A5034832852- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Luminescence Properties of Advanced Materials
- Diamond and Carbon-based Materials Research
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Surface Roughness and Optical Measurements
- Luminescence and Fluorescent Materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Theoretical and Computational Physics
- Quantum Dots Synthesis And Properties
- Antenna Design and Analysis
- Perovskite Materials and Applications
- Graphene research and applications
- Energy Harvesting in Wireless Networks
- Nuclear Physics and Applications
- Advanced Photocatalysis Techniques
- Ferroelectric and Negative Capacitance Devices
- Adhesion, Friction, and Surface Interactions
- Electronic and Structural Properties of Oxides
- Molecular Junctions and Nanostructures
- Copper-based nanomaterials and applications
- Magnetic properties of thin films
- Microwave Engineering and Waveguides
Devi Ahilya Vishwavidyalaya
2018-2024
Istituto Officina dei Materiali
2012-2024
University of Allahabad
2010-2023
Veer Bahadur Singh Purvanchal University
2023
Central University of Punjab
2022
Bhabha Atomic Research Center Hospital
2022
AREA Science Park
2009-2014
Vitenparken
2014
National Institute of Technology Tiruchirappalli
2010-2011
Lead‐free metal halide perovskite materials have received significant attention for optoelectronic devices due to their excellent properties and ecofriendly composition. Utilizing the inverse temperature crystallization technique, Cs 3 Bi 2 I 9 bismuth‐based ternary single crystals measuring ≈5 mm are successfully grown. This study investigates dielectric relaxation conduction mechanism using temperature‐dependent impedance spectroscopy correlated with modulus across a frequency range (10...
Highly transparent, conducting, highly oriented, and almost single phase ZnO films have been deposited by simple e-beam evaporation method, the deposition parameters were optimized. The prepared (a) of at different substrate temperatures (b) room temperature subsequent annealing in oxygen ambient temperatures. characterizations film performed optical absorption spectroscopy (UV-visible), Fourier transform infrared spectroscopy, resistivity measurement, transmission electron microscopy (TEM),...
Fractal and multifractal characteristics of self-affine surfaces BaF2 thin films, deposited on crystalline Si ⟨1 1 1⟩ substrate at room temperature, were studied. Self-affine prepared by irradiation 120 MeV Ag(9+) ions which modified the surface morphology nanometer scale. The virgin film those irradiated with different ion fluences are characterized atomic force microscopy technique. roughness (interface width) shows monotonic decrease fluences, while other parameters, such as lateral...
Fractal characterization of surface morphology can be useful as a tool for tailoring the wetting properties solid surfaces. In this work, rippled surfaces Si (100) are grown using 200 keV Ar+ ion beam irradiation at different doses. Relationship between fractal and these explored. The height-height correlation function extracted from atomic force microscopic images, demonstrates an increase in roughness exponent with A steep variation contact angle values is found low dimensions. Roughness...
Spray pyrolyzed ZnO films prepared using solution containing ethanol and water (volume ratio 1:1), exhibited optical transmission of 85% in the visible range electrical resistivity 78Ωcm. These samples were irradiated 120MeV Au ion beam then characterized absorption transmission, x-ray diffraction (XRD), measurements, photoelectron spectroscopy (XPS), photoluminescence studies. It appears that irradiation does not affect edge while transmittance was slightly reduced. But intensities peaks...
Yttrium doped hafnia (Y-doped HfO2) thin film based devices have recently shown their potential for advanced nanoelectronics applications. Here, we report the fabrication of device-grade Hf(1−x)YxO2 (x = 0, 0.10, and 0.20) films on both Si(100) platinized silicon substrates using an optimized Nd:YAG pulsed laser deposition system, wherein detailed structural compositional characterizations were carried out to establish a structural-dielectric property correlation. The capacitance-frequency...
Electronic sputtering in polycrystalline LiF thin film by 120MeV Ag25+ is investigated. The sputter yields of Li and F for the different thicknesses (10–265nm) films are measured with online elastic recoil detection analysis technique. A reduction yield, from ∼2.3×106 to 2.2×104 atoms/ion, observed increase thickness. trend experimental results can be explained terms size effect following inelastic thermal spike model. confinement energy having smaller grains lower thickness higher...
The prevalence of intermetallic charge transfer is a marvel for fine-tuning the electronic structure active centers in electrocatalysts. Although Pauling electronegativity primary deciding factor direction transfer, we report an unorthodox intra-lattice 'inverse' from Mo to Ni two systems, Ni73Mo alloy electrodeposited on Cu nanowires and NiMo-hydroxide (Ni : = 5 1) foam. inverse deciphered by X-ray absorption fine studies photoelectron spectroscopy has been understood Bader projected...
Thermally deposited 200 nm polycrystalline films of lithium fluoride (LiF) grown on glass substrates were irradiated with 150 MeV Ag ions at various fluences between 1 × 1011 and 2 1013 cm−2. The irradiation induced structural optical modifications studied using glancing angle x-ray diffraction (GAXRD), absorption photoluminescence (PL) spectroscopy. GAXRD results show that the are average grain size (estimated from widths peak Scherrer formula) decreases systematically 46.3 for pristine...
The red luminescence of ZnS:Mn<sup>2+</sup> nanocrystals at ∼612 nm and the broad spectrum antibacterial activity biotin capped nanocrystals.