A5004946963- Magnetic properties of thin films
- Magnetism in coordination complexes
- ZnO doping and properties
- Magnetic Properties and Applications
- Advanced NMR Techniques and Applications
- Magnetic Field Sensors Techniques
- Lanthanide and Transition Metal Complexes
- Atomic and Molecular Physics
- Electron Spin Resonance Studies
- X-ray Diffraction in Crystallography
- Ion-surface interactions and analysis
- Crystallography and Radiation Phenomena
- Magnetic Properties of Alloys
- Free Radicals and Antioxidants
- Electron and X-Ray Spectroscopy Techniques
- Diamond and Carbon-based Materials Research
- Thermal and Kinetic Analysis
- X-ray Spectroscopy and Fluorescence Analysis
- Theoretical and Computational Physics
- Mass Spectrometry Techniques and Applications
- Electronic and Structural Properties of Oxides
- Advanced MRI Techniques and Applications
- NMR spectroscopy and applications
Osaka University
1993-2017
Kyushu University
2000
Abstract Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. We find one potentially unique situation a metal–dielectric interface which the field is atomically inhomogeneous because of strong electrostatic screening effect metals. Such enable us to access quadrupoles shell. Here we show, by synchrotron X-ray absorption spectroscopy, induction magnetic moments platinum monatomic...
In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and circular dichroism spectroscopy. The showed enhanced perpendicular under external negative voltage, which induced charge depletion at interface. Despite application of voltages opposite polarity, no trace chemical reaction such as a redox attributed to O2− migration detected spectra Fe. VCMA reported Fe|MgO-based...
We found that CoFeB|MgO|Ta tunnel junctions exhibit anisotropic magnetoresistance (TAMR) at room temperature. The positive with the application of a magnetic field normal to film plane. dependencies on applied angle and MgO thickness reveal originates from TAMR, caused by spin polarization spin-orbit interaction CoFeB|MgO interface. also TAMR can be used detect ferromagnetic resonance in CoFeB. This detection method could useful for characterization nanomagnets are free spin-transfer effect...