Domingo I. García-Gutiérrez

ORCID: 0000-0001-6350-2161
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About
Contact & Profiles
Research Areas
  • Semiconductor materials and devices
  • Quantum Dots Synthesis And Properties
  • Advancements in Semiconductor Devices and Circuit Design
  • Chalcogenide Semiconductor Thin Films
  • Conducting polymers and applications
  • Semiconductor materials and interfaces
  • Supercapacitor Materials and Fabrication
  • Electron and X-Ray Spectroscopy Techniques
  • Perovskite Materials and Applications
  • Magnetic Properties and Synthesis of Ferrites
  • Advanced ceramic materials synthesis
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Advanced Photocatalysis Techniques
  • Electrospun Nanofibers in Biomedical Applications
  • Nanowire Synthesis and Applications
  • Carbon and Quantum Dots Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Ferroelectric and Negative Capacitance Devices
  • Electrocatalysts for Energy Conversion
  • Aluminum Alloys Composites Properties
  • Force Microscopy Techniques and Applications
  • Silicon Nanostructures and Photoluminescence
  • Advancements in Battery Materials
  • Copper Interconnects and Reliability
  • nanoparticles nucleation surface interactions

Universidad Autónoma de Nuevo León
2016-2025

Universidad Univer
2020

Monolith Semiconductor (United States)
2016

The University of Texas at Austin
2003-2008

Engie (United States)
2008

SVT Associates (United States)
2008

Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas
2007

Centro de Investigación en Materiales Avanzados
2007

Instituto de Física La Plata
2007

Consejo Nacional de Investigaciones Científicas y Técnicas
2007

Metal nanostructures, such as nanoparticles and nanowires, have been proposed building blocks for several applications in nanofabrication nanoelectronics. However, even when atmospheric corrosion is common metals, there a lack of information about the stability those nanostructures against phenomenon. Therefore, we decided to study silver nanowires synthesized by polyol method using poly(vinylpyrrolidone) (PVP) capping agent different techniques, including transmission electron microscopy...

10.1021/cm051532n article EN Chemistry of Materials 2005-10-26

Pt-Au bimetallic nanoparticles have been synthesized by the polyol method and stabilized with poly(vinylpyrrolidone) (PVP), modifying temperature of synthesis. Interesting structure changes were observed in as was varied. At lower temperatures no detected, but increased started to appear, commonly obtaining core-shell nanoparticles, always covered polymer. This originates modification optical response system UV-visible region. An absorption peak centered at 520 nm low (100-110 degrees C);...

10.1021/jp048114a article EN The Journal of Physical Chemistry B 2005-02-10

Using discrete, ultrafine alumina, highly dense transparent (71% real in‐line transmission, RIT , λ = 640 nm) ceramics were achieved with grain size as small 260 nm using standard SPS sintering. We show that use of La 3+ a dopant greatly reduces sensitivity to the sintering temperatures. Transparent alumina in large range temperatures, 1140°C < T 1200°C, thus providing better reliability and flexibility into fabrication sintered ceramic bodies.

10.1111/jace.12255 article EN Journal of the American Ceramic Society 2013-03-15

Lead sulfide (PbS) nanoparticles were synthesized by chemical methods with different sizes and capping ligands (oleic acid, myristic hexanoic acid), avoiding ligand exchange procedures, to study the effect of characteristics on their energy levels band gap values. Experimental results (UV-vis-NIR, Fourier transform infrared, Raman spectroscopies, cyclic voltammetry, transmission electron microscopy, loss spectroscopy) showed a marked influence nature electro-optical properties PbS very...

10.1021/acsomega.7b01451 article EN publisher-specific-oa ACS Omega 2018-01-11

Nanostructured hybrid materials based on the combination of semiconductor QDs and GO are promising candidates for different optoelectronic catalytic applications being able to produce such in solution will expand their possible range applications. In current work, capping ligand-exchange procedures have been developed replace lead oleate normally found surface PbS synthesized by popular hot-injection method. After process, water soluble, which makes them soluble most solutions....

10.3390/applnano6020007 article EN cc-by Applied Nano 2025-04-01

The channel mobility of the InP metal-insulator-semiconductor field-effect transistor (MISFET’s) was enhanced by incorporating a phosphorus-rich interfacial oxide between SiO2 gate dielectric and substrate. This grown using an indirect, plasma-enhanced chemical vapor deposition process followed same technique. structures, formed aluminum on SiO2, did not exhibit any hysteresis in its capacitance-voltage characteristic. An interface state density as low 8×1010 cm−2 eV−1 achieved for such MIS...

