A5050762849- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Organic Electronics and Photovoltaics
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Electronic and Structural Properties of Oxides
- Organic Light-Emitting Diodes Research
- Analytical Chemistry and Sensors
- Silicon and Solar Cell Technologies
- Neuroscience and Neural Engineering
- Perovskite Materials and Applications
- Radiation Effects in Electronics
- Force Microscopy Techniques and Applications
- Advanced MEMS and NEMS Technologies
- TiO2 Photocatalysis and Solar Cells
- Ferroelectric and Negative Capacitance Devices
- Nanowire Synthesis and Applications
- Photovoltaic System Optimization Techniques
- Electrostatic Discharge in Electronics
- Ion-surface interactions and analysis
- ZnO doping and properties
- solar cell performance optimization
- GaN-based semiconductor devices and materials
University of Padua
2014-2024
University of Bologna
2016
Politecnico di Milano
2015
Micron (Italy)
2015
TU Wien
2015
Istituto Nazionale di Fisica Nucleare, Sezione di Padova
2002-2008
Istituto Nazionale di Fisica Nucleare
2005-2007
Istituto Nazionale per la Fisica della Materia
2002-2005
Costs and toxicity concerns are at the center of a heated debate regarding implementation perovskite solar cells (PSCs) into commercial products. The first bottleneck could be overcome by eliminating top metal electrode (generally gold) underlying hole transporting material substituting both with one single thick layer conductive carbon, as in so-called carbon-based PSCs (C-PSCs). second issue, related to presence lead, can tackled resorting other structures based on less toxic metallic...
Low-field leakage current has been measured in thin oxides after exposure to ionising radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunnelling process mediated by neutral traps the oxide, with energy loss of about 1 eV. The trap distribution is influenced oxide field applied during irradiation, thus indicating that precursors defects are charged, likely associated trapped holes. maximum found under zero-field condition and it rapidly decreases...
Slow trapping phenomenon in AlGaN/GaN HEMTs has been extensively analyzed and described this paper. Thanks to a detailed investigation, based on combined pulsed transient investigation of the current/voltage characteristics (carried out over an 8-decade time scale), we report description properties trap levels located gate–drain surface, region under gate HEMTs. More specifically, following, relevant results have identified: (i) presence surface states may determine significant current...
Abstract Supercapacitors and transistors are two key devices for future electronics that must combine portability, high performance, easy scalability, etc. Graphene‐related materials (GRMs) frequently chosen as active these applications given their unique physical properties tunable via chemical functionalization. Up to date, among GRMs, only reduced graphene oxide (rGO) showed sufficient versatility processability in mild media, rendering it suitable integration types of devices. Here, a...
Abstract The study of deep-level defects in semiconductors has always played a strategic role the development electronic and optoelectronic devices. Deep levels have strong impact on many device properties, including efficiency, stability, reliability, because they can drive several physical processes. Despite advancements crystal growth, wide- ultrawide-bandgap (such as gallium nitride oxide) are still strongly affected by formation that, general, act carrier traps or...
This paper presents an extensive study of how a solar cell with low shunt resistance can affect the performance and reliability panel. The analysis is based on both simulations experimental tests provides following results: 1) significantly reduces efficiency panel; 2) this particularly pronounced if shunted partially shaded: in case, acts as load for entire 3) these conditions, degrade: fact, small-size paths are crossed by high current density, generated other cells panel, thus reaching...
A fully customable high-voltage pulsed system capable of double-pulsed I–V and time-resolved drain-current transient characterization from 1µs- to 100s-range is presented. The allows a comprehensive the charge-trapping phenomena affecting dynamic performances GaN-based power HEMTs under operational biases. We discuss main issues pulsed- transient-characterization, propose solutions for reliable measurements data acquisition. Moreover, we demonstrate effectiveness through description...
We have investigated how ultra-thin gate oxides subjected to heavy ion irradiation react a subsequent electrical stress performed at low voltages. Even in devices exhibiting small (or even no) increase of the current after irradiation, time-to-breakdown is substantially reduced comparison with unirradiated samples due onset soft or hard breakdown, contrast previous results found on thicker oxides. In fact, we demonstrated that radiation damage acts as seed for further oxide degradation by...
In this work, we have focused our attention on MOSFETs, which are the real basic elements of all CMOS applications. We studied immediate and latent effects produced by heavy ion irradiation MOSFETs with ultrathin gate oxide, even after electrical stresses subsequent to irradiation. found that a single can generate physically damaged region (PDR) localized in Si-SiO/sub 2/ interface, may hamper surface channel formation. order PDR hit must be close enough MOSFET borders, i.e., correspondence...
The rise of graphene as an innovative electronic material promoted the study and development new 2-D materials. Among them, reduced oxide (rGO) appears like easy cost-effective solution for fabrication thin-film transistors (TFTs). To understand limits possible application fields rGO-based TFTs, a proper estimation device parameters is extreme importance. In this work, liquid-gated ambipolar rGO-TFTs are characterized description their working principle given. Particular attention paid...
We investigate ferroelectric random access memories subjected to X-ray and proton irradiations. address the radiation damage dependence on irradiation temperature, its stability during annealing cycling, effects of supply voltage packaging. The strongly depends temperature. Immediately after or irradiation, we detect only stuck bits without data corruption, at least doses up 9 Mrad(Si) room anneals in time as long several weeks, recovery rate is accelerated by either electrical cycling high...
We subjected III-V InGaAs MOSFETs to positive and negative gate stresses. The stress polarity strongly affects the degradation kinetics of current. Positive features a remarkable increase current, net trapped charge, large telegraphic noise, soft breakdown, before occurrence final catastrophic breakdown. Negative only charge until hard
Threshold voltage instabilities observed in GaN HEMTs designed for power switching applications when submitted to either DC or pulsed testing are here presented and interpreted. Main results can be summarized as follows: i) two acceptor trap levels, characterized by well distinct time constants, present the UID channel C-doped buffer respectively behave electron hole traps respectively; ii) trapped charge is modulated high biasing of gate drain terminals; iii) empty, induce a negative...
We developed an improved model to fit the photocurrent density versus voltage in organic solar cells. The has been validated by fitting data from P3HT:PCBM Our quantitatively accounts for band bending near electrodes caused charge accumulation active layer. explains position of built-in and zero-field voltage, value internal electric field, impact electrode materials, appearance multiple inflections. In addition, can be used monitor cell condition during accelerated lifetests.
We have investigated new aspects of the gate leakage current due to radiation-induced soft breakdown (RSB) thin oxides subjected heavy-ion irradiation. Temperature and noise characteristics RSB on MOS capacitors with 3- 4- nm been experimentally investigated. developed an empirical law describe quantitatively temperature dependence current. A small activation energy has found by using Arrhenius relation, in agreement tunneling conduction mechanism. The variation at high only estimated, as...
Gate-oxide soft breakdown (SB) can have a severe impact on MOSFET performance even when not producing any large increase of the gate leakage current. The SB effect characteristics strongly depends channel width W: drain saturation current and transconductance dramatically drop in transistors with small W after SB. As increases, fades. collapse is due to formation an oxide defective region around spot, whose area much larger than conductive path. Similar degradation be observed heavy ion...