A5102974446- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Electronic and Structural Properties of Oxides
- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Graphene research and applications
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Thermoelectric Materials and Devices
- Multimodal Machine Learning Applications
- Dental Implant Techniques and Outcomes
- Nanowire Synthesis and Applications
- Advanced Electron Microscopy Techniques and Applications
- 2D Materials and Applications
- Domain Adaptation and Few-Shot Learning
- Orthopaedic implants and arthroplasty
- Quantum Dots Synthesis And Properties
- Bone Tissue Engineering Materials
Nankai University
2024
East China Normal University
2021-2022
Midwest Orthopaedic Research Foundation
2008
Abstract Paper, as a foldable, pollution-free, and low-cost material, has become suitable support substrate for producing flexible thermoelectric (TE) generators to realize waste heat recycling the application of human-powered electronic devices. We propose facile fabrication method modify cellulose paper with inorganic TE powders via vacuum filtration, making modified that possesses good properties. By connecting copper foils, paper-based (PTGs) are fabricated. The obtained PTG three units...
Direct atomic-scale observation of the local phase transition in metal dichalcogenides (TMDCs) is critically required to carry out in-depth studies their atomic structures and electronic features. However, structural aspects including crystal symmetries tend be unclear unintuitive real-time monitoring process. Herein, by using situ transmission electron microscopy, information about mechanism MoTe2 from hexagonal structure (2H phase) monoclinic (1T' driven sublimation Te atoms after a spike...
Abstract The increased complexity and scaling down of electronic devices lead to great challenges in extracting an interesting nanoscale area the device for transmission electron microscopy (TEM) characterization. traditional TEM sample preparation methods, such as electrolytic polishing, can not precisely process a specific device. Focused ion beam (FIB) technology is advanced situ specimen method TEM. FIB only locate position mill with resolution, but also manipulate controlled manner real...
Background and purpose We studied whether osseointegration fixation of plasma-sprayed titanium implants grafted with β-TCP granules (Ossaplast) can be improved by adding an osteogenic signal (Colloss E). The results were compared to fresh frozen morselized allograft without the Colloss E device.Methods 4 porous-coated Ti placed in proximal humeri each 10 dogs. All surrounded a 2.5-mm defect, which was with: (A) β-TCP, (B) β-TCP+20 mg E, (C) allograft, or (D) allograft+20 E. observation time...
Abstract Non-volatile memory (NVM) devices with non-volatility and low power consumption properties are important in the data storage field. The switching mechanism packaging reliability issues NVMs of great research interest. process NVM accompanied by evolution microstructure composition is fast subtle. Transmission electron microscopy (TEM) high spatial resolution versatile external fields widely used analyzing morphology, structures chemical compositions at atomic scale. various stimuli,...
The robustness of electrostatic sensitive devices is important in state-of-the-art silicon technology. However, the electrical breakdown-induced microstructure evolution remains unclear. In this work, we performed physical failure analysis breakdown an enhanced modified lateral silicon-controlled rectifier-based discharge (ESD) device. Direct visualization conductive metal filaments doped substrate has been achieved by high-resolution transmission electron microscopy. locations these induced...
We propose G2G, based on the global model of Generalized learning to solve Federated Domain Generalization (FedDG) task. FedDG aims collaboratively train a that can directly generalize unseen target domain without data sharing. Existing methods face challenges from both heterogeneity, arising imbalanced as well non-independent and identical distributions (non-IID) among all domains, heterogeneity due personalized requirements for client models. Also, these suffer unnecessary time cost...
In the advanced technology process, owing to low and tunable trigger voltage, diode-triggered SCRs (DTSCRs) are widely used in low-voltage applications with extremely narrow electrostatic discharge (ESD) design margins. The breakdown of DTSCRs ESD structure abnormal leakage current under transmission line pulsing stressing was studied this work. physical origins have been established through failure analysis (FA). mismatch thermal expansion coefficient local materials results redundant...
The direct synthesis of graphene with high-quality on semiconducting germanium (Ge) substrates has been developed recently, which provided a promising way to integrate semiconductors for the application electronic devices. However, defects such as grain boundaries (GBs) introduced during growth process have significant influence crystalline quality and performance related Therefore, investigation formation GBs in grown Ge substrate is essential optimizing graphene. Herein, mechanism...
As the complexity of integrated circuits increases, electrostatic discharge (ESD) protection devices become critical to reliability issues. However, physical failure analysis ESD is destructive and time-consuming. In this work, by using X-ray microscopy (XRM), we study abnormal change in leakage current diode-triggered silicon-controlled rectifiers (DTSCRs) structure under transmission line pulsing stressing. XRM nondestructive method showing in-depth morphology information devices. The...