10.1063/1.95597 article EN Applied Physics Letters 1985-02-15

Low temperature (≤250 °C) deposition of aluminum oxide gate dielectric film using a new plasma enhanced metal-organic chemical vapor technique is described. With this technique, the substrate was not directly exposed to which minimizes radiation damage both and film. A dc potential used generate achieved at extremely low power (≤2 W) trimethylaluminum nitrous reactant sources. The films were found have resistivity ∼1014 Ω cm, constant 7.9±0.2, breakdown field ≥106 V/cm. linear dependence...

10.1063/1.332725 article EN Journal of Applied Physics 1983-09-01

There is a current need to develop low-cost strategies degrade and eliminate industrially used colorants discharged into the environment. Colorants natural water streams pose various threats, including: toxicity, degradation of aesthetics inhibiting sunlight penetration aquatic ecosystems. Dyes usually have complex aromatic molecular structures, which make them very stable difficult by conventional treatment systems. The results in this work demonstrated that heavy metal-resistant...

10.1371/journal.pone.0148430 article EN cc-by PLoS ONE 2016-02-01

In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition HfO2 on GaAs substrates. X-ray photoelectron spectroscopy (XPS) analysis revealed no significant reduction arsenic oxides upon using tetrakis(dimethyl-amino)hafnium [Hf(NMe2)4] as metallic precursor. However, XPS confirmed absence at interface sulfide-treated GaAs. High-resolution transmission electron microcopy verified a smooth between sulfur-passivated addition, frequency dispersion...

10.1063/1.2806190 article EN Applied Physics Letters 2007-11-05

In this work, we study the chemical and physical properties of interface between Al2O3 GaAs for different surface treatments GaAs. The interfacial layer high-κ substrate was studied using x-ray photoelectron spectroscopy (XPS) transmission electron microscopy (TEM). reduction in native oxide observed upon atomic deposition on nontreated trimethyl aluminum precursor. It also that sulfide treatment effectively mitigates formation as compared to hydroxylation NH4OH. electrical characteristics...

10.1063/1.2937404 article EN Applied Physics Letters 2008-06-02

One of the key challenges in critical dimension (CD) metrology is finding suitable dimensional calibration standards. The transmission electron microscope (TEM), which produces lattice-resolved images having scale traceability to SI (International System Units) definition length through an atomic lattice constant, has gained wide usage different areas CD calibration. such area force (CD-AFM) tip width To properly calibrate CD-AFM widths, errors process must be quantified. Although use TEM...

10.1117/1.jmm.15.4.044002 article EN Journal of Micro/Nanolithography MEMS and MOEMS 2016-10-13

In this letter, we report fabrication of self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor (MOS) field-effect transistors with atomic layer deposition Al2O3 gate dielectric directly on substrates using a simple ex situ wet clean GaAs. Thermal stability the stack was examined by monitoring frequency dispersion behavior MOS capacitors under different annealing conditions. A maximum drive current ∼4.5μA∕μm obtained for length 20μm at overdrive 2.5V. The threshold...

10.1063/1.2931708 article EN Applied Physics Letters 2008-05-19

Fabrication of nickel nanocrystal flash memories using a polymeric approach is presented. Heat treatment the poly (styrene-b-methyl methacrylate) block copolymer with molecular weight 67 000 g/mol followed by PMMA removal in an organic solvent created porous PS film 20-nm-diameter pores and total pore density ~6 times 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . A trilayer...

10.1109/led.2007.902612 article EN IEEE Electron Device Letters 2007-08-29

In this contribution, a synthetic procedure to obtain hybrid nanostructured material from biopolymer chitosan and spinel-metal-oxide nanoparticles is described. The MFe2O4 (M = Mn or Mg) magnetic were synthesized polymeric solid solution of cations chelated within matrix. Unlike other synthesis routes suggested in the literature, following made it possible materials with narrow particle size distribution, sizes ranging 1.2 8 nm, even at ratios chitosan/MFe2O4 3. obtained analyzed by...

10.1021/jp106811w article EN The Journal of Physical Chemistry C 2010-09-22
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