A model is presented for the development of stress during electromigration. Formally similar to a thermal model, it provides method calculating all components tensor and clearly couples vacancy transport evolution with boundary conditions that apply metal. Analytic solutions are discussed electromigration either normal or parallel plate. The solution plate used reinterpret x-ray microdiffraction experiments from literature. We find effective charge vacancies in pure polycrystalline aluminum...

An integrated simulator for chemical vapor deposition is introduced. In addition to reactor scale and feature simulators, it includes a "mesoscopic" with the typical length of die. It shown that "three‐scale" used proper extension "two‐scale" simulators consist simulation models. Moreover, demonstrated information provided on new scale, which no available from approach, as well important corrections results scale. This enables, instance, studies microloading. Thermally induced silicon...

Chemical mechanical polishing of copper is examined experimentally and theoretically as a function slurry flow rate the product applied wafer pressure relative sliding speed It observed that under constant tribological conditions, removal at any fixed value generally decreases increases. The increased cooling surface, result rate, used to explain this reduction in reaction rate. At it further does not necessarily increase monotonically with instead depends on particular values velocity,...

Is silicon dioxide a viscous liquid or an elastic solid at processing temperatures? Simple calculations using either assumption lead to gross discrepancies with experimental observations. This letter shows that plastic flow model resolves these discrepancies. Flow develops much sooner than predicted by linear viscoelastic model. Large deformations (<5%) are accommodated almost entirely flow. Small elastically depending on temperature.

The effect of pad surface characteristics on the thermal, tribological and kinetic attributes copper CMP was investigated. Three CMC D100 pads with very different micro-textures were generated using three CVD-coated diamond conditioning discs. Pad samples collected after polishing analyzed for their contact area topography confocal microscopy. area, density, asperity height increased increasing conditioner aggressiveness. Copper removal rates temperatures pressure sliding velocity all albeit...

In this study, an optical method using laser confocal microscopy was developed to measure the surface contact area and topography of pads under a dry static condition. A custom-made pad sample holder with sapphire window miniature load cell used collect images at controlled loads. By extracting black spots in collected images, summit density were obtained. The analysis post polishing (8,289×921 µm 2 ) showed that increased from 0.026 0.045% when pressure 4 psi further 0.059% 6 psi. also...

Both contact and non-contact methods are used to analyze surface properties of three types chemical mechanical planarization (CMP) pads: plain, X Y grooved, concentrically grooved. Optical interferometry is probe the pad without produce a height probability density function (PDF). The right hand contacting tail PDF often found be exponential for CMP pads decay length (λ) as measure abruptness can extracted. An incremental loading device developed response. A pad–wafer model based on...

A defect generation mechanism, namely, the grain-boundary Frenkel pair model, and corresponding diffusion mechanisms during electromigration are developed using atomic simulation techniques in Al Al–Cu. We contend that large numbers of interstitials vacancies exist at grain boundaries both contribute to mass transport. Cu preferentially segregates interstitial sites via a process reduces overall diffusivity due stronger Al–Cu binding. Predictions from our models excellent agreement with...

This study seeks to explain removal rate trends and scatter in thermal silicon dioxide PECVD tetraethoxysilane-sourced (PE-TEOS) CMP using an augmented version of the Langmuir-Hinshelwood mechanism. The proposed model combines chemical mechanical facets interlevel dielectric (ILD) hypothesizes that reaction temperature is determined by transient flash heating. agreement between data suggests main source apparent plotted as versus pressure times velocity competition thermochemical mechanisms....

The main features of the finite element semiconductor process simulator FEDSS are described, with emphasis on a recently added capability for generalized 2D oxidation impurity redistribution in oxide and silicon. Examples given that demonstrate ability program to oxidize various structures using model based steady-state oxidant diffusion incompressible viscous flow. Impurity profiles contours also shown both neutral oxidizing ambients, along several comparisons data or SUPREM II.

The effect of conditioning downforce during pad break-in, and its impact on the evolution surface micro-texture was investigated. Two different downforces were used to break-in pads. Pad samples extracted after certain times analyzed for their topography contact area using confocal microscopy. Results showed that pad-wafer density decreased with downforce. Break-in at higher helped in reaching faster stabilized values parameters. these parameters two downforces, however as time increased...

A novel method was developed to directly measure the substrate temperature during copper chemical mechanical planarization (CMP). Using specially designed wafer carriers, temperatures were obtained in real-time with an infrared camera. Results indicate that are higher than pad temperatures. In addition, distribution appears be closely related slurry flow beneath polishing. three-dimensional thermal model also simulate and Simulations support interpretation of experimental data.

Variations in the chemical mechanisms of copper chemical-mechanical planarization (CMP) can appear due to effect pad grooving on net flow under wafer, pad, and slurry temperature, reactants polish debris concentration. Furthermore, changes mechanical abrasion passive film might thickness friction force at pad–wafer interface, compressibility, contact area. The effective transport out interface becomes critical particularly for processes which by-products are detrimental polishing rates. By...

The impact of conditioner types and downforces during pad break-in, the resulting effects on evolution surface micro-texture was investigated. Two different conditioning discs were used with 3 possible to break-in pads. Pad samples extracted throughout process confocal microscopy analyze for their micro-topography pad-wafer contact. Results showed that all experimental cases resulted in similar trends mean summit height. More importantly, each case a height distribution. Comparing two used,...

The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished a Dow ® IC1000 TM K-groove conditioned at two different conditioning forces. coefficient friction increased slightly (by 7%) while dramatically 65%) when force from 26.7 to 44.5 N. Pad analysis results showed that contact area decreased 71%) the N, leading sharp increase local pressure and resulting significantly higher rate.