A5002858197- Ion-surface interactions and analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Diamond and Carbon-based Materials Research
- Semiconductor materials and devices
- Luminescence Properties of Advanced Materials
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Advanced Photocatalysis Techniques
- Luminescence and Fluorescent Materials
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Perovskite Materials and Applications
- Polymer Nanocomposite Synthesis and Irradiation
- Semiconductor Quantum Structures and Devices
- Selenium in Biological Systems
- Advanced Semiconductor Detectors and Materials
- Surface Roughness and Optical Measurements
- Advanced Nanomaterials in Catalysis
- Theoretical and Computational Physics
- Plant Reproductive Biology
- Nuclear materials and radiation effects
- Fullerene Chemistry and Applications
- Occupational exposure and asthma
- Medical and Biological Ozone Research
- Gas Sensing Nanomaterials and Sensors
Indian Agricultural Research Institute
2023
ICMR-National Institute of Virology
2023
Shiv Nadar University
2023
Indian Institute of Technology Roorkee
2023
University of Allahabad
2012-2022
University of Delhi
2014
Istituto Officina dei Materiali
2010
AREA Science Park
2009
Inter-University Accelerator Centre
2006
Genes in the Armadillo (ARM)-repeat superfamily encode proteins with a range of developmental and physiological processes unicellular multicellular eukaryotes. These 42 amino acid, long tandem repeat-containing have been abundantly recognized many plant species. Previous studies confirmed that constitute multigene family Arabidopsis. In this study, we performed computational analysis rice genome (Oryza sativa L. subsp. japonica), identified 158 genes superfamily. Phylogenetic study...
Fractal characterization of surface morphology can be useful as a tool for tailoring the wetting properties solid surfaces. In this work, rippled surfaces Si (100) are grown using 200 keV Ar+ ion beam irradiation at different doses. Relationship between fractal and these explored. The height-height correlation function extracted from atomic force microscopic images, demonstrates an increase in roughness exponent with A steep variation contact angle values is found low dimensions. Roughness...
Studies on interaction of graphene with radiation are important because nanolithographic processes in graphene-based electronic devices and for space applications. Since the properties highly sensitive to defects number layers sample, it is desirable develop tools engineer these two parameters. We report swift heavy ion (SHI) irradiation-induced annealing purification effects films, similar that observed our studies fullerenes carbon nanotubes (CNTs). Raman after irradiation 100-MeV Ag ions...
Thermally deposited 200 nm polycrystalline films of lithium fluoride (LiF) grown on glass substrates were irradiated with 150 MeV Ag ions at various fluences between 1 × 1011 and 2 1013 cm−2. The irradiation induced structural optical modifications studied using glancing angle x-ray diffraction (GAXRD), absorption photoluminescence (PL) spectroscopy. GAXRD results show that the are average grain size (estimated from widths peak Scherrer formula) decreases systematically 46.3 for pristine...
Variously synthesized and fabricated Bi
We present an experimental study of the evolution InAs/GaAs quantum dots partially capped with GaAs, as annealing process transforms them first into rings and later holes penetrating whole cap layer. Shape, composition, optical emission were monitored a function time by means atomic force microscopy, x-ray photoemission photoluminescence, respectively. Our results show progressive dissolution original dot, outdiffused material forming second wetting layer on planar region surrounding dot....
200 nm thick SiO2 layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples characterized time-of-flight secondary ion mass spectrometry and Rutherford backscattering to obtain depth profiles concentration of ions. annealed 950 °C for 30 min. Crystalline quality pristine, as-implanted, was investigated using Raman scattering measurements the results compared. structure as-implanted embedded into matrix studied x-ray diffraction. No...
Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180keV Co ions at three different fluences. As-implanted samples characterized secondary ion mass spectrometry and Rutherford backscattering to obtain the depth profiles maximum concentrations. annealed applying two techniques: rapid thermal annealing by swift heavy irradiation. Rapid was done temperatures: 1150°C for 20s 700°C 5min. 200MeV Ag fluences used Crystalline structure of pristine, as-implanted,...