced Optical Sensing Technologies
- Medicinal Plant Pharmacodynamics Research
- Wireless Body Area Networks
- Advanced Algorithms and Applications
- Physical Unclonable Functions (PUFs) and Hardware Security
Chengdu University
2020-2024
Beijing Institute of Technology
2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2017-2023
University of Electronic Science and Technology of China
2014-2023
University of Dundee
2016
NYU Langone Health
2016
Institute of Agricultural Machinery
2009
Randomly distributed topological defects created during the spontaneous symmetry breaking are fingerprints to trace evolution of symmetry, range interaction, and order parameters in condensed matter systems. However, effective mean manipulate into ordered form is elusive due protection. Here, we establish a strategy effectively align domain networks hexagonal manganites through mechanical approach. It found that nanoindentation strain gives rise threefold Magnus-type force distribution,...
In this paper, an enhanced modified lateral silicon-controlled rectifier (EMLSCR) has been proposed and demonstrated. Compared with the traditional MLSCR, EMLSCR possesses a lower trigger voltage of 7.0 V as well higher robustness, making it very suitable for electrostatic discharge (ESD) protection 2.5-V/3.3-V/5-V IOs in advanced 65-nm epitaxial CMOS technology. Additionally, improved transmission line pulsing (TLP) measurement strategy by adopting TLP pulses various rise time put forward...
The diode-triggered silicon-controlled rectifier (DTSCR) is an important device for the electrostatic discharge (ESD) protection of low-voltage integrated circuits, and its trigger voltage determined by forward turn-on diode string drops on parasitic resistors metal interconnects. For conventional DTSCR, are often negligible so triggering mainly string, which decreases with increasing temperature due to inherited negative coefficient. In this paper, improved novel called thermal-stable DTSCR...
In this brief, two novel diode-triggered siliconcontrolled rectifiers (DTSCRs) with fast turn-on speed have been presented. By embedding current gain amplifier modules (i.e., Sziklai pair and Darlington pair) into the conventional DTSCR, of parasitic bipolar junction transistors (BJTs) on silicon-controlled rectifier (SCR) path in new devices becomes much larger than that counterpart, thus resulting a faster better quasi-static I-V characteristics. As such, triggering characteristic DTSCR...
In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing N+/P-ESD diode and optimizing the SCR layout, both triggering current-discharging paths of new become much shorter than prior arts, thus generating better clamping ability, faster turn-on speed, lower overshoot voltage. As a result, human body model (HBM) robustness increases by 19%, 46%, 267% proposed device with one, two, three...
In this article, a robust high-holding voltage silicon-controlled rectifier (HHSCR) is implemented and realized in 0.18-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> BCD process for on-chip electrostatic discharge (ESD) protection. The proposed HHSCR was constructed by embedding NMOSFET the p-well of modified lateral (MLSCR). Benefiting from shunting effect embedded path, achieved with relatively high robustness. Transmission line pulse (TLP) test...
A simple, sensitive and reliable reversed phase Rapid Resolution Liquid Chromatography (RRLC) method was developed validated for six biologically active compounds (salidroside, tyrosol, rosarin, rosavin, rosin rosiridin) in Rhodiola rosea L. roots powder extracts. The uses a Phenomenex C18 (2)-HST column at 40 degrees C with neutral gradient system mobile (H20 acetonitrile), flow rate of 1.0 mL/min, UV detection wavelengths set 205 254 nm, simultaneously. Baseline separation the achieved...
Gate-grounded n-channel MOSFET (GGNMOS) has been widely used in electrostatic discharge (ESD) protection applications. In this letter, an enhanced GGNMOS, called the EGGNMOS, is proposed and demonstrated. The new device same topology as conventional except that a few P+ regions are being added to N+ guard ring (NGR). This novel approach enables formation of parasitic silicon-controlled rectifiers (SCR's), thus, resulting much higher current handling capability EGGNMOS than GGNMOS under...
The narrow design window in FinFET process has put forward very strict demands on the clamping voltage of input–output (I/O) protection devices rail-based electrostatic discharge (ESD) networks. In this article, a novel all-directional diode-triggered silicon-controlled rectifier (AD-DTSCR) with superior ability is proposed. Unlike widely adopted optimization work within one single finger only, proposed AD-DTSCR realized secondary ESD properties between multiple fingers during scaling first....
The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed physical failure analysis breakdown an enhanced modified lateral silicon-controlled rectifier-based discharge (ESD) device. Direct visualization conductive metal filaments doped substrate has been achieved by high-resolution transmission electron microscopy. locations these induced...
In advanced charged device model (CDM) protection engineering, it is necessary to provide dedicated dual-directional electrostatic discharge (ESD) between input/output (I/O) and ground (GND) the large amount of charge stored in silicon substrate efficiently. This letter presents two improved bidirectional low-voltage silicon-controlled rectifiers (BLVSCR-type1 BLVSCR-type2), which are composed diode-triggered SCRs opposite polarity parallel. By improving structure metal connection,...
Direct bidirectional current discharge paths between input/output (I/O) and ground (GND) are imperative to achieve robust charged device model (CDM) protection for very stringent design window in advanced low-voltage (LV) processes. In this brief, a compact fast response dual-directional silicon-controlled rectifier (CFR-DDSCR) has been proposed. Using P-electrostatic (ESD) implantation layer implement each diode-triggered (SCR) within only one n-well, the inherent defect of prior art (i.e.,...
In this Letter, an enhanced bidirectional modified lateral silicon‐controlled rectifier (EBMLSCR) is proposed for advanced dual‐directional electrostatic discharge (ESD) protection applications. The ESD characteristics of the novel EBMLSCR and conventional (BMLSCR) are measured using transmission line pulsing tester. Compared with BMLSCR, owns a lower trigger voltage down to 7.7 V, higher failure current up 6.5 A, suitable holding as well same superior leakage current. Based on these...
Echinacea angustifolia and E. purpurea are commonly used in North America for their anti-bacterial effects. Flos Lonicerae, Radix Scutellaria Fructus Forsythiae traditional Chinese medicinal herbs the treatment of complaints such as pneumonia, acute upper respiratory tract infection, bronchitis. A reproducible, simple, reliable rapid resolution liquid chromatographic (RRLC) method has been developed to analyze extracts products formulated containing angustifolia, purpurea, Scutellariae...
Gate-grounded N-channel MOSFET (GGNMOS) has been extensively used for on-chip electrostatic discharge (ESD) protection. However, the ESD performance of conventional GGNMOS is significantly degraded by current crowding effect. In this paper, an enhanced with P-base layer (PB-NMOS) are proposed to improve robustness in BCD process without increase layout area or additional layer. TCAD simulations carried out explain underlying mechanisms that utilizing can effectively restrain crowing effect...
An improved lateral double‐diffused MOS silicon‐controlled rectifier (ILDMOS‐SCR) for high‐voltage electrostatic discharge (ESD) protection applications has been proposed and verified in a 0.18 µm 5 V/24 V BCD process. The (LDMOS‐SCR) is constructed by adding gated P‐type/intrinsic/N‐type (PIN) diode into conventional LDMOS‐SCR. With part of the ESD current discharges from surface PIN path, ILDMOS‐SCR achieves high holding voltage 30 as well failure 10.04 A, which evaluated to pass 15 KV...
Two Rapid Resolution Liquid Chromatography (RRLC) methods have been developed and validated for simultaneous quantification of eight major ginsenosides from Panax species, namely, R1, Rg1, Re, Rf, Rb1, Rb2, Rc, Rd, flavonoids Epimedium epimedins A, B, C icariin. The analyses were performed using an Agilent 1200 series RRLC system with Phenomenex Luna C18-HST Zorbax Eclipse XDB columns. separation was a gradient mobile phase A (pure water) B (acetonitrile) at flow rate 1.0 mL/min 2.5 mL/min,...
The negative holding voltage of high-voltage (HV) dual-directional silicon-controlled rectifier (DDSCR) is usually attenuated to a very low level due the grounded guard ring, which has been ignored by many researchers nowadays. In this brief, novel symmetrical DDSCR (SDDSCR) proposed suppress deterioration DDSCR's voltage. By introducing diffusion resistor into p-type ring (PGR), experimental results indicated that reverse parasitic SCR path associated with PGR suppressed effectively. Thus,...
For robust high-voltage (HV) electrostatic discharge (ESD) protection engineering, such as 8-KV or 15-KV ESD target, the silicon-controlled rectifiers (SCRs) with high holding voltage are needed to mitigate latch-up risk. However, when implemented in multifinger layout configuration for satisfying requirement, these devices may encounter deterioration problems. In this article, has been explored by theoretical analysis and experimental verification. The transmission line pulsing (TLP)...
In this paper, an improved low voltage triggered silicon-controlled rectifier (LVTSCR) for electrostatic discharge protection is proposed. By carefully optimizing the electric field distribution at junction of P-WELL and N-WELL in LVTSCR, holding enhanced LVTSCR (ELVTSCR) can be effectively increased to improve latch-up immunity. TCAD simulation indicates that compared with traditional proposed ELVTSCR has higher adjustable as well comparable trigger voltage, making it suitable provide ESD...
A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The EGDTSCR is constructed by adding two gated diodes into conventional ESD modified lateral (MLSCR). With shunting effect of surface diode path, EGDTSCR, with width 50 μm, exhibits higher failure current ( i.e. , 3.82 A) as well holding voltage 10.21 V) than MLSCR.
In this paper, a novel low-voltage triggered silicon-controlled rectifier (NLVTSCR) with low trigger voltage and higher holding is proposed implemented in 28nm CMOS process. The NLVTSCR the TLP test has an adjustable high from 3.44 V to 4.93 V. addition, it does not require any additional masks, making excellent candidate for 3.3V ESD protection. Compared conventional (LVTSCR), device provides than its counterpart.
In this paper, A novel high holding voltage dual-directional SCR (HHV-DDSCR) is proposed. The ESD I-V characteristics of HHV-DDSCR and DDSCR (dual-directional SCR) are simulated with the Sentaurus TCAD software. Compared DDSCR, new dramatically increases from 2V to 14V relatively stable trigger voltage, which can provide efficient protection for (HV) ICs. Besides, influence parasitic BJTs in on device performance has also been studied.