A5087298747- 2D Materials and Applications
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thermal properties of materials
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- High-pressure geophysics and materials
- Advancements in Semiconductor Devices and Circuit Design
- Chalcogenide Semiconductor Thin Films
- MXene and MAX Phase Materials
- Advanced Electron Microscopy Techniques and Applications
- Machine Learning in Materials Science
- Perovskite Materials and Applications
- Conducting polymers and applications
- Graphene research and applications
- Neural Networks and Reservoir Computing
- Topological Materials and Phenomena
- Organic Electronics and Photovoltaics
- Copper Interconnects and Reliability
- Silicon and Solar Cell Technologies
- Advanced Sensor and Energy Harvesting Materials
- Gas Sensing Nanomaterials and Sensors
- Thermal Expansion and Ionic Conductivity
- Ga2O3 and related materials
Peking University
2025
East China Normal University
2018-2024
Center for High Pressure Science and Technology Advanced Research
2020-2022
Center for High Pressure Science & Technology Advanced Research
2022
Abstract Paper, as a foldable, pollution-free, and low-cost material, has become suitable support substrate for producing flexible thermoelectric (TE) generators to realize waste heat recycling the application of human-powered electronic devices. We propose facile fabrication method modify cellulose paper with inorganic TE powders via vacuum filtration, making modified that possesses good properties. By connecting copper foils, paper-based (PTGs) are fabricated. The obtained PTG three units...
Precise control over crystallinity and morphology of conjugated polymers (CPs) is essential for progressing organic electronics. However, manufacturing single-crystal thin films CPs presents substantial challenges due to their complex molecular structures, distorted chain conformations, unbalanced crystallization kinetics. In this work, we demonstrate a universal nanoconfined molecular-dipole orientating strategy craft high-quality variety CPs, spanning from traditional thiophene-...
Abstract Three‐dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low‐power and high‐performance computing in integrated circuits. Observing accurately measuring strain heterojunctions is critical to increasing carrier mobility improving device performance. Transmission electron microscopy (TEM) with high spatial resolution analytical capabilities provides technical support atomic‐scale measurement promotes significant progress mapping...
Abstract The increased complexity and scaling down of electronic devices lead to great challenges in extracting an interesting nanoscale area the device for transmission electron microscopy (TEM) characterization. traditional TEM sample preparation methods, such as electrolytic polishing, can not precisely process a specific device. Focused ion beam (FIB) technology is advanced situ specimen method TEM. FIB only locate position mill with resolution, but also manipulate controlled manner real...
Phonon engineering is a novel and effective approach to tailor the thermal conductivity for thermoelectric performance heat dissipation. In general, acoustic phonons rather than optical are dominant in heating carriers. Here we report an unprecedented large contribution, 47% overall, from low-frequency in-plane 2H molybdenum disulfide, revealed by low-wave-number high-pressure Raman technology assisted with first-principles calculations. The analysis of phonon dispersion curves Gr\"uneisen...
The graphene-like layered semiconductor indium selenide has recently attracted widespread attention owing to its large tunability of the electronic states by varying layer thickness, chemical doping, or strain. However, influence modulated inter- and intralayer bonding upon lattice change on optical electrical properties is still in infant stage. Here, we systematically investigate high-pressure behaviors phonon modes excitonic ε-InSe based measurements Raman, absorption, photoluminescence...
For the first time, on-state (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</inf> >0, V xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> > 0) time-dependent dielectric breakdown (TDDB) in FinFET technology is systematically studied. The assumption that kinetics of soft (SBD) would remain same and have no effect on electromigration (EM) not true using advanced physical characterization techniques (TEM/EDX/EELS), as well...
Abstract Two-dimensional (2D) transition metal dichalcogenides alloys are potential materials in the application of photodetectors over a wide spectral range due to their composition-dependent bandgaps. The study bandgap engineering is important for 2D devices. Here, we grow Mo 1− x W Se 2 on mica, sapphire and SiO /Si substrates by chemical vapor deposition (CVD) method. grown mica CVD method first time. Photoluminescence (PL) spectroscopy used investigate effects interlayer coupling force...
Intelligent systems have brought convenience to contemporary society. However, latency and poor-efficiency been urgent problems for intelligence systems. Here, an infrared (IR) intelligent system fusing a non-contact IR thermopile sensor array fabricated by microelectromechanical technology artificial neural network (ANN) algorithm is proposed, with the characteristics of high-efficiency low-latency. The based on designed near-sensor computing architecture, which can realize directly edge...
2D Transistors transition metal chalcogenide (TMDC) materials have recently attracted great interest in ultra-scaled chips. The current device structures, contact engineering, and doping methods of TMDC for scaling down performance optimization are summarized by Xing Wu, He Tian, Tian-Ling Ren, co-workers article number 2201916, who propose the Moore's law present a state-of-the-art compilation most sophisticated strategies developed to date.
Hafnia-based ferroelectrics with excellent scalability and complementary metal–oxide–semiconductor technology compatibility are potential materials for next-generation memory logic devices. Stabilizing the metastable ferroelectric phase in hafnia-based is critical realizing technological applications. Interface engineering a method to stabilize phase. However, role played by interface between metal electrode oxide remains unclear. In this work, typical Hf0.5Zr0.5O2 (HZO) film sandwiched...
The solid‐state‐based thermoelectric (TE) materials have attracted considerable interest for their potential application in energy conversion. In general, high‐frequency optical phonon modes are always thought to a negligible contribution thermal transport due short mean free path. Herein, the phonons effect bulk molybdenum diselenide (MoSe 2 ) is studied using advanced low‐wavenumber Raman spectroscopy with wide temperature range. It found that cubic anharmonicity dominant at low...
In the advanced technology process, owing to low and tunable trigger voltage, diode-triggered SCRs (DTSCRs) are widely used in low-voltage applications with extremely narrow electrostatic discharge (ESD) design margins. The breakdown of DTSCRs ESD structure abnormal leakage current under transmission line pulsing stressing was studied this work. physical origins have been established through failure analysis (FA). mismatch thermal expansion coefficient local materials results redundant...
In situ transmission electron microscopy is used to analyze the phase transition of Ag 2 Se nanoparticles with different size. The result provides a potential design toward low-temperature range thermoelectric materials through nanoengineering.
Two-dimensional (2D) materials possess exceptional electrical, mechanical, thermal, and optical properties, making them widely applicable in fields of electronics, energy, optoelectronics, medicine. The geometry 2D at the nanoscale, such as number layers, interlayer spacing, thickness layers are particular interest, they have great influence to properties material. Transmission electron microscopy (TEM) with atomic resolution is an ideal research method for materials. However, analyzing by...
Reliability issues of semiconductors devices are always related with defects accumulation. Repeatedly switching processes a semiconductor device could induce the accumulation which results in performance degradation. Bulk fin field-effect transistor (FinFET) devices, miniaturized three-dimensional structure, have more complex reliability mechanism that requires detailed research. In this experiment, failure analysis was studied on same batch FinFET suffered degradation aging tests at...
Mercury cadmium telluride compounds exhibit large tunability of nontrivial electronic states by modifying chemical composition, temperature, or pressure. Despite the growing interest in Hg1–xCdxTe, very little information currently exists on how their electrical properties are affected upon compression. Here, we systematically investigate high-pressure behaviors bulk Au-doped Hg0.781Cd0.219Te crystals with doping level close to Kane fermion point. A clear structure evolution path this...