Low-field leakage current has been measured in thin oxides after exposure to ionising radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunnelling process mediated by neutral traps the oxide, with energy loss of about 1 eV. The trap distribution is influenced oxide field applied during irradiation, thus indicating that precursors defects are charged, likely associated trapped holes. maximum found under zero-field condition and it rapidly decreases...

MOS capacitors with a 4.4 nm thick gate oxide have been exposed to /spl gamma/ radiation from Co/sup 60/ source. As result, we measured stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar the usual Stress Currents (SILC) observed after electrical stresses of devices. We verified that these two currents share same dependence on field, and RILC contribution can be normalized an equivalent injected...

Substantial literature is devoted to understanding dispersal evolution, but we lack theory on how evolves when populations inhabit currents. Such required for connectivity in freshwater and marine environments; moreover, many animals, fungi plants rely wind‐based dispersal, the effects of currents evolution these organisms unknown. We develop an individual‐based model probability along a linear environment with unidirectional current. Even slight current substantially reduces overall...

Flash memories are the most important among modern nonvolatile memory technologies. We showing new results on threshold voltage shifts in arrays after /sup 60/Co irradiation. A (relatively) high total dose, exceeding 100 krad (SiO/sub 2/), is needed to induce errors array, but all negligible even at lower doses. These can be accurately described by using a model which considers charges generated irradiation oxides surrounding floating gate. also that cycling (endurance) and ionizing dose...

A novel reliability extrapolation model is proposed for the stress-induced-leakage current (SILC) in very thin oxides. This relies on assessment of power laws SILC degradation kinetics as a function both injection dose and stress density. The rate found to be almost independent measuring bias polarity. simple analytical expressions enable intensity predicted at nominal operating conditions constant voltage stress.

Negative-bias temperature instability (NBTI) is a major challenge for modern integrated circuits and may represent key factor the success of technology. In this paper, NBTI approached from process point view, providing general picture manufacturing steps that affect performance. It found several be optimized to reduce susceptibility p-type MOSFETs. The choice cure approach depends on device application, technology, also equipment.

In this paper, strategics to cope with plasma charging damage in design and layout phases are discussed. A semi-empirical model is addressed first. With model, a designer able predict the induced yield loss of circuit, if antenna ratio (AR) distribution circuit available. Then novel first order self-balancing interconnect proposed reduce damage. Moreover, temperature effect on protection diode discussed strategic scheme for proposed. addition these general methods, set rules given protect...

The few fast bits, resulting from stress induced leakage current, that are found in a memory array limit lifetime of an entire device. Instead classical temperature accelerated tests, 'simple' gate represents therefore the correct method to study advanced non-volatile retention behavior. In this paper model is proposed predict under use conditions based on measurements. considers statistical approach, order overcome erratic behavior bits. It enables predicting products as function size and...

The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. simulation shows that the ambient temperature, especially during plasma deposition process, enormously enhances efficacy in protecting thin oxide. compared by and experiment. Based on our discoveries, a strategic scheme plasma-process induced damage (PPID) is proposed.

It is shown that photoconduction triggered in silicon nitride films when they are exposed to plasma. As a consequence of the increased conductivity, can act as antennas, being able collect charges from unstable plasmas and inject them into gate oxide, thus causing charging damage. The importance this phenomenon for deep submicron microelectronic manufacturing discussed.

A new fast wafer level SILC monitoring method, based on parallel floating gate cells, is reported here. The measurement straightforward, and the stress not time consuming. It consists of bi-directional FN tunneling (to degrade tunnel oxide) a negative voltage reveal SILC). An empirical parameter has been defined as lowest cell V/sub t/ in NVM array. This method implemented part end-of-line measurements Philips embedded flash processes, proven to be very effective powerful experimental split...

In this work we have investigated how gamma irradiation affects the tunneling conduction mechanism of a 20 nm thick oxide in MOS capacitors. The radiation induced positive charge is rapidly compensated by injected electrons, and does not impact gate current under injection after first current-voltage measurement. Only transient stress leakage at low bias observed. Instead, negative has been observed near polysilicon gate, which enhances voltage needed for Fowler-Nordheim bias. No time decay...

PMOSFET parametric degradation during negative-bias high temperature aging can depend on many steps of the manufacturing process flow. The effect some NBTI is discussed with a phenomenological approach. In particular, we report case in which plasma induced charging reduces instability.