- Photonic and Optical Devices
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Silicon Nanostructures and Photoluminescence
- Advanced Photonic Communication Systems
- Semiconductor materials and devices
- Optical Wireless Communication Technologies
- Photonic Crystal and Fiber Optics
- Laser-Matter Interactions and Applications
- Thin-Film Transistor Technologies
- ZnO doping and properties
- Advanced Fiber Optic Sensors
- Nanowire Synthesis and Applications
- Solid State Laser Technologies
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Power System Optimization and Stability
- Diamond and Carbon-based Materials Research
- Silicon Carbide Semiconductor Technologies
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Quantum Dots Synthesis And Properties
National Institute of Information and Communications Technology
2023-2024
National Taiwan University
2014-2023
The University of Tokyo
2021-2023
Chang Gung University
2012-2020
Chang Gung Memorial Hospital
2015-2020
Sidney Kimmel Comprehensive Cancer Center
2015-2020
Johns Hopkins University
2015-2020
Bloomberg (United States)
2020
Cancer Research Center
2020
Sitronix Technology (Taiwan)
2020
Mechanically triturated n- and p-type Bi2Te3 nanoparticles, the nanoscale topological insulators (TIs), are employed as nonlinear saturable absorbers to passively mode-lock erbium-doped fiber lasers (EDFLs) for sub-400 fs pulse generations. A novel method is proposed enable control on self-amplitude modulation (SAM) of TI by adjusting its dopant type. The type only shifts Fermi level without changing energy bandgap, that nanoparticles have shown broadband absorption at 800 1570 nm. In...
Upon antigen recognition and co-stimulation, T lymphocytes upregulate the metabolic machinery necessary to proliferate sustain effector function. This reprogramming in cells regulates cell activation differentiation but is not just a consequence of recognition. Although such promotes function cells, regulatory employs different reprogramming. Therefore, we hypothesized that inhibition glycolysis glutamine metabolism might prevent graft rejection by inhibiting generation promoting generation....
The enhanced recombination and external quantum efficiency (EQE) of the multi-color metal-oxide-semiconductor light-emitting diodes (MOSLEDs) made on SiOx film with buried Si dots (Si-QDs) grown by plasma-enhanced chemical vapor deposition are demonstrated. By shrinking Si-QD size from 4.2 to 1.8 nm increasing RF plasma power 20 50 W, these MOSLEDs enhance maximal electroluminescent (EL) 0.1 0.7 μW. This is mainly attributed rate enlarging overlap between electron hole wave-functions. As...
A new type of power system stabiliser based on fuzzy set theory is proposed to improve the dynamic performance a multimachine system. To have good damping character istic over wide range operating conditions, speed deviation (δω) and acceleration machine are chosen as input signals that particular machine. These first characterised by linguistic variables using notations. The relation matrix, which gives relationship between inputs output, allows logic operations per formed obtain desired...
The optical nonlinearity of the nonstoichiometric silicon carbide with a variable C/Si composition ratio is studied. significantly enhanced and mechanism related to bonding structures in are elucidated.
A green <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="m1"> <mml:mrow> <mml:mn>2</mml:mn> <mml:mo>×</mml:mo> </mml:mrow> </mml:math> micro light-emitting diode ( id="m2"> <mml:mi mathvariant="normal">μ</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>LED</mml:mi> ) array with nanostructured grating patterns grown on a semipolar (20-21)-oriented gallium nitride (GaN) buffered layer (22-43)-oriented sapphire substrate is specially transistor-outline can (TO-can)...
The nonstoichiometric ITO/n-SiC/i-SiC/p-Si/Al light-emitting diodes (LEDs) with dense Si quantum dots (Si-QDs) embedded in the Si-rich <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> C xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> -based i-SiC layer are demonstrated. films buried Si-QDs grown by plasma-enhanced chemical vapor deposition varying substrate temperatures. After annealing process, average Si-QD size...
This paper is going to review the state-of-the-art of high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing structural design, mode control and related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used increase differential gain photon density in VCSEL. The oxide layers oxide-confined aperture were designed VCSEL decrease parasitic capacitance generate single (SM) maximal modulation bandwidth 30 GHz achieved with well-designed...
Background: Centrally located large hepatocellular carcinoma (HCC) is a difficult issue in surgery.These HCCs can be treated by hemi-/extended or central hepatectomies.The aim of this study was to analyze the results and hepatectomies. Methods:One hundred four patients with centrally-located tumors were retrospectively reviewed.Patients divided into group 1 (n = 41) hepatectomies, 2 63) hepatectomies.Characteristics analyzed between groups survival rates calculated. Results:Parenchyma...
The optical nonlinearity of dense Si quantum dots doped SiN<sub>x</sub>matrix enhanced by three orders magnitude larger than that stoichiometric Si<sub>3</sub>N<sub>4</sub>is demonstrated<italic>via</italic>detuning the excessive content from composition.
Abstract The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-Si x C 1−x ) buffer is demonstrated. a-Si buffers with different nonstoichiometric C/Si composition ratios are synthesized SiO 2 /Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. GaN LEDs Si exhibit EL and C-V characteristics because the extended strain induced interfacial defects. power decays when increasing content buffer. C-rich favors...
The first demonstration on the bendable substrateless GaN LED a-SiC buffer transferring to dielectric and metallic substrates.
The visible wavelength-division multiplexing (VWDM) optical wireless communication beyond 30 Gbit/s with a white-light beam mixed by red/green/violet (R/G/V) laser diodes (LDs) and yellow (Y) LED is demonstrated via quadrature amplitude modulation discrete multitone (QAM DMT). To facilitate both high-quality indoor lighting high-speed communication, the R/G/V-LD module incorporates Y-LED to provide high color rendering index (CRI) encapsulates frosted glass enlarge its divergent angle. By...
By the semipolar blue single GaN μ-LED and blended Ir(piq)2(acac) + CC-MP5 polymer thin film color converter, a high-speed white-light μ-LED-based system is built up for applications of short-distance VLC. The characteristics properties both devices are analyzed to understand requirements transmission illumination. selecting growing orient, influence QCSE reduced in this μ-LED. Meanwhile, possessing low reflection characteristic, it beneficial signal modulation. For converter with lifetime...
Finite Si atom diffusion induced size limitation of self-assembled quantum dots (Si-QDs) in silicon-rich silicon carbide (SiC) is demonstrated. After annealing, the Si-QDs with a 3 ± 1 nm are precipitated matrix SiC0.51 deposited by low-temperature plasma-enhanced chemical vapor deposition Argon-diluted silane and methane mixture. The amorphous-Si dependent Raman scattering peak at ∼470 cm−1 narrowing increasing temperature, Si-CH3 rocking-mode absorption line shifted dehydrogenation after...
By using the Lu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">12</sub> :Ce <sup xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> /CaAlSiN :Eu xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> phosphor codoped fluorescent glass as a in front of an InGaN laser diode (LD), novel white-lighting and visible light communication (VLC)...
Nonstoichiometric silicon carbide (SiC) bus/ring waveguide resonator based all-optical data-format follower and inverter is demonstrated to perform ultrafast dual-functional wavelength conversion. The buried Si quantum dots (Si-QDs) with strong confinement effect effectively result in a significant change on the nonlinear refractive index of 3.14 × 10–13 cm2/W, which induces red-shift 0.07 nm resonant comb nonstoichiometric SiC ring resonator. By injecting 12 Gbit/s optical pulsed...
Murine full-thickness skin transplantation is a well-established in vivo model to study alloimmune response and graft rejection. Despite its limited application humans, mice has been widely employed for research. The procedure easy learn perform, it does not require delicate microsurgical techniques nor extensive training. Moreover, rejection this occurs very reproducible immunological reaction easily monitored by direct inspection palpation. In addition, secondary with donor-matched or...
Phosphor thickness and R/B power were analyzed to optimize the cold-white-light CRI 80.4 white-light VLC 10.4 Gbps.
Abstract By color-converting the violet laser diode (VLD) with a cadmium selenide and zinc sulfide (CdSe/ZnS) core-shell-quantum dot (QD) doped polydimethylsiloxane (PDMS) film, VLD + CdSe/ZnS core-shell-QD transferred white-light improved color rendering index (CRI) is demonstrated for high-speed indoor visible lighting communication. To facilitate hue saturation value (HSV) of white-lighting module, dual-sized core-shell-QDs two luminescent wavelengths centered at 515 630 nm are into PDMS....
This paper emphasizes on overviewing the developing progress of state-of-the-art carbon nanomaterial-based saturable absorbers for passively mode-locked fiber lasers, including nanotube (CNT), graphene, graphite and other nanomaterials. With reviewing performances these proposed candidates, characteristic parameters required initiating stabilizing passive lasers are summarized comparison discussion. At first, basic characteristics such as saturation intensity self-amplitude-modulation (SAM)...
A silicon (Si) Mach-Zehnder modulator (MZM) is demonstrated for 10-km SMF Link at C-band (1550 nm), which allows the pre-emphasized 4-level pulse amplitude modulation (PAM-4) data transmission 50 GBaud (100 Gbit/s) per channel. By employing pre-emphasis to PAM-4 over different links, channel dispersion-induced power fading can be compensated. The with improved spectral usage efficiency in limited bandwidth employed encode Si MZM, and maximal capacities of back-to-back (BtB), 2-km SMF, 26 DSF